Skhynix Inc.

Hynix Semiconductor Inc.

Ho Don Jung

Sang Ho Lee

Jun Hyun Chun

Jung Hwan Ji

An input/output (I/O) circuit may be provided. The I/O circuit may include an input control circuit and an output control circuit. The input control circuit may be configured to apply a stress to a transmission path based on an input signal while in a test mode and buffer the input signal using a drivability changed by the stress applied to the transmission path to generate first and second transmission signals while in a normal mode after the test mode. The output control circuit may be configured to drive and output an output signal according to the first and second transmission signals based on a test mode signal.

Input and output circuits and integrated circuits using the same

A semiconductor apparatus may include a unit memory region, a first column main decoder, a second column main decoder, and a control circuit. The unit memory region may include a plurality of sub-memory regions. The first and second column main decoders may be configured to receive and decode a column pre-decoding signal and configured to generate a respective column select signal for controlling a column access of a respective first and second half of the plurality of sub-memory regions. The control circuit may be configured to provide the column pre-decoding signal to the first or second column main decoders based on their proximities to a sub-memory region to be enabled among the plurality of sub-memory regions.

Semiconductor apparatus

A degradation detection circuit may include a degradation unit including multiple delay elements driven by a high voltage for degradation. The high voltage for degradation value may be higher than an operation voltage. The degradation unit may be configured to provide a first delayed signal after passing a test signal through the degradation unit, wherein the test signal retains a pulse for a preset time. The degradation detection circuit may include a reference unit including a plurality of delay elements driven by the operation voltage, and configured to provide a second delayed signal after passing the test signal through the reference unit, a delay setting unit configured to provide a third delayed signal by selectively adding delay elements with respect to the second delayed signal, and a delay checking logic configured to detect a delay of the test signal by comparing the first delayed signal and the third delayed signal.

Degradation detection circuit and degradation adjustment apparatus including the same

A semiconductor device may include a driving control signal generation circuit configured to generate a driving control signal by determining whether a corresponding operation is a gapless read operation, according to a read strobe signal. The semiconductor device may also include a power driving circuit configured to drive a supply voltage to a power supply voltage in response to the driving control signal, and a read control signal generation circuit configured to generate a read control signal for controlling a read operation from the read strobe signal in response to the supply voltage.

Semiconductor device

The semiconductor device includes a comparator and a data output unit. The comparator compares a phase of a first pulse signal generated in a first memory region with a phase of a second pulse signal generated in a second memory region and responsively generates a detection signal. The data output unit outputs first data received from the first memory region as output data in synchronization with a first output strobe signal generated by defining a pulse width of a first strobe signal in response to the detection signal and outputs second data received from the second memory region as the output data in synchronization with a second output strobe signal generated by defining a pulse width of a second strobe signal in response to the detection signal.

Semiconductor devices

A semiconductor device includes a monitor voltage transfer unit and a voltage generating unit. The monitor voltage transfer unit selects one of a plurality of internal voltages including a cell plate voltage in accordance with a test mode to output it to a voltage monitor pad or outputs an external voltage supplied from the voltage monitor pad as a first pre cell plate voltage. The voltage generating unit generates the cell plate voltage using any one of the first pre cell plate voltage and a second pre cell plate voltage generated within itself in accordance with the test mode. The semiconductor device can generate a pre cell plate voltage at the desired level.

Semiconductor device and cell plate voltage generating apparatus thereof

A semiconductor device is disclosed which can perform a stable data inputting operation by overdriving a terminal supplying an internal voltage used as a drive voltage for a write driver such that the internal voltage is maintained in a predetermined range irrespective of a continuous write operation. The semiconductor device includes an internal voltage generator which generates an internal voltage corresponding to a predetermined reference voltage, and outputs the generated internal voltage to an internal voltage supply terminal, an overdriver which overdrives the internal voltage supply terminal for a predetermined period of time in response to an enable state of a control signal, the control signal being enabled in a write operation, and a write driver which is enabled in response to the control signal, to drive data transferred via a global data bus line using a voltage supplied from the internal voltage supply terminal, and to output the driven data to a local data bus line.

Disclosed herein is a multiplexing circuit for decreasing the output delay time of an output signal. The multiplexing circuit includes multiplexing units and a multiplexing output unit. Each multiplexing unit is initialized in response to an initialization signal, and outputs an input signal as a selection output signal in response to a selection control signal. The multiplexing output unit performs a logic operation on selection output signals received from the multiplexing units and outputs a multiplexing output signal based on the results of this operation. Preferably, the initialization signal is shared by two of the multiplexing units, and the initialization signal which is input to one of the two multiplexing units is the selection control signal which in input to the other of the two multiplexing units.

Multiplexing circuit for decreasing output delay time of output signal

Provided is a test mode circuit of a semiconductor device comprising: a test mode control unit for generating a test mode control signal which is decoded in response to a plurality of address codes corresponding to kinds of test modes, respectively; a multi-level generating unit for generating multi levels; a multi-level transfer unit for loading the multi levels on one multi-level test mode line in response to a control signal from the test mode control unit; and a multi-level identifying unit for identifying the multi levels to be inputted from the multi-level transfer unit, to supply a generated test signal to a test mode utilizing circuit.

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Seoul, South Korea

Ho Don Jung