Ngk Spark Plug Company, Limited

Hitoshi Yokoi

Kazushige Ohbayashi

Takeshi Sugiyama

Masayuki Motomura

Keisuke Tashima

Toshiya Matsuoka

Motohiko Sato

Tadashi Hattori

Takafumi Oshima

Yasuyuki Okimura

Masakazu Watanabe

Satoshi Iio

Yasuo Okuyama

Masatoshi Ueki

Kenshiro Nakashima

Noboru Ishida

Tatsuya Suzuki

Ryuji Inoue

Akiyasu Okuno

Satoshi Sugaya

Akifumi Tosa

Hidetoshi Mizutani

Shiro Kakimoto

Norimasa Osawa

Masamichi Ito

Takaaki Chosokabe

Masahiko Nishi

Hiroyuki Nishiyama

Koichi Imaeda

Masanori Takase

Atsushi Satsuma

Koichi Fujita

Tomimasa Ito

Toshiya Matuoka

A particulate detection system () for detecting the amount of particulates S in a gas under measurement EG includes a detection section (), a drive circuit (), and a drive control section (). The detection section includes a first potential member () maintained at a first potential PV, a second potential member () maintained at a second potential PVE, PV, and an insulating member () disposed between the first and second potential members. The system includes insulation test means (, S, S) for testing the degree of insulation between the first and second potential members. The drive control section includes drive permission/prohibition determination means S, Sfor determining, on the basis of the degree of insulation tested by the insulation test means, whether to permit the drive of the detection section by the drive circuit.

Microparticle detection system

A particulate sensor including a sensor unit () having an ion generation section (); an electric charge section () for electrically charging at least portion of particulates S using ions PI; a capture section () for trapping at least portion of the ions PI not used for electrically charging the particulates S; and a sensor ground section () connected to the capture section and having a first floating potential corresponding to the amount of the ions PI trapped by the capture section. The sensor unit can detect the amount of the particulates S in the gas on the basis of the electric potential of the sensor ground section. The sensor ground section is covered with insulating ceramic at that outer portion of the sensor unit which comes into contact with the gas.

Microparticle sensor

A particulate detection system () includes detection section (), compressed air source () which includes compressor () for producing compressed air AK, compressor drive circuit () and control means (). The detection section includes a gas jetting source (). A drive condition for jetting air AR from jetting hole (N) at a first flow rate Qis defined as a first drive condition JK, and a drive condition for jetting the air AR at a second flow rate Qsmaller than the first flow rate Qis defined as a second drive condition JK. The control means includes first instruction means Sfor driving the compressor under the first drive condition JKwhen the quantity of the particulates S is detected, and second instruction means Sfor driving the compressor under the second drive condition JKwhen the quantity of the particulates S is not detected.

A particulate detection system () detects the quantity of particulates S contained in exhaust gas EG discharged from an internal combustion engine ENG and flowing through an exhaust pipe EP. The system () includes a detection section () attached to the exhaust pipe EP; and a drive processing circuit () electrically connected to the detection section (), driving the detection section (), and detecting and processing a signal Is from the detection section. The drive processing circuit () includes drive start delay means (S, S, S, S, S, S, S) for delaying start of the drive of the detection section () until a start condition determined by the drive processing circuit () is satisfied after startup of the internal combustion engine ENG.

Particulate detection system

There is provided a fine particle detection system with a fine particle sensor, a cable and a sensor drive control device. The fine particle sensor has an ion source unit with first and second electrodes, a particle charging unit and inner and outer sensor casings. The cable has a power supply wiring line connected to the second electrode, an inner shield line electrically continuous with the inner sensor casing and an outer shield line electrically continuous with the outer sensor casing. The sensor drive control device has an ion-source power supply circuit, a signal current detection circuit, an inner circuit casing electrically continuous with a first output terminal of the ion-source power supply circuit and surrounding the ion-source power supply circuit and an outer circuit casing connected to the ground potential and shielding the ion-source power supply circuit, the signal current detection circuit and the inner circuit casing.

Fine particle detection system

In a temperature sensor (), a pair of electrode wires () of a thermistor element () are formed of a material prepared by adding strontium to platinum or a platinum alloy and without addition of zirconia or a like oxide. Rear end portions of the electrode wires () formed of the above-mentioned material and front end portions of sheath core wires () are laser-welded to one another in an overlapping condition.

Temperature sensor

There is provided a fine particle sensor for detecting fine particles in exhaust gas, including an ion generating unit for generating ions by corona discharge, a charging unit for charging the fine particles by some of the generated ions, an ion trapping unit for trapping a remainder of the generated ions and a casing for accommodating therein the charging unit and the ion trapping unit in a given arrangement direction. The casing has a gas inlet hole and a gas outlet hole formed in a circumferential wall thereof so that the exhaust gas flows in the charging unit through the gas inlet hole and flows out of the ion trapping unit through the gas outlet hole. The gas inlet hole and the gas outlet hole are arranged in such a manner as to at least partially overlap each other when viewed in the given arrangement direction.

Fine particle sensor and mounting structure therefor

A temperature sensor is provided. The temperature sensor includes: a temperature sensitive element having a temperature sensitive body and an element electrode wire; a sheath member having an external cylinder, the sheath member encompassing a sheath core wire to be bonded to the element electrode wire in the external cylinder; an enclosing member having a bottom-closed cylindrical shape extending in an axial direction, at least the temperature sensitive element and a bond portion of the element electrode wire and the sheath core wire being accommodated in an internal space of the bottom-closed cylindrical shape, and a holding member that is filled in the internal space, wherein an air gap is provided at least between an outer surface of the temperature sensitive body and the holding member so as to permit displacement of the temperature sensitive body in a direction intersecting the axial direction of the enclosing member.

Temperature sensor and method of producing the same

An object of the invention is to provide a resistor element that makes it possible to adjust the resistance value of a precursor easily in producing a resistance element having a target resistance value from the precursor, as well as to the precursor and a related resistance value adjusting method. A precursorhas a meandering resistance pattern formed on a front surfaceof a substrateas well as at least three trimming lines. The precursoris configured so as to be defined by a geometric sequence that satisfies Inequality 0.5&#x3b1;&#x3c;&#x3b1;&#x3c;&#x3b1;, where &#x3b1;is the general term of the sequence that is obtained by arranging, in descending order, resistance value increases of the precursor at the time of cutting of the respective trimming lines and normalizing the thus-arranged resistance value increases by an initial resistance value of the precursor in a state that none of the trimming lines are cut.

Resistance element, its precursor, and resistance value adjusting method

In an ammonia sensor (), lead portions () and () are provided on an insulating substrate (); a pair of comb-shaped electrodes () and () are connected to the lead portions () and (), respectively; a sensitive layer () is provided on the comb-shaped electrodes () and (); and a protective layer () is provided on the sensitive layer (). Particularly, the sensitive layer () is formed of a gas-sensitive raw material predominantly containing ZrOand containing at least W in an amount of 2 to 40 wt. % as reduced to WO.

Ammonia sensor

A platinum temperature sensor incorporating an evaporation-suppressing layer containing platinum in the vicinity of the platinum thin-film resistor of the sensor. The evaporation-suppressing layer is preferably positioned between the platinum resistor and a porous layer that is formed close to the platinum resistor and in contact with the evaporation-suppressing layer.

Platinum resistor temperature sensor

An ohmic electrode for an SiC semiconductor includes a p-type Si layer formed on the surface of a p-type SiC semiconductor, and a metal silicide layer formed on the surface of the Si layer, the metal silicide layer being formed from a metal silicide such as PtSi. The p-type Si layer is preferably formed from p-type Si having a carrier concentration equal to or higher than that of the aforementioned p-type SiC. Preferably, the ohmic electrode is formed as follows: deposition of Si is performed; deposition of a metal silicide is performed by means of laser ablation; laser irradiation is performed to thereby improve ohmic properties and enhance adhesion between the result deposition layer and the p-type SiC semiconductor, and then further deposition of the metal silicide is performed by means of laser ablation.

Electrode for silicon carbide semiconductor, silicon carbide semiconductor element comprising the electrode, and production method therefor

A gas sensor having a pn junction including two discrete electrical conductive-type layers, namely, a first semiconductor layer and a second semiconductor layer, disposed in contact with each other. Ohmic electrodes are formed on the respective surfaces of the semiconductor layers. A catalytic layer containing a metallic catalytic component which dissociates hydrogen atom from a molecule having hydrogen atom is formed on one of the ohmic electrodes. The pn junction diode-type gas sensor has a simple constitution, exhibits a small change in diode characteristics with time in long-term service and is capable of detecting a gas concentration of a molecule having a hydrogen atom, for example, H , NH , H S, a hydrocarbon and the like, contained in a sample gas.

Gas sensor

Disclosed is a dielectric material comprising: 100 parts by weight of a main component having a composition represented by formula: xBaO&mdash;yRE O &mdash;zTiO , wherein RE represents at least one rare earth element and x&plus;y&plus;z&equals;100 mol %; 5 parts by weight or less of at least one alkali metal oxide; and 5 parts by weight or less of Bi O .

Dielectric material and process for producing the same

Disclosed is a dielectric material comprising: a main ingredient having a composition represented by xBaO-yRE,O,-zTiO,, wherein RE represents at least one rare earth element, and x&plus;y&plus;z&equals;100 mol %; at least one alkali metal oxide; and an ingredient derived from an oxygen supplying agent which releases oxygen on heating.

Growing community of inventors

Aichi, Japan

Hitoshi Yokoi