Samsung Electronics Co., Ltd.

Ho Chang Lee

Jong Woo Sun

Je Woo Han

Masayuki Tomoyasu

Young Hoon Jeong

Sung Moon Park

Kyeong Bin Lim

Kwang Nam Kim

Sung Hyup Kim

Jeong Min Na

Hyo Ju Kim

A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to −100 MPa.

Semiconductor device and a manufacturing method thereof

A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Substrate processing apparatus and method of processing a substrate

A semiconductor device including: a substrate; a via which penetrates the substrate; a via insulating film formed along an inner wall of the via; and a core plug which fills the via, wherein a residual stress of the via insulating film is 60 MPa to &#x2212;100 MPa.

Substrate processing apparatus including edge ring

Growing community of inventors

Hwaseong-si, South Korea

Ho Chang Lee