Samsung Electronics Co., Ltd.

Ho-chul Ji

Keun Yeong Cho

Keun-yeong Cho

Hyunil Byun

Jung-hye Kim

Jinyoung Kim

Min Jung Jang

Dong-jae Shin

In-sung Joe

Doowon Kwon

Kwang-hyun Lee

Kwansik Cho

Seokjin Kwon

Kwan Sik Cho

Jameyung Kim

Hae Sung Jung

Seung Kuk Kang

Mangeun Cho

In Ho Ro

Sungki Min

An image sensor includes a substrate having first and second surfaces and first and second regions. Unit pixels including photoelectric conversion layers are arranged inside the first region. A pixel separation pattern extends from the first surface to the second surface in the first region, separates each of the unit pixels, and includes a pixel separation spacer film and a pixel separation filling film. A dummy pixel separation pattern extends from the first surface to the second surface in the second region, and includes a dummy pixel separation filling film. A wiring structure disposed on the second surface includes an inter-wiring insulating film and a first wiring. A first contact directly connects the dummy pixel separation filling film and connects the dummy pixel separation filling film to the first wiring. A height of the pixel separation filling film is greater than a height of the dummy pixel separation filling film.

Image sensor including a separation structure

An integrated circuit (IC) device includes an optical IC substrate, a local trench inside the optical IC substrate, and a photoelectronic element including a photoelectric conversion layer buried inside the local trench. The photoelectric conversion layer is buried inside the local trench in the optical IC substrate to form the photoelectronic element. Thus, the IC device may inhibit warpage of the optical IC substrate.

Integrated circuit device including photoelectronic element

A photonic integrated circuit device includes a semiconductor substrate (e.g., wafer) having a chip region therein, which is bounded on at least one side thereof by a scribe line. The chip region includes an optical transmitter, an optical receiver and a test optical waveguide. This test optical waveguide is coupled to the optical transmitter and the optical receiver and overlaps the scribe line. During a substrate dicing operation, a portion of the test optical waveguide overlapping the scribe line is removed.

Photonic integrated circuit devices and methods of forming same

A photodetector structure includes a substrate including a semiconductor film, a light absorption layer which is in contact with the semiconductor film and includes germanium (Ge), on the substrate, a first coating layer which wraps at least a part of a side surface of the light absorption layer, on the substrate, and an optical waveguide which is in contact with the light absorption layer and includes silicon nitride (SiN), on the first coating layer, wherein a lower surface of the optical waveguide is higher than a lower surface of the light absorption layer.

Photodetector structure

An image sensor including a semiconductor substrate having a first surface and a second surface, and a pixel region having a photoelectric conversion region; a first conductive pattern in a first trench defining the pixel region and extending from the first surface toward the second surface; a second conductive pattern in a second trench shallower than the first trench and defined between a plurality of active patterns on the first surface of the pixel region; a transfer transistor and a plurality of logic transistors on the active patterns; and a conductive line on the second surface and electrically connected to the first conductive pattern.

Image sensor

Optical integrated circuits are provided. An optical integrated circuit includes a substrate including a single crystalline semiconductor material. The optical integrated circuit includes an insulation region in a trench in the substrate. The optical integrated circuit includes a first core on the insulation region. The first core includes the single crystalline semiconductor material. Moreover, the optical integrated circuit includes a second core that is spaced apart from the first core. The second core includes a material having a refractive index that is lower than that of the first core.

Optical integrated circuits

An optical integrated circuit (IC) package includes an optical IC including an optical IC substrate, an optical IC including an optical IC substrate, an electrical integrated circuit device (EICD) on the optical IC substrate, at least one optical device spaced apart from the EICD on the optical IC substrate, an optical interface on a first side of the optical IC substrate, an electrical interface located on a second side of the optical IC substrate, and an encapsulation member configured to encapsulate the optical IC, the EICD, the at least one optical device, the optical interface, and the electrical interface.

Optical integrated circuit package

A photonic device is provided. The photonic device includes: a semiconductor layer including first and second regions; an insulating layer covering the semiconductor layer; and first and second plugs extending to pass through the insulating layer and electrically connected to the corresponding first and second regions. The first plug is in a rectifying contact with the first region, and the second plug is in an ohmic contact with the second region.

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Seongnam-si, South Korea

Ho-chul Ji