Sharp Kabushiki Kaisha Corporation

Hitoshi Sannomiya

Takashi Tomita

Katsuhiko Nomoto

Yukihiko Nakata

Shinsuke Tachibana

Yoshihiro Yamamoto

Manabu Itoh

Akitoshi Yokota

Takashi Ouchida

Yasumi Inoue

Sota Moriuchi

Sae Takagi

Shunpei Yamazaki

Yasuyuki Arai

Masaya Hijikigawa

Katsushi Kishimoto

Takanori Nakano

Hajime Saitoh

Hiromasa Tanamura

Minoru Murakami

Hiroshi Kumada

Disclosed is a light-emitting module wherein light entering into a solar cell is not attenuated, thereby preventing power output decrease of the solar cell. In addition, this light-emitting module can be produced by a simple process. Specifically disclosed is a light-emitting module wherein at least (a) a solar cell unit (b) a first adhesive layer, (c) a light-emitting unit composed of a second light-transmitting insulating substrate (transparent PET), a second metal layer (circuit pattern) and a light-emitting element (chip LED), (d) a second adhesive layer and (e) a third light-transmitting insulating substrate are sequentially stacked. The transparent PET having a thickness about 50-500 &#x3bc;m which is provided with the circuit pattern in advance is used for producing the light-emitting unit. A silver paste which can be cured by 30-minute heating at 150&#xb0; C. is used as a circuit pattern material, and the circuit pattern is formed on the transparent PET by screen printing, and then thermally cured.

Light-emitting module and light-emitting system

A solar battery cell of a serial stacked structure, increasing scattering of light, exhibiting good power-generating efficiency per unit area, and ensuring high reliability and a large yield in the manufacturing process, is provided. The solar battery cell includes a plurality of power-generating regions connected in series, each having insulative transparent semiconductor, front electrode, intermediate transparent conductive film, photoelectric conversion layer formed of stacked semiconductor films, and back electrode, and a contact line electrically connecting the front electrode and the back electrode of the neighboring respective power-generating regions. One power-generating region has at least two photoelectric conversion layers with the intermediate transparent conductive films sandwiched therebetween. At least one member of nonconductor and/or semiconductor is provided between the intermediate transparent conductive film and the contact line to prevent direct contact thereof.

Solar battery cell and manufacturing method thereof

A thin-film solar cell including a transparent electrode layer, a semiconductor photovoltaic conversion layer, a rear transparent electrode layer and a rear reflective metal layer, said layers being formed in this order on a transparent substrate, wherein the rear transparent electrode has a two-layer structure of an ITO or ZnO:Ga layer and a ZnO:Al layer formed in this order on the semiconductor photovoltaic conversion layer.

Thin-film solar cell and manufacture method therefor

In a solar battery module of the present invention, a transparent material is provided on the side opposite the light incident side of a solar cell portion formed on a transparent substrate. The solar battery module further includes a printed matter having a prescribed pattern between the solar cell portion and the transparent material. Thus, by integrating a printed matter having for example an illustration, picture, or character in the solar module, the printed matter can be visually recognized from the back or front side, whereby an appearance of the module can be improved.

Solar battery module

A photovoltaic device have a pin junction of a p-layer, an i-layer and an n-layer, wherein the p-layer includes a first p-layer and a second p-layer thereover, the first p-layer having a thickness of 5 nm or less and being uniformly doped with a p-type impurity, and the second p-layer being formed by decomposition of a gas which does not positively incorporate a p-type impurity.

Photovoltaic device and process for producing the same

A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

Method for forming a thin semiconductor film and a plasma CVD apparatus

A substrate for a solar cell has a first surface with minute unevenness formed by spraying abrasive grains with a count of #2000 or higher, on which a layered structure for photoelectric transfer is to be formed, wherein the unevenness on the first surface of the substrate has a difference in height between convex portions and concave portions of around 0.1 to 0.5 .mu.m.

Substrate for solar cell and method for producing the same; substrate

In a method for fabricating a solar cell, an amorphous silicon film of a first conductivity type is formed on a substrate, and nickel silicide is formed thereon. The amorphous silicon film is crystallized through heat treatment to obtain a crystalline silicon film of the first conductivity type. Residual nickel silicide on the surface of the crystalline silicon film of the first conductivity type is removed. Another crystalline silicon film of a second conductivity type is further formed on the surface of the crystalline silicon film of the first conductivity type.

Solar cell and method for fabricating the same

A photovoltaic device includes a semi-continuous metal layer having an uneven surface, which is not uniform, formed on a substrate, a reflective continuous metal layer having a substantially uniform thickness formed to cover the semi-continuous metal layer, a semiconductor film for photoelectric conversion formed on the reflective continuous metal layer, and a transparent electrode formed on the semiconductor film.

Photovoltaic device with porous metal layer

An amorphous semiconductor solar cell includes an i type layer which is an at least partially alloyed, substantially intrinsic semiconductor, an n type layer formed on one side of the i type layer, and a p type layer formed n the other side of the i type layer, and the i type layer has its energy bandgap varied in a thickness direction to have a bandgap larger than the bandgap of the p type layer in the vicinity of the interface with the p type layer.

Amorphous semiconductor solar cell

An amorphous semiconductor device comprising a layered structure having a p-amorphous silicon layer, an i-amorphous silicon layer, an n-amorphous silicon layer, an i-amorphous silicon layer and a p-amorphous silicon layer, or an n-amorphous silicon layer, an i-amorphous silicon layer, a p-amorphous silicon layer, an i-amorphous silicon layer and an n-amorphous silicon layer, in sequence, on a substrate, electrodes being disposed on the top layer, the central layer and the bottom layer, respectively.

Growing community of inventors

Osaka, Japan

Hitoshi Sannomiya