National Institute of Advanced Industrial Science and Technology

Hitoshi Umezawa

Akinori Seki

Satoshi Yamasaki

Hideki Takagi

Kazuhiro Ikeda

Akiyoshi Chayahara

Norio Tokuda

Yoshiaki Mokuno

Shinichi Shikata

Hideaki Yamada

Yuuichi Kurashima

Hiroaki Saitoh

Nobuteru Tsubouchi

Shinya Ohmagari

Takashi Matsumae

Fumiaki Kawai

A composite that includes a base including an oxide layer MOx of an element M on a surface thereof and a diamond crystal base bonded to the surface of the base. The M is one or more selected from among metal elements capable of forming an oxide (excluding alkali metals and alkaline earth metals), Si, Ge, As, Se, Sb, Te, and Bi, and the diamond crystal base is bonded to the surface of the base by M-O—C bonding of at least some C atoms of the (111) surface of the diamond crystal base.

Composite having diamond crystal base

A stack including at least a semiconductor drift layer stacked on a single-crystal diamond substrate having a coalescence boundary, wherein the coalescence boundary of the single-crystal diamond substrate is a region that exhibits, in a Raman spectrum at a laser excitation wavelength of 785 nm, a full width at half maximum of a peak near 1332 cmdue to diamond that is observed to be broader than a full width at half maximum of the peak exhibited by a region different from the coalescence boundary, the coalescence boundary has a width of 200 &#x3bc;m or more, and the semiconductor drift layer is stacked on at least the coalescence boundary.

Stack comprising single-crystal diamond substrate

To provide a Schottky electrode in a diamond semiconductor, which has a good adhesion properties to diamonds, has a contacting surface which does not become peeled due to an irregularity in an external mechanical pressure, does not cause a reduction in yield in a diode forming process and does not cause deterioration in current-voltage characteristics, and a method of manufacturing the Schottky electrode. A Schottky electrode which includes: scattered island-form pattern Pt-group alloy thin films which are formed on a diamond surface formed on a substrate, in which the Pt-group alloy includes 50 to 99.9 mass % of Pt and 0.1 to 50 mass % of Ru and/or Ir, or which includes electrodes in a scattered island pattern, including: scattered island-form pattern metal thin films which are formed on a diamond surface formed on a substrate and include one selected from Pt and Pd; and metal thin films which include one selected from Ru, Ir and Rh and are provided on all of the metal thin films which include one selected from Pt and Pd, and a method of manufacturing the Schottky electrode.

Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor device

The present invention provides a method of selectively forming a flat plane on an atomic level on a diamond (001), (110) or (111) surface. A method of selectively forming a flat plane on a diamond surface comprising growing diamond on a stepped diamond surface of any of crystal structures (001), (110) and (111) by CVD (Chemical Vapor Deposition) under growth conditions such that step-flow growth of diamond is carried out thereafter.

Method of selectively forming atomically flat plane on diamond surface, diamond substrate produced by the method, and semiconductor device using the same

Growing community of inventors

Tsukuba, Japan

Hitoshi Umezawa