Lg Display Co., Ltd.

Snu Rdb Foundation

Ho-Cheol Kang

Young-Hoon Noh

Dae-Won Kim

Min-Joo Kim

Chang-Hee Lee

Seong-Hoon Lee

Han-Saem Kang

Ho-Jin Kim

Nack-Bong Choi

Young-Mi Kim

Kook Heon Char

Wan Ki Bae

Kook-Heon Char

Jeong-Hun Kwak

Dong-Gu Lee

Jae-Hoon Lim

Jae Hoon Lim

Dong Gu Lee

Jeong Hun Kwak

Wan-Ki Bae

The present invention relates to a quantum dot light emitting element which can form a quantum light emitting layer configured of charge transporting particles and quantum dots and a charge transporting layer in a solution process, to reduce process expense, and a method for manufacturing the same. The quantum dot light emitting element includes a substrate, an anode formed on the substrate, a quantum light emitting layer formed on the anode, the quantum light emitting layer having charge transporting particles and quantum dots mixed therein, and a cathode formed on the quantum light emitting layer.

Quantum dot light emitting element and method for manufacturing the same

An array substrate for a display device, including a substrate having a pixel region and a switching region, a source electrode and a drain electrode on the switching region of the substrate, ends of the source and drain electrodes having tapered edges, a pixel electrode in the pixel region of the substrate, the pixel electrode being connected to the drain electrode, an organic semiconductor layer on the source and drain electrodes, the organic semiconductor layer completely contacting tapered edges and a top surface of each of the source and drain electrodes, a first insulating layer on the organic semiconductor layer, and a gate electrode on the first insulating layer.

Array substrate for liquid crystal display device and method of fabricating the same

An electrophoretic display device includes: a first substrate having a plurality of pixels formed in a plurality of vertical pixel rows and a plurality of horizontal pixel rows; a plurality of data lines formed at every vertical pixel row of the first substrate; a thin film transistor (TFT) formed at each pixel of the first substrate and including a source electrode, a drain electrode, an organic semiconductor layer, and a gate electrode; a passivation layer formed on the TFTs and the data lines of the first substrate and including a first contact hole exposing the drain electrode of the TFT and a second contact hole exposing the gate electrode of the TFT; a pixel electrode formed on the passivation layer at each pixel of the first substrate and connected with the drain electrode of the TFT via the first contact hole of the passivation layer; a plurality of gate lines formed on the passivation layer at every horizontal pixel row of the first substrate and connected with the gate electrode of the TFT via the second contact hole of the passivation layer; a second substrate attached to the first substrate in a facing manner; a common electrode formed on the second substrate; and an electrophoretic film formed between the first and second substrates.

Electrophoretic display

The present invention relates to a quantum dot light emitting diode device in which a hole transportation layer is formed after forming a quantum dot light emitting layer by a solution process by applying an inverted type quantum dot light emitting diode device for making free selection of a hole transportation layer material that enables easy injection of a hole to the quantum dot light emitting layer; and display device and method therewith.

Quantum dot light emitting diode device and display device therewith

Method for fabricating an electrophoretic display having simplified process

An array substrate for a liquid crystal display device includes a first source electrode and a first drain electrode on a substrate, wherein the first source electrode and the first drain electrode are separated from each other and formed of a metallic material, a second source electrode and a second drain electrode on the first source electrode and the first drain electrode, respectively, and are formed of a transparent conductive material, wherein the second source electrode covers an upper surface of the first source electrode, and the second drain electrode covers an upper surface of the first drain electrode, a pixel electrode on the substrate and contacting the second drain electrode on the substrate, an organic semiconductor layer on the substrate, a gate insulating layer on the organic semiconductor layer, and a gate electrode on the gate insulating layer.

Growing community of inventors

Gyeonggi-do, South Korea

Ho-Cheol Kang