Kawasaki Jukogyo Kabushiki Kaisha

Japan Science and Technology Agency

Osaka University

Minolta Company, Ltd.

The University of Tokyo

Arkray, Inc.

Hitoshi Tabata

Tomoji Kawai

Junzo Fujioka

Osamu Murata

Shichio Kawai

Shunichi Minakata

Takuya Matsumoto

Yoichi Otsuka

Fumihiko Yamada

Shinichi Takagi

Hiroaki Matsui

Shigeru Kitamura

Shunichi Hayamizu

Mitsuru Takenaka

Shinji Matsui

Yukio Nishiyama

Yasushi Hotta

Teruo Kanki

Toshio Kawahara

Naoki Asakawa

Kimihiko Kato

Yuji Muraoka

Takayuki Hasebe

Ken-ichiro Nakamatsu

Toshihito Ohtake

Ken-Ichiro Nakamatsu

A tunneling field effect transistor according to an embodiment of the present invention includes: a first semiconductor layer having a first conductive type; a second semiconductor layer having a second conductive type and realizing a heterojunction with respect to the first semiconductor layer in a first region; a gate insulating layer over the second semiconductor layer in the first region; a gate electrode layer over the gate insulating layer; a first electrode layer electrically connected to the first semiconductor layer; a second electrode layer electrically connected to the second semiconductor layer; and a first insulating layer interposed between the first semiconductor layer and the second semiconductor layer in a second region adjacent to the first region toward the second electrode layer.

Tunneling field effect transistor

A method for performing micro fabrication includes using, as a photomask, a self-organizing material-patterned substrate which is soluble in an organic solvent. A method for emitting light includes emitting the light in a pattern of a nucleic acid which is a self-organizing material immobilized on a self-organizing material-patterned substrate. An immobilization layer containing a binding material capable of binding to a self-organizing material is formed on a substrate. Then this immobilization layer is patterned by transferring a protrusion and recess pattern formed in a mold thereto by the imprint process. The self-organizing material is supplied onto the side having the protrusion and recess pattern of the immobilization layer transferred thereto. Thus, the self-organizing material is immobilized according to the protrusion and recess pattern of the immobilization layer owning to the self-organizing ability of the material per se and the binding ability of the binding material contained in the immobilization layer.

Method of patterning self-organizing material, patterned substrate of self-organizing material and method of producing the same, and photomask using patterned substrate of self-organizing material

The base plate is transmissive to terahertz waves, and a sample is disposed at the base plate. In the conductive periodic structure, plural transmission portions that transmit terahertz waves are arrayed with a predetermined period. The conductive periodic structure is disposed apart from a position at which the sample is disposed. The waveguide includes a total reflection surface provided at a boundary face with the conductive periodic structure. The total reflection surface totally reflects incident terahertz waves, and the waveguide guides incident terahertz waves toward the total reflection surface. The magnitudes of one or more of a distance between the position at which the sample is disposed and the conductive periodic structure, a property of the base plate, and the predetermined period are set such that a dip showing a characteristic absorption is formed in a predetermined frequency region of a spectrum of terahertz waves.

Terahertz wave measurement device and method

A method for immobilizing a self-organizing material or fine particles on a substrate, and a substrate whereupon the self-organizing material or the fine particles are immobilized. More specifically, the method for immobilizing the fine particles including a nucleic acid (for instance, DNA or RNA) or a metal oxide on the substrate, and the substrate whereupon the nucleic acid (for example, DNA or RNA) or the metal oxide is immobilized.

Method for immobilizing self-organizing material or fine particle on substrate, and substrate manufactured by using such method

Four stochastic resonators-to-outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator. When a signal output from each of the stochastic resonators-to-is successively transmitted in the stochastic resonators-to-coupled in a ring-like form, the output timings at each stochastic resonatorare synchronized with each other due to a cooperation phenomenon between the stochastic resonators-to-, so that each stochastic resonatoris self-excited to oscillate at a constant period of time.

Fluctuation oscillator, fluctuation oscillating system, observation device and control system

A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1&times;10 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE Fe TM O , where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn Co Fe O , where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.

Spinel ferrite thin film and method of manufacturing the same

A thin film having a good orientation and crystallinity. A method of producing the thin film on a substrate, wherein materials of a thin film are deposited and/or crystallized on a substrate. When a laser ablation method is adopted, the temperature of the glass substrate is set in the range between 200.degree. C. and 700.degree. C., and the pressure of O.sub.2 gas in a film forming chamber is set in the range between 7.times.10.sup.-5 Torr and 1.times.10.sup.-2 Torr. A laser beam irradiates a ZnO target. The target radiates materials of a thin film, such as neutral ions, molecules and ions, and the radiated materials are deposited and/or crystallized on the glass substrate to turn into a ZnO thin film.

Crystalline thin film and producing method thereof, and acoustooptic

There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition. There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Process for the production of dielectric thin films

There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam. There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Process for producing a perovskite film by irradiating a target of the

An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.

Pyroelectric IR sensor using an oxide superconductor upper electrode

There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.

Growing community of inventors

Tokyo, Japan

Hitoshi Tabata