Taiyo Yuden Co., Ltd.

Hitoshi Tsukidate

Shinji Yamamoto

Michio Miura

Takuma Kuroyanagi

Kazushige Hatakeyama

Ryohei Komiyama

Tooru Takezaki

Osamu Ikata

Atsushi Kawasaki

Yasufumi Kaneda

Motoyuki Tajima

Kaoru Sakinada

Naoki Kakita

Koichi Satoh

Sho Iwasaki

A ladder-type filter includes a support substrate, a piezoelectric layer provided on the support substrate, a parallel resonator including first electrode fingers provided on the piezoelectric layer and having a first average pitch and a first average duty ratio, a largest first average pitch being equal to or greater than two times a thickness of the piezoelectric layer, a first end of the parallel resonator being coupled to a path between input and output terminals, a second end of the parallel resonator being coupled to a ground, and a series resonator connected in series between the input and output terminals, the series resonator including second electrode fingers provided on the piezoelectric layer and having a second average pitch and a second average duty ratio, a second average duty ratio in at least one series resonator being less than a smallest first average duty ratio.

Ladder-type filter and multiplexer

An acoustic wave device includes: a piezoelectric substrate bonded on a support substrate, a surface including protruding portions and/or recessed portions being interposed between the piezoelectric substrate and the support substrate; a first acoustic wave resonator that includes first electrode fingers with a first average pitch and is disposed on the piezoelectric substrate in a first region where an average interval between the protruding portions and/or the recessed portions in a direction in which the first electrode fingers are arranged is a first interval; and a second acoustic wave resonator that includes second electrode fingers with a second average pitch different from the first average pitch, and is disposed on the piezoelectric substrate in a second region where an average interval between the protruding portions and/or the recessed portions in a direction in which the second electrode fingers are arranged is a second interval different from the first interval.

Acoustic wave device, filter, and multiplexer

An electronic component includes: a first substrate having a first surface; a second substrate having a second surface facing the first surface across an air gap; a first coil pattern that is located on the first surface so as to face the second surface across the air gap; a second coil pattern that is located in a second region on the second surface and faces the first surface across the air gap, at least a part of the second region overlapping with a first region in plan view, the first region being formed of a region in which the first coil pattern is located and a region surrounded by the first coil pattern; and a connection terminal connecting the first coil pattern and the second coil pattern.

Electronic component

An acoustic wave device includes: a piezoelectric substrate: a pair of comb-shaped electrodes located on the piezoelectric substrate, each of the comb-shaped electrodes including a plurality of electrode fingers; a support substrate having protruding portions and/or recessed portions in a region overlapping with the pair of comb-shaped electrodes in plan view, the protruding portions and/or recessed portions being regularly arranged; and an insulating layer directly or indirectly bonded between the piezoelectric substrate and the support substrate, a boundary face between the insulating layer and the support substrate being provided along the protruding portions and/or the recessed portions.

An acoustic wave resonator includes: a piezoelectric substrate; a pair of comb-shaped electrodes that is located on the piezoelectric substrate and excites an acoustic wave, each of the pair of comb-shaped electrodes including a plurality of electrode fingers; and a polycrystalline substrate that is located at an opposite side of the piezoelectric substrate from a surface on which the pair of comb-shaped electrodes is located, an average particle size of the polycrystalline substrate being equal to or less than 66 times an average pitch of the plurality of electrode fingers.

Acoustic wave resonator, acoustic wave device, and filter

An acoustic wave device includes: a first substrate including a terminal located on a lower surface thereof; a second substrate including an acoustic wave element located on a lower surface thereof and mounted on the first substrate so that the element faces the first substrate; first bumps located between the first and second substrates, located between a first side of the first substrate and the element, and not connected to the element and the terminal; second bumps located between the first and second substrates, located between a second side facing the first side and the element, and not connected to the element and/or the terminal; and third bumps located between the first and second substrates, located only in a region located closer to the second side than the first bumps are and closer to the first side than the second bumps are, and connecting the element and the terminal.

Acoustic wave device

Acoustic wave device includes: a piezoelectric substrate; a first IDT located on the piezoelectric substrate; and a second IDT located on the piezoelectric substrate and connected in series to the first IDT, wherein the first IDT and the second IDT share a single common bus bar as a first bus bar of two bus bars of the first IDT and a first bus bar of two bus bars of the second IDT, and the common bus bar has a width not more than two times a wavelength of an acoustic wave propagating through the first and second IDTs, the common bus bar connects to no dummy electrode finger facing a tip of an electrode finger connected to a second bus bar of the two bus bars of the first IDT and the second IDT across a gap.

Acoustic wave device, filter, and duplexer

An acoustic wave device includes: a substrate; a first acoustic wave resonator and a second acoustic wave resonator located on the substrate; a first wiring line electrically coupled to the first acoustic wave resonator, located on the substrate, and located between the first acoustic wave resonator and the second acoustic wave resonator; and a second wiring line electrically coupled to the second acoustic wave resonator, located on the substrate, located between the first acoustic wave resonator and the second acoustic wave resonator, having an electric potential different from an electric potential of the first wiring line, and having a thickness greater than a thickness of the first wiring line.

Acoustic wave device and method of fabricating the same

An acoustic wave device includes: a substrate; an acoustic wave element that is formed on the substrate; a first wiring that is formed on the substrate and electrically connected to the acoustic wave element; a second wiring that is formed above the substrate via an air gap, and includes an edge fixed to the first wiring; a fixer that is formed on an edge of the first wiring, projects upwardly, and is fixed to the second wiring; and a projection that contacts the fixer, projects upwardly, and is formed on the edge of the first wiring and on an outside of the second wiring in a direction intersecting an extension direction of the second wiring.

Acoustic wave device and method for manufacturing the same

An acoustic wave device includes: a multilayer structure that has plural surfaces which principal surfaces of plural layers provide; a chip including an acoustic wave filter and mounted on a first surface; a resin unit sealing the chip; a wiring pattern that is formed on a second surface and electrically connected to at least one of resonators; a ground pattern that is formed on the second surface along a part of the wiring pattern, and is away from the wiring pattern; and an external terminal that is formed on a third surface and electrically connected to the wiring pattern and the ground pattern, the third surface being disposed on an opposite side of the first surface with respect to the second surface; wherein a part of the wiring pattern that comes closest to the ground pattern is substantially formed in parallel with the ground pattern.

Growing community of inventors

Tokyo, Japan

Hitoshi Tsukidate