Sumitomo Chemical Company, Limited

The Texas A&m University System

Other

Hitoshi Yasuda

Akihiko Takahashi

Karl T Hartwig

Lacy Clark McDonald

Masahiro Hasegawa

Hong Zou

Takitaro Yamaguchi

Kenichi Kikuchi

Genzo Iwaki

Hidezumi Moriai

Noriyuki Tatsumi

Fumikazu Hosono

There is provided a negative electrode comprising an aluminum alloy, wherein the alloy has a magnesium content of 0.0001% by weight or higher and 8% by weight or lower, the alloy satisfies at least one condition selected from the group consisting of the following (A) and (B):

Negative electrode and aluminum air cell

A tube made of oxygen free copper is filled with a plurality of copper matrix Nb&mdash;Ti superconducting lead wires to obtain a composite billet. The resulting billet is subjected to hydrostatic pressure extrusion. Further, ageing heat treatment and wire drawing process are repeated for the composite material three times to prepare a Cu/Nb&mdash;Ti superconducting single wire. Then, the resulting Cu/Nb&mdash;Ti superconducting single wires are stranded each other to produce a superconducting strand. The superconducting strand is coated with an aluminum alloy to which either a content of 20 to 100 ppm of Cu and Mg or Mg, or a content of 10 to 120 ppm of Si and Cu is added by means of hot extrusion, the strand thus extruded is reduced by 0 to 20% in accordance with cold working to produce an aluminum stabilized superconductor. As a result, such aluminum stabilized superconductor having high mechanical strength as well as good thermal and electrical stability is provided while achieving light weight and downsizing thereof.

Aluminum stabilized superconductor with Cu and Mg

A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 mm/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

Sputtering target of single crystal aluminum alloy and method for

A sputtering target of a single crystal aluminum alloy which has a uniform concentration distribution of an added metal element and a controlled crystal orientation is prepared using a continuous casting apparatus equipped with a starting rod by solidifying a melt of aluminum having a purity of at least 99.9 wt. % which contains 0.1 to 3.0 wt. % of at least one metal element selected from the group consisting of elements having atomic numbers of 3 to 83, at a casting temperature of 670 to 850.degree. C. at a casting rate of 1 to 80 m/min. in one direction with maintaining an angle between a center axis of a continuous casting mold and a direction of pulling a casting material at 2 degrees or less.

Sputtering target of single crystal aluminum alloy

The present invention concerns an aluminum alloy conductor of a cryostatic stabilizer for use at ultra low temperatures of 30.degree. K. or lower which is provided on and around a superconductor. The aluminum alloy conductor is made of 6 to 200 weight ppm of at least one element selected from the group of metallic and semimetallic effective elements consisting of B, Ca, Ce, Ga, Y, Yb and Th, and aluminum and inevitable impurities. The aluminum alloy conductor is obtained by adding at least one of these elements into a high purity aluminum whose purity is at least 99.98 wt. %. The aluminum alloy conductor has a 0.2% proof strength of not greater than 2.6 Kg/mm.sup.2.

High purity aluminum alloy conductor for use at ultra low temperatures

A method for manufacturing an aluminum alloy conductor for use at ultra low temperature which involves the steps of adding at least one of the metallic and semimetallic effective elements selected from the group consisting of B, Ca, Ce, Ga, Y, Yb and Th, in a total amount of 6 to 200 weight ppm, into a previously prepared molten high purity aluminum having a purity of not less than 99.98 wt % to thereby obtain a molten metal mixture; casting the molten metal mixture to thereby obtain a casting; subjecting the casting to extrusion working at 150.degree. C. to 350.degree. C. in an area reduction ratio of 1:10 to 1:150 whereby an extrusion worked product is formed; and annealing the extrusion worked product at a temperature of 250.degree. C. to 530.degree. C. for 3 to 120 minutes, whereby an aluminum alloy conductor for use at ultra low temperature is obtained.

Method of manufacturing a micro-alloy high purity aluminum conductor for

The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30.degree. K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt % so as to consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of &lt;111&gt; or &lt;100&gt; or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of &lt;111&gt; and/or &lt;100&gt;, or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.

Method for making a high purity aluminum conductor used at ultra low

The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30.degree. K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt %. The crystal structure consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of &lt;111&gt; or &lt;100&gt; or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of &lt;111&gt; and/or &lt;100&gt;, or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.

High purity aluminum conductor used at ultra low temperature

Disclosure is a method for producing a cryostatic stabilizer composed of high-purity aluminum which comprises extruding the high-purity aluminum at an extrusion temperature of 250.degree. to 500.degree. C., an extrusion speed of not more than 20 m/min and an extrusion ratio of 10 to 150 by using an extruding machine equipped with a cylindrical die having helical grooves or projections on the inner surface. The method is industrially advantageous.

Method for producing a cryostatic stabilizer

Aluminum bar having a helical contour continuously cast using a mold comprising a heating unit and a cooling unit which have a groove or protrusion helically cut on the inner wall surface, and casting aluminum while conducting rotation and withdrawing in conformity with the slope of the helix.

Growing community of inventors

Tsukuba, Japan

Hitoshi Yasuda