Samsung Electronics Co., Ltd.

Ho-Chul Ji

Kyoung Ho Ha

Kyoung-ho Ha

Pil-Kyu Kang

Dong Jae Shin

Jung Hyung Pyo

Kwang Hyun Lee

Dong-jae Shin

Kyoung Won Na

Keun-yeong Cho

Kyoung-won Na

Seong-gu Kim

Sung-Dong Suh

In-sung Joe

Seong Gu Kim

Jin-kwon Bok

Yoon-Dong Park

Ki-Nam Kim

Kwang-Hyun Lee

Dae-lok Bae

Gi-Tae Jeong

In Sung Joe

Yoon Sun Park

Yong-woo Hyung

Seung-Hyuk Chang

Keun Yeong Cho

Kwan-Sik Cho

Sung Dong Suh

Hyun-il Byun

Yong Hwack Shin

Jung-Hyung Pyo

A photonic integrated circuit includes a main light source, a redundant light source, a controller, an optical switch, and a modulator. The main light source outputs main light through a main light input waveguide. The redundant light source outputs redundant light through a redundant light transmission waveguide. The controller generates a first switch signal based on a fault state of the main light source. The optical switch selectively provides the redundant light from the redundant light transmission waveguide to a redundant light input waveguide based on the first switch signal. The modulator modulates main light from the main light input waveguide or redundant light from the redundant light input waveguide and outputs a first optical signal.

Photonic integrated circuit and optical transmitter

A photodiode includes a semiconductor substrate, a crystalline layer on the semiconductor substrate, an insulating pattern layer on the crystalline layer to define a plurality of holes exposing a top surface of the crystalline layer, a seed layer in the plurality of holes and directly on the crystalline layer, and a light absorption layer on the seed layer and the insulating pattern layer.

Photodiodes including seed layer

A photoelectric conversion device includes a substrate having a first surface and a second surface that is an opposite side of the first surface, wherein one of the first and second surfaces is a light incidence surface, a photodiode (PD) formed in the first surface of the substrate, a reflective layer formed on one of the first and second surfaces of the substrate, which is the opposite side of the light incidence surface, and a microlens formed on the light incidence surface of the substrate.

Photoelectric conversion device and optical signal receiving unit having photodiode

Integrated circuit device packages including optical elements are provided. The integrated circuit device package may include an integrated circuit device and a conductive pad on a first surface of the integrated circuit device. The conductive pad may be electrically connected to the integrated circuit device and may be configured to transmit an electrical signal. The integrated circuit device package may also include an optical element in the integrated circuit device and the optical element may be configured to transmit an optical signal through a second surface of the integrated circuit device that is opposite the first surface of the integrated circuit device.

Integrated circuit device packages including optical elements

An optical memory module comprises one or more memory devices configured to store data, and one or more optical interface modules configured to perform optical communication between the memory devices and an external device. Each of the optical interface modules comprises an input-output light distribution unit configured to divide received light to produce transmission light and reception light, an electrical-to-optical conversion unit configured to perform optical modulation based on the transmission light and an electrical transmission signal to generate an optical transmission signal, and a coherent optical-to-electrical conversion unit configured to perform a coherent reception based on the reception light and an optical reception signal to generate an electrical reception signal.

Optical interface module for coherent reception, optical memory module, and optical memory system comprising same

An optical memory system according to example embodiments includes a plurality of memory modules, each memory module including a plurality of memory devices; a light source; a light distribution unit connected to the light source through a first optical transmission line; a plurality of second optical transmission lines connected between the light distribution unit and the plurality of memory modules; a plurality of electrical to optical converters, each connected to at least one of the second optical transmission lines; and a plurality of output optical transmission lines connected to the plurality of electrical to optical converters, each output optical transmission line for outputting an electrical to optical converted signal.

Optical memory system including an optically connected memory module and computing system including the same

A semiconductor package and a semiconductor device including the same. The semiconductor package includes: a package substrate; a plurality of connection elements that are disposed on the package substrate; and a semiconductor chip that includes at least one optical input/output element that transmits/receives an optical signal to/from the outside at an optical input/output angle with respect to a direction perpendicular to a bottom surface of the package substrate, and is electrically connected to the package substrate through the plurality of connection.

Semiconductor package and semiconductor device including the same

A photodetector structure can include a silicon substrate and a silicon layer on the silicon substrate, that can include a first portion of an optical transmission medium that further includes a silicon cross-sectional transmission face. A germanium layer can be on the silicon substrate and can include a second portion of the optical transmission medium, adjacent to the first portion can include a germanium cross-sectional transmission face butt-coupled to the silicon cross-sectional transmission face.

Photodetector structures including cross-sectional waveguide boundaries

An optical modulator comprises a bulk-silicon substrate comprising a trench having a predetermined width and a predetermined depth. A bottom cladding layer is formed in the trench, and a plurality of waveguides and a phase modulation unit are formed on the bottom cladding layer. A top cladding layer is formed on the plurality of waveguides and the phase modulation unit.

Optical modulator formed on bulk-silicon substrate

An optical modulator includes a light input/output unit receiving an incident optical signal which has not been modulated, splitting the incident optical signal into a first optical signal and a second optical signal, and transmitting the first and second optical signals to a first path and a second path, respectively, of an optical waveguide. A phase shifter is positioned in at least one of the first and second paths and modulates a phase of at least one of the first and second optical signals, which have been received through the first and second paths, respectively, in response to an electrical signal. A phase-modulated signal is output. A reflective grating coupler reflects signals respectively received through the first and second paths back along the first and second paths respectively.

Optical modulator with reduced size and optical transmitter including the same

A de-emphasis format signal generator can be configured to combine first and second electrical non-de-emphasis formatted signals provided to first and second optical modulators, coupled in parallel with one another, to provide a combined optical signal having a de-emphasis format. Accordingly, three aspects of a de-emphasis formatted signal, including a de-emphasis delay aspect, a de-emphasis attenuation aspect, and a de-emphasis combining aspect, can provided separately and in different domains (such as in the electrical domain and in the optical domain) which can be combined with one another to provide an output de-emphasis formatted optical signal.

Optical modulators for generating de-emphasis formatted optical signals and methods of operating the same

Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Optical waveguide and coupler apparatus and method of manufacturing the same

An optical modulator structure can include a core region that comprises an optical transmission path having a refractive index that is modulated via electric charge introduced into the core region. A plurality of first vertical slabs comes into contact with and is spaced along a first side of the core region to provide a first path for the electric charge to/from the core region. A plurality of second vertical slabs come into contact with and is spaced along a second side of the core region, that is opposite to the first side, to provide a second path for the electric charge to/from the core region. Other structures and methods are disclosed.

Silicon based optical modulators including vertical slabs and methods of forming

A method of manufacturing a photodetector structure is provided. The method includes forming a structural layer by making a trench in a bulk silicon substrate and filling the trench with a cladding material, forming a single-crystallized silicon layer on the structural layer, and forming a germanium layer on the single-crystallized silicon layer.

Photodetector structure and method of manufacturing the same

Provided is a memory module, a system using the memory module, and a method of fabricating the memory module. The memory module may include a printed circuit board and a memory package on the printed circuit board. The printed circuit board may include an embedded optical waveguide and a first optical window extending from the optical waveguide to a first surface of the printed circuit board. The memory package may also include a memory die having an optical input/output section and a second optical window. The optical input/output section, the second optical window, and the first optical window may be arranged in a line and the first optical window and the second optical window may be configured to at least one of transmit an optical signal from the optical waveguide to the optical input/output section and transmit an optical signal from the optical input/output section to the optical waveguide.

Growing community of inventors

Yongin-si, South Korea

Ho-Chul Ji