Hyundai Motor Company

Kia Motors Corporation

Hiyoshi Michiaki

Sung Min Park

A connection structure of a snubber circuit within a semiconductor device includes: a first substrate having a first electrode wiring line; a second substrate facing the first substrate, the second substrate having a second electrode wiring line facing the first electrode wiring line; and a stack ceramic capacitor having connection terminals provided on opposite ends, respectively, of the stack ceramic capacitor installed in an upright position in such a manner that entire surfaces of the connection terminals are connected to the first and second electrode wiring lines, respectively, where the stack ceramic capacitor is installed adjacent to a switching element attached on the first substrate, and the connection terminal and one electrode terminal on the switching element are connected with the first electrode wiring line interposed therebetween.

Connection structure of snubber circuit within semiconductor device and power module structure using same

A semiconductor sub-assembly and a semiconductor power module capable of having the reduced thickness of a chip and reduced thermal resistance are provided. The semiconductor sub-assembly includes a single or a plurality of semiconductor chips having a first electrode that is formed on the lower surface thereof, a second electrode that is formed on the upper surface thereof, and a plurality of chip-side signal electrode pads that are formed at one end of the upper surface thereof. The semiconductor chip is embedded in the embedded structure and a plurality of extension signal electrode pads are connected to each of the chip-side signal electrode pads. The extension signal electrode pad is formed on the embedded substrate in a size greater than the chip-side signal electrode pad when viewed on the plane.

Growing community of inventors

Kanagawa, Japan

Hiyoshi Michiaki