Sony Corporation

Sony Group Corporation

Hitoshi Tsuno

Koichi Nagasawa

A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. A gate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.

Display device, method of manufacturing display device, and electronic apparatus

A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate. Agate electrode of the thin film transistor with the top gate structure is provided in a same layer as a wire layer. A method of manufacturing a display device according to the present disclosure, the display device including a thin film transistor with a bottom gate structure and a thin film transistor with a top gate structure on a same substrate, includes: forming a gate electrode of the thin film transistor with the top gate structure in a same layer as a wire layer.

A liquid crystal display apparatus according to the present disclosure includes a first substrate, a second substrate, and a liquid crystal layer. A pixel electrode and a first orientation film are formed on the first substrate. A common electrode and a second orientation film are formed on the second substrate. The liquid crystal layer is disposed between the first orientation film and the second orientation film. The liquid crystal layer within a display area contains a protrusion that does not contribute to formation of a cell gap. The protrusion is formed by a same inorganic material as for an underlying film. An electronic equipment according to the present disclosure includes the liquid crystal display apparatus having the above-described configuration.

Liquid crystal display apparatus and electronic equipment

Provided is a liquid crystal display device that includes an effective pixel portion, a pixel drive portion, and a dummy pixel portion adjacent to the effective pixel portion. The effective pixel portion comprises effective pixels contributing to display. The dummy pixel portion includes dummy pixels not contributing to the display. The pixel drive portion drives the effective pixels of the effective pixel portion and the dummy pixels of the dummy pixel portion by reversing a voltage applied to a liquid crystal with a given period with a reference voltage as a center. The effective pixels and the dummy pixels each have a pixel transistor and a retention capacitor. In addition, with respect to retention characteristics of a pixel electric potential in relation to the reference voltage, the retention characteristics of the dummy pixel portion are made asymmetrical relative to the retention characteristics of the effective pixel portion.

Liquid crystal display device and electronic apparatus

A display device according to the present disclosure includes: a transistor section () that includes a gate insulating film (), a semiconductor layer (), and a gate electrode layer (), the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section () that includes a first metal film () and a second metal film (), the first metal film being disposed at a same level as wiring layers () that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film () in between; and a display element that is configured to be controlled by the transistor section.

Growing community of inventors

Tokyo, Japan

Hitoshi Tsuno