Vanguard International Semiconductor Corporation

Ho-Chien Chen

Tsung-Hsiung Lee

Chun-Ting Yang

Yu-Ting Wei

The present disclosure relates to a semiconductor structure. The semiconductor structure includes a semiconductor-on-insulator (SOI) substrate having a bottom substrate, a buried oxide layer disposed on the bottom substrate, and a semiconductor layer disposed on the buried oxide layer. The semiconductor structure further includes a doped layer embedded in the semiconductor layer and above the buried oxide layer, and a contact structure extending into the semiconductor layer from the top surface of the semiconductor layer. The contact structure is electrically connected to the doped layer.

Semiconductor structure and method for manufacturing the same

A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a semiconductor layer formed on the substrate. The semiconductor structure includes an isolation structure through the semiconductor layer, and the isolation structure has an opening with a first width, and the isolation structure has a vacuum gap. The semiconductor structure also includes a contact plug structure through the semiconductor layer, and the contact plug structure has an opening with a second width, and the second width is greater than the first width.

Semiconductor structure and method for forming the same

The present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor on an insulator (SOI) substrate having a bottom substrate, a buried oxide layer on the bottom substrate, and a semiconductor layer on the buried oxide layer. The semiconductor device also includes a first dielectric layer disposed on the semiconductor layer, a first contact structure extending from a top surface of the first dielectric layer through the semiconductor layer and the buried oxide layer and contacting the bottom substrate, and a first trench extending into the semiconductor layer. A width of the first trench is smaller than a width of the first contact structure. The first dielectric layer seals the first trench at or near the top of the first trench to form a vacuum gap.

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Keelung, Taiwan

Ho-Chien Chen