Canon Kabushiki Kaisha

Cannon Kabushiki Kaisha

Hitoshi Shindo

Shinjiro Okada

Yutaka Inaba

Osamu Taniguchi

Hirofumi Shibata

Takeshi Ichikawa

Nobuhiko Sato

Masahiko Enari

Yasuhiro Sekine

Kazuaki Ohmi

Kyouhei Watanabe

Masaki Kurihara

Mitsutoshi Kuno

Masataka Ito

Akira Tsuboyama

Junichiro Kanbe

Kazuharu Katagiri

Akira Okita

Osamu Ikeda

Shuzo Kaneko

Tsutomu Toyono

Shigeyuki Matsumoto

Isamu Shimoda

Seishiro Yoshioka

Jun Nakayama

A method of fabricating a photomask used to form a lens. The method includes the steps of generating mask pattern data for each of a plurality of grid cells constituting a mask pattern for the lens, and fabricating the photomask based on the mask pattern data. The step of generating the mask pattern data includes acquiring data which represents a transmitted light distribution required for the photomask to fabricate the lens, in which the transmitted light distribution includes a quantity of transmitted light in each of the plurality of grid cells, and determining whether to place a shield on each of the plurality of grid cells by binarizing the quantity of transmitted light in each of the plurality of grid cells in order of increasing or decreasing distance from a center of the mask pattern using an error diffusion method.

Method of fabricating a photomask used to form a lens

A method of generating mask pattern data of a photomask used to form microlenses divides a pattern formation surface of a mask pattern to be used for the photomask into a plurality of grid cells, acquires data that represent a transmitted light distribution of the mask pattern to be used for the photomask, determines whether to place a shield on each of the plurality of grid cells by binarizing the plurality of grid cells in order of increasing or decreasing distance from a center of the pattern formation surface using an error diffusion method, to acquire the transmitted light distribution, and generates mask pattern data that represent an arrangement of the shields, based on the determination.

Mask pattern data generating method, information processing apparatus, photomask fabrication system, and image sensing apparatus

A process for producing an electronic device having a silicon nitride film on a substrate is provided which comprises steps of forming a silicon nitride film and a silicon oxide film on a first face and a second face reverse to the first face of the substrate respectively, removing the silicon oxide film on the first face by wet etching, removing the silicon nitride film on the first face by wet etching, and removing the silicon oxide film on the second face by wet etching.

Production of electronic device

A liquid crystal device comprising a pair of parallel base plates and a ferroelectric liquid crystal disposed between the base plates. One of the pair of parallel base plates is provided with a plurality of stepwise elevations disposed in the form of stripes, and has been implemented with a uniaxial orientation treatment in a direction parallel to the edges of the stepwise elevations. The stepwise elevation may be formed by a transparent electrode alone or in combination with an alignment control film disposed thereon. Because of the above features, alignment defects liable to develop from the edges of the elevations are removed.

LCD having a voltage being applied to the LC in the chiral nematic phase

LCD with stripe-shaped insulating projections covering gap entirely

A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode on a substrate by using a light-intercepting material; of forming a gate insulating film on the substrate including the gate electrode; of forming a semiconductor layer on the gate insulating film; and of forming a source region and a drain region by virtue of the fact that light, having a wavelength such that the light is absorbed into the semiconductor layer while not being absorbed into the substrate, is irradiated from the back of the substrate, before supplying impurities into the semiconductor layer.

Manufacturing method for semiconductor device

A semiconductor device comprises a semiconductor layer including a source region, a drain region and a channel region provided on an insulating film. A gate insulating film separates the semiconductor layer from a gate electrode. A thickness of the channel region is smaller than a thickness of the source or drain region, and a level of an interface between the channel region and the insulating film is different from a level of an interface of the source or drain region and the insulating film. All the surfaces of the channel region, source region and drain region which face the gate electrode are on the same level.

Semiconductor device and process for preparing the same

A method of forming a deposited semiconductor film, comprising the steps of using a target containing semiconductor material to be deposited, an inert gas containing hydrogen at 0.1 at % or more and sputtering energy of a high frequency of 50 MHz or higher, and employing a reactive sputtering method, wherein a sputter deposition process, in which a semiconductor film, the main component of which is the material to be deposited and the thickness of which is 10 nm or thinner, is formed on a substrate, and an irradiation process, in which a surface of the deposited film is irradiated with plasma in an atmosphere containing hydrogen, are alternately repeated, and a DC or high frequency bias voltage is applied to said target and/or said substrate.

Method of forming deposited semiconductor film

Liquid crystal device

This invention is to improve the assembling precision of an electronic device including a functional member, other than an electrode, requiring alignment, such as a light shield member or a spacer. Such functional member is composed of aluminum or a metal principally composed of aluminum, deposited by a CVD process utilizing alkylaluminum hydride gas.

Liquid crystal device and method for producing the same with metal

A process for forming an additive-containing Al film of good quality according to the CVD method utilizing an alkyl aluminum hydride, a gas containing an additive and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of additive-containing Al.

Process for forming metal deposited film containing aluminum as main

A driving system is disclosed, wherein a potential gradient is formed in a pixel and is utilized for driving. Particularly, there is disclosed an optical modulation apparatus, comprising: a first substrate having thereon a conductor film, and a plurality of transmission lines disposed electrically connected to the conductor film; a second substrate; an optical modulation material disposed between the first and second substrate; and means for supplying a pair of electric signals in mutually opposite transmission directions to neighboring transmission lines among the plurality of transmission lines.

Optical modulation apparatus using ferroelectric liquid crystal and

An optical modulation device includes: a first substrate having thereon a high-resistivity film having a sheet resistivity of 10.sup.3 .OMEGA./.quadrature. or above and a plurality of scanning electrode lines having a sheet resistivity of 10.sup.2 .OMEGA./.quadrature. or below and electrically connected to the high-resistivity film; a second substrate having thereon a plurality of data electrodes; and an optical modulation material disposed between the first and second substrates. At least one of the first and second substrates has thereon a pair of color filters of the same color disposed on both sides of at least one of the scanning electrode lines. The difference in height betwen the high-resistivity film and the scanning electrode lines is less than 1000 .ANG..

Optical modulation apparatus

A liquid crystal device comprising a first base plate which has projections thereon and has been subjected to a uniaxial orientation treatment, a second base plate disposed oppositely spaced from the first base plate with the projections therebetween as spacers, and a liquid crystal disposed between the first and second base plates. The projections have a section taken in parallel with the base plates, and the section has a side with a length of 0-20 .mu.m in a direction perpendicular to the uniaxial orientation treatment. The projections may be in the form of rectangular pillars, cylindrical pillars, oval pillars, or hexagonal pillars.

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Atsugi, Japan

Hitoshi Shindo