Samsung Electronics Co., Ltd.

Hlon-suck Baik

Sang-jin Park

Eun-ha Lee

Kwang-soo Seol

Jong-bong Park

Min-ho Yang

Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, wherein the charge trap layer is doped with aluminum (Al). The non-volatile memory device may include a substrate including a source and a drain on separate regions of the substrate, a tunneling film on the substrate contacting the source and the drain, the charge trap layer according to example embodiments, a blocking film on the charge trap layer, and a gate electrode on the blocking film.

Growing community of inventors

Cheonan-si, South Korea

Hlon-suck Baik