Solid State Storage Technology Corporation

Lite-on Technology Corporation

Lite-on Electronics (guangzhou) Limited

Ho-An Lin

Liang-You Lin

Fang-Chien Chai

Ya-Ping Pan

Yu-Chuang Peng

Chun-Ju Chiu

A FTL table processing method for a solid state drive is provided. When the control circuit intends to perform the backup action on a FTL table, the control circuit calculates the size of a remaining space of a used block. Then, the control circuit judges whether the complete content of the FTL table is required to be backed up to the blank block. If the size of the remaining space of the used block is enough, the control circuit backs up the amended contents of the FTL table and a content changed table to the remaining space of the used block. Whereas, if the size of the remaining space of the used block is not enough, the control circuit backs up the complete content of the FTL table to a plurality of blank blocks.

Flash translation layer table processing method for solid state drive

A data processing method for a solid state drive includes the following steps. When a write command is received, the write command is executed to store a write data into a first number of blocks of the plural blocks, a block-closing action is performed to generate a first number of used blocks, and the logical-to-physical table is updated. When a trim command is received, the trim command is executed to change a second number of used blocks to a second number of unused blocks, a physical-to-logical data corresponding to the second number of used blocks is stored into a trim block of the non-volatile memory, and the logical-to-physical table is updated. A backup action is performed at plural time points to generate plural backup contents corresponding to the plural time points, respectively. The plural backup contents are stored into the non-volatile memory.

Data processing method for solid state drive

A data processing method for a solid state drive is provided. The solid state drive includes a control circuit and a non-volatile memory. The control circuit includes a logical-to-physical table. The non-volatile memory includes plural blocks. When a data area of a data block is fully occupied with a write data, a block-closing action is performed on the data block. After the block-closing action is completed, a close information corresponding to the data block is stored into an information area of the data block and the data block is recognized as a used block. When a trim command is received, the control circuit judges whether the used block is changed to an unused block according to the trim command. If the used block is changed to the unused block, the close information is stored into a trim block.

A flash translation layer table rebuilding method for a solid state drive is provided. The solid state drive includes a non-volatile memory and a buffering circuit. Firstly, a flash translation layer table is loaded from the non-volatile memory to the buffering circuit. In case that an abnormal shutdown event occurs, plural blocks of the non-volatile memory to be read are determined according to a specified block programming serial number of the flash translation layer table. Then, a read sequence of reading the plural blocks is determined according to a block programming serial number or an auxiliary serial number corresponding to the block. The contents of the blocks are read according to the read sequence. A mapping relationship between plural physical allocation addresses and plural logical block addresses of the flash translation layer table is updated.

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Taipei, Taiwan

Ho-An Lin