Panasonic Intellectual Property Management Co., Ltd.

Sanyo Electric Co., Ltd.

Hitoshi Sakata

Daisuke Ide

Toshio Asaumi

Masato Shigematsu

Takahiro Mishima

Isao Hasegawa

Yuji Hishida

Mitsuaki Morigami

Hiroyuki Mori

Ryo Goto

Tsuyoshi Takahama

Toshiaki Baba

Satoru Shimada

Hironobu Tsujimoto

Yasuo Kadonaga

Hiroryuki Mori

An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.

Solar cell and method of manufacturing the same

A first solar cell is electrically connected to a second solar cell electrically and arranged in an array direction. Each of the first and second solar cell comprises: a light-receiving surface; a rear surface; a plurality of n-type side electrodes and p-type side electrodes both formed in the array direction on the rear surface; a wiring member electrically connecting the first solar cell and the second solar cell and arranged over the plurality of n-type side electrodes and the plurality of p-type side electrodes; an n-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of n-type side electrodes, the part facing the wiring member; and a p-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of p-type side electrodes, the part facing the wiring member.

Solar cell module

There is provided a photovoltaic device () having a substrate (), i-type amorphous layers () formed over a region of at least a part of a back surface of the substrate, and an i-type amorphous layer () formed over a region of at least a part of a light-receiving surface of the substrate (); and characterized in that electrodes () are provided on the back surface and no electrode is provided on the light-receiving surface, and an electrical resistance per unit area of the back surface side i-type amorphous layers is lower than an electrical resistance per unit area of the light-receiving surface side i-type amorphous layer.

Photoelectric conversion device and method for producing photoelectric conversion device

Provided is a solar cell having improved photoelectric conversion efficiency. The solar cell () contains: a substrate () comprising a semiconductor material having one type of conductivity; a first semiconductor layer () having the one type of conductivity; and a second semiconductor layer () having the one type of conductivity. The first semiconductor layer () is arranged on one main surface of the substrate (). The second semiconductor layer () is arranged on the other main surface of the substrate (). The solar cell () is configured such that the strength of the electric field formed by the second semiconductor layer () is greater than the strength of the electric field formed by the first semiconductor layer ().

Solar cell

This photoelectric conversion device () is provided with: an n-type monocrystalline silicon substrate (); an IN layer () and an IP layer () formed on the back surface of the n-type monocrystalline silicon substrate (); an n-side electrode () containing an n-side underlayer (), an n-side primary conductive layer (), and an n-side protective layer (); and a p-side electrode () containing a p-side underlayer (), a p-side primary conductive layer (), and a p-side protective layer (). The n-side primary conductive layer () is formed in a manner so as not to cover the lateral surface of the n-side underlayer (), and is covered at the lateral surface by the n-side protective layer (). The p-side electrode () is formed in such a manner the lateral surface of the p-side underlayer () is not covered, and the lateral surface is covered by the p-side protective layer ().

Photoelectric conversion device and method for producing same

A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

Solar cell and method for manufacturing solar cell

A solar cell modulecomprises a light reflection memberplaced on the light receiving surface of a n-type semiconductor substrateand having a light reflecting surfaceA facing the light receiving surface protection member. The light reflection memberis positioned on an opposite side to the n-side connecting electrodeacross the n-type semiconductor substrate

Solar cell module, solar cell and solar cell module manufacturing method

In this method for producing a photoelectric conversion device: an i-type non-crystalline layer and an n-type non-crystalline layer comprising a non-crystalline semiconductor film are formed on the light-receiving surface of a semiconductor substrate; an i-type non-crystalline layer and an n-type non-crystalline layer comprising a non-crystalline semiconductor film are formed on the back surface of the semiconductor substrate; a protective layer is formed on the n-type non-crystalline layer; an insulating layer is formed on the n-type non-crystalline layer; and in the state where the top of the n-type non-crystalline layer is covered by the protective layer, patterning is performed by eliminating a portion of the i-type non-crystalline layer, the n-type non-crystalline layer, and the insulating layer.

A solar cell, wherein contamination with an undesired impurity is suppressed, and solar cell characteristics are excellent. This solar cell is provided with: a semiconductor substrate having a photoreceiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of the semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of the semiconductor substrate and the surface of the first semiconductor layer; and a cap layer formed between the first semiconductor layer and the second semiconductor layer, and containing no impurity of the first conductivity type.

This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode is formed on the p-type amorphous semiconductor thin film.

Semiconductor device and manufacturing method thereof

A photovoltaic element includes a collecting electrode formed via a transparent conductive film on a semiconductive layer having a semiconductor junction, wherein a conductive film is disposed on the collecting electrode. A modular structure is adopted in which a plurality of photovoltaic elements having such a structure are connected in series via a tab soldered onto the conductive film. On a light-transmission side, a conductive film is disposed to cover an entire surface of the transparent conductive film. This conductive film is allowed to act as a reflection film on a back surface side. A screen printing process is repeated for a plural number of times so that the collecting electrode is formed with a flattened surface.

Growing community of inventors

Higashiosaka, Japan

Hitoshi Sakata