Eugene Technology Co., Ltd.

Ho Min Choi

Seong Jin Park

Woo Duck Jung

Wan Suk Oh

Seung Woo Shin

Cha Young Yoo

Eun Ho Kim

Seung-Woo Shin

Sung-Kil Cho

Doo Yeol Ryu

Koon Woo Lee

Hui Sik Kim

Hyuk Lyong Gwon

Kang-Wook Lee

Ki Ho Kim

Provided is a method for forming an epitaxial layer at a low temperature. The method for forming the epitaxial layer includes transferring a substrate into an epitaxial chamber and performing an epitaxial process on the substrate to form an epitaxial layer on the substrate. The epitaxial process includes heating the substrate at a temperature of about 700&#xb0; C. or less and injecting a silicon gas into the epitaxial chamber in a state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a first epitaxial layer, stopping the injection of the silicon gas and injecting a purge gas into the epitaxial chamber to perform first purge inside the epitaxial chamber, heating the substrate at a temperature of about 700&#xb0; C. or less and injecting the silicon gas into the epitaxial chamber in the state in which the inside of the epitaxial chamber is adjusted to a pressure of about 300 Torr or less to form a second epitaxial layer, and stopping the injection of the silicon gas and injecting the purge gas into the epitaxial chamber to perform second purge inside the epitaxial chamber.

Method for forming epitaxial layer at low temperature

Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Method for forming polysilicon film

Growing community of inventors

Yongin-si, South Korea

Ho Min Choi