Kabushiki Kaisha Toshiba

Other

Hitoshi Yagi

Koichi Ishii

Keita Sasaki

Ikuo Fujiwara

Masahiro Hosoya

Hideyuki Funaki

Honam Kwon

Yasushi Shinjo

Hiroto Honda

Masaki Atsuta

Kazuhiro Suzuki

Rei Hasegawa

Risako Ueno

Mitsunaga Saito

Masako Ogata

Takeshi Watanabe

Haruhi Oh-Oka

Noriko Yamamoto

Katsuyuki Naito

Tadashi Sakai

Isao Takasu

Chiaki Tanuma

Akira Kinno

Manabu Tanaka

Mitsushi Ikeda

Isao Amemiya

Toshiya Yonehara

Haruhi Oooka

Shiroh Saitoh

Mitsuhiko Iida

Sadao Kajiura

Yuka Yamaguchi

Haruhi Oh-oka

A photodetector includes a first semiconductor layer and a second semiconductor layer provided on the first semiconductor layer and detecting light. The first semiconductor layer has a cavity portion for reflecting incident light.

Photodetector, photodetection system, lidar apparatus, vehicle, and method of manufacturing photodetector

A photodetector according to an embodiment includes: a substrate with a first and second faces; pixels disposed to the substrate, each pixel including: light detection cells disposed on the first face, each light detection cell being surrounded by a first opening having a continuous closed curve shape formed on the second face when viewed from a side of the second face; a first wiring line disposed on the first face to connect to each of the light detection cells; first electrodes, each of the first electrodes being disposed in corresponding one of third openings and connected to the second face, the third openings being disposed in a first insulating film and exposing a part of respective regions of the light detection cells in the second face; a second electrode disposed on the second surface and connecting the first electrodes; and a light blocking material filled to the first opening.

Photodetector and radiation detector

A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels disposed to the semiconductor substrate, each pixel including: light detection cells disposed on the first face, each light detection cell having a first and second terminals, each light detection cell being surrounded by the groove; a first wiring line disposed on the first face to connect to the first terminal of each of the detection cells; a first opening formed in the second face and penetrating the semiconductor substrate; a first insulating film covering the second face, a side face of the first opening, and a side face and a bottom of the groove; a second opening formed in the first insulating film; a first and second electrodes disposed in the first and second openings respectively; and a light blocking material filled to the groove.

Photodetector, method of manufacturing photodetector, radiation detector, and radiation detection apparatus

According to an embodiment, a photodetector includes a photodetecting element that has a pn junction and outputs a photocurrent corresponding to detected light, a voltage applying unit that applies a voltage to the photodetecting element, an obtaining unit that obtains the photocurrent detected by the photodetecting element, and a voltage controller. The voltage controller controls the voltage applying unit to apply, during a drive period, a drive voltage whose absolute value is not smaller than an avalanche breakdown voltage of the pn junction and which is in reverse bias with respect to the pn junction; and apply, during a standby period, any of a first standby voltage in forward bias, a second standby voltage with a voltage value of 0 V, and a third standby voltage whose absolute value is greater than 0 V, which is less than the drive voltage, and which is in reverse bias.

Photodetector

According to one embodiment, an infrared imaging device includes a substrate, a detecting section, an interconnection, a contact plug and a support beam. The detecting section is provided above the substrate and includes an infrared absorbing section and a thermoelectric converting section. The interconnection is provided on an interconnection region of the substrate and is configured to read the electrical signal. The contact plug is extends from the interconnection toward a connecting layer provided in the interconnection region. The contact plug is electrically connected to the interconnection and the connecting layer. The support beam includes a support beam interconnection and supports the detecting section above the substrate. The support beam interconnection transmits the electrical signal from the thermoelectric converting section to the interconnection.

Infrared imaging device and method for manufacturing same

An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.

Uncooled infrared imaging element and manufacturing method thereof

An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.

Infrared imaging element

An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

Uncooled infrared image sensor

Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

Infrared imaging device and method of manufacturing the same

An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

Image sensor and manufacturing method thereof

An image forming apparatus includes an optical unit which forms an electrostatic latent image on a surface of a photosensitive body, a developing device which supplies a liquid developer on the electrostatic latent image formed by the optical unit, and develops the electrostatic latent image into a develop image, a condensing device which condenses the developer image, and a transfer device which transfers the developer image condensed by the condensing device to a recording medium, while applying a shearing stress to the developer image.

Image forming apparatus and method in which a transfer medium transfers a developer image at a different surface velocity than a recording medium

Image forming apparatus which form an image on a substrate and uses a liquid developer containing toner particles and a solvent. One embodiment includes a latent image retaining body, a first developing surface facing the latent image retaining body at a first development station, a latent image forming unit, and a second developing surface facing the latent image retaining body at a second development station. The latent image retaining body has a photosensitive layer which has a dielectric constant &egr; &lsqb;C /Nm &rsqb; and an average thickness d &lsqb;m&rsqb;. The photosensitive layer retains an image developed by the first developing surface and a latent image comprising image and non-image regions formed by the latent image forming unit. The second developing surface is supplied with a developing electrical potential having an electrical potential difference &Dgr;V from an electrical potential of non-image region of the latent image. The plurality of toner particles of the first liquid developer has a volume density &rgr; &lsqb;kg/m &rsqb;, a surface density m &lsqb;kg/m &rsqb;, a dielectric constant &egr; &lsqb;C /Nm &rsqb;, an average radius r &lsqb;m&rsqb;, and a density of electrical charge q &lsqb;C/kg&rsqb;, and the image developed on the latent image retaining body by the first developing surface has an average thickness d &lsqb;m&rsqb; at the second development station. The second liquid developer has an average thickness d &lsqb;m&rsqb; at the second development station and a dielectric constant &egr; &lsqb;C /Nm &rsqb;, wherein following equations are satisfied,

Apparatus and method for image formation with a liquid developer

Image forming apparatus which form an image on a substrate and uses a liquid developer containing toner particles and a solvent. One embodiment includes a latent image retaining body, a first developing surface facing the latent image retaining body at a first development station, a latent image forming unit, and a second developing surface facing the latent image retaining body at a second development station. The latent image retaining body has a photosensitive layer which has a dielectric constant &isin; &lsqb;C /Nm &rsqb; and an average thickness d &lsqb;m&rsqb;. The photosensitive layer retains an image developed by the first developing surface and a latent image comprising image and non-image regions formed by the latent image forming unit. The second developing surface is supplied with a developing electrical potential having an electrical potential difference &Dgr;V from an electrical potential of non-image region of the latent image. The plurality of toner particles of the first liquid developer has a volume density &rgr; &lsqb;kg/m &rsqb;, a surface density m &lsqb;kg/m &rsqb;, a dielectric constant &isin; &lsqb;C /Nm &rsqb;, an average radius r &lsqb;m&rsqb;, and a density of electrical charge q &lsqb;C/kg&rsqb;, and the image developed on the latent image retaining body by the first developing surface has an average thickness d &lsqb;m&rsqb; at the second development station. The second liquid developer has an average thickness d &lsqb;m&rsqb; at the second development station and a dielectric constant &isin; &lsqb;C /Nm &rsqb;, wherein following equations are satisfied,

An electrophotographic device includes a control section configured to control operations of a charging unit, an exposure unit, and other units to satisfy a desired condition.

Electrophotographic device for transferring a plural color toner image

A planar X-ray detector including an X-ray-electric charge conversion film converting an incident X-ray into an electric charge, a pixel electrode contiguous to the X-ray-electric charge conversion film and arranged for every pixel, and a switching element connected to the pixel electrode. Also included is a signal line connected to the switching element, and a scanning line supplying a driving signal to the switching element. Further, the X-ray-electric charge conversion film contains phosphor particles, a photosensitive material, and a carrier transfer material.

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Yokohama, Japan

Hitoshi Yagi