Samsung Electronics Co., Ltd.

Ho-ik Hwang

Soo-cheol Lee

Tae-Jung Lee

Sang-bae Yi

Geun-sook Park

Byeong-cheol Hwang

Soo-Hyun Lee

Joon-ho Won

A multimedia apparatus and a method for controlling operations thereof are provided. The multimedia apparatus includes an input unit for receiving a selection signal, a sensing unit for sensing disposition of the multimedia apparatus, and a controller for, if the selection signal is input, performing different operations depending on the disposition. Accordingly, various operations of the multimedia apparatus may be controlled by simple manipulation.

Multimedia device and method for controlling operation thereof

An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.

EEPROM devices and methods of operating and fabricating the same

A semiconductor device includes a pad electrode layer and an align mark layer, formed on the semiconductor substrate. A passivation layer is formed on the semiconductor substrate and exposes at least a portion of the top of the pad electrode layer and at least a portion of the top of the align mark layer. A light-transmitting protecting layer covers at least a portion of the passivation layer, exposes the top portion of the pad electrode layer exposed from the passivation layer, and covers the portion of the align mark layer exposed from the passivation layer.

Semiconductor device having align mark layer and method of fabricating the same

A capacitor structure includes a device isolation layer pattern formed at a predetermined region of a semiconductor substrate to define an active region; an upper electrode disposed over an upper center of the active region to expose an edge of the active region; a lower electrode region formed in the active region under the upper electrode; and a lightly doped region overlapping with an outer edge of the lower electrode region. In this manner, the resulting breakdown voltage of the device can be increased.

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Seoul, South Korea

Ho-ik Hwang