Samsung Electronics Co., Ltd.

Ho-In Ryu

Bong-Soo Kim

Hyeong-sun Hong

Soo-Ho Shin

Soo-ho Shin

Provided are semiconductor integrated circuit (IC) devices including gate patterns having a step difference therebetween and a connection line interposed between the gate patterns. The semiconductor IC device includes a semiconductor substrate including a peripheral active region, a cell active region, and a device isolation layer. Cell gate patterns are disposed on the cell active region and the device isolation layer. A peripheral gate pattern is disposed on the peripheral active region. A cell electrical node is disposed on the cell active region adjacent to the cell gate patterns. Peripheral electrical nodes are disposed on the peripheral active region adjacent to the peripheral gate pattern. Connection lines are disposed on the cell gate patterns disposed on the device isolation layer. The connection lines are connected between the cell gate patterns and the peripheral gate pattern.

Semiconductor integrated circuit devices including gates having connection lines thereon

Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same

Provided are semiconductor integrated circuit (IC) devices having an upper pattern aligned with a lower pattern molded by a semiconductor substrate and methods of forming the same. In the semiconductor IC devices, the lower pattern contacts the upper pattern using an active region and/or an isolation layer. The methods include preparing a semiconductor substrate having an active region. A lower pattern is formed on the active region. The lower pattern is surrounded by the active region and protrudes from a top surface of the active region. An upper pattern is disposed on the lower pattern. The upper pattern contacts the lower pattern.

Semiconductor integrated circuit devices having upper pattern aligned with lower pattern molded by semiconductor substrate and methods of forming the same

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Gyeonggi-do, South Korea

Ho-In Ryu