Canon Anelva Corporation

Mitsubishi Heavy Industries Limited

Nidec Tosok Corporation

Sony Corporation

Other

Huawei Technologies Co., Limited

Sony United Kingdom Limited

Kabushiki Kaisha Watanabe Shoko

Phyzchemix Corporation

Hitoshi Sakamoto

Naoki Yahata

Toshihiko Nishimori

Yoshiyuki Ooba

Ryuichi Matsuda

Yoshiyuki Kobayashi

Ikumasa Koshiro

Hiroshi Tonegawa

Yuzuru Ogura

Noriaki Ueda

Toshiaki Kojima

Tomohiro Sakata

Takashi Sugino

Chisato Sekiguchi

James Hedley Wilkinson

Katsumi Tahara

Yoshihiro Murakami

Yasuo Iwasaki

Koji Higuchi

Hiroshi Nakano

Saneyuki Goya

Tetsuya Iwamoto

Masahiko Inoue

Kazuto Yoshida

Tatsuo Abe

Kunihiro Kajita

Chao Wang

Hirotaka Kanamono

Tomokazu Ikeda

Takao Abe

A cooling apparatus is provided, including a jet plate and a carrier plate provided with an accommodating groove, a coolant inlet, and a coolant outlet. The jet plate is in the accommodating groove, with nozzles provided on the jet plate in a protruding manner. A distribution cavity is between the jet plate and the carrier plate, and the distribution cavity communicates with the coolant inlet, which is for injection of cooling liquid. A collection cavity for backflow of the cooling liquid is formed in the accommodating groove, and is separated from the distribution cavity. The coolant outlet communicates with the collection cavity. The cooling liquid is distributed to the jet plate through the distribution cavity, and is sprayed to the collection cavity through the nozzles for heat exchange, and the cooling liquid obtained through heat exchange is converged in the collection cavity and flows out through the coolant outlet.

Cooling apparatus and electronic device

A heat-treating furnace has: a rotary shaft; a rotary bottom surface pivotally supported by the rotary shaft and rotates; a plurality of workpiece storage chambers arranged on the rotary bottom surface in a multi-stage torus configuration around an axis of the rotary shaft as a center; a hollow bell-shaped hot-blast guide disposed in a center of the torus configuration on the rotary bottom surface around the axis of the rotary shaft as a center so as to decrease a volumetric capacity in the furnace and to adjust a quantity of a hot blast fed in from above itself into the workpiece storage chamber on each stage; a furnace body bottom surface spaced away from the rotary bottom surface; and a furnace body lateral surface disposed on the furnace body bottom surface.

Heat-treating furnace

An electric pump device includes a motor having a rotor and a stator portions, a pump portion and a housing. The stator portion has a stator core, and coils each having a winding portion and a crossover portion. The housing has a housing body portion having a tubular shape and extending in the axial direction, and a flange portion expanding radially outward from the outer peripheral surface of the housing body portion. The flange portion has an end surface that faces toward one side in the axial direction and is disposed in the axial direction between a first and a second virtual plane. The first and the second virtual planes pass through parts of the stator core, the winding portion, and the crossover portion located respectively closest to one and the other sides in the axial direction and expanding in a direction perpendicular to a central axis.

Electric pump device and attachment structure of electric pump device

An electric pump device is provided. The electric pump device includes a motor, an inverter substrate electrically connected to the motor, a housing for housing the motor and the inverter substrate, and a pump portion driven by power of the motor. The housing includes a motor housing portion for housing the motor and an inverter housing portion for housing the inverter substrate. The motor housing portion has strut portions which extend inside the inverter housing portion and fixed to the inverter substrate.

Electric pump device

A motor, an inverter substrate electrically connected to the motor, a housing accommodating the motor and the inverter substrate, and a pump section driven by the motor are included. The inverter substrate is disposed on one side of the motor. The pump section is disposed on the other side of the motor. The housing has a motor housing section accommodating the motor, an inverter housing section accommodating the inverter substrate, and a breather section establishing communication between inside and outside of the housing. The motor housing section has an accommodation tubular section accommodating the motor and a brim section spreading outward in a radial direction from an end of the accommodation tubular section. The inverter housing section is disposed on one side of the brim section and overlaps the brim section when seen in the axial direction. The breather section is disposed at the brim section.

An inverter substrate has a plurality of heat generating elements mounted thereon and disposed at intervals from each other. A housing has an inverter housing section that accommodates the inverter substrate. The inverter housing section has a first member that faces one plate surface of a pair of plate surfaces of the inverter substrate, a second member that faces the other plate surface of the pair of plate surfaces, and a plurality of heat conductive sheets that are disposed between the first member or the second member and the inverter substrate and are brought into contact with the first member or the second member and the inverter substrate. The heat conductive sheets are thermally connected to the heat generating elements. The heat conductive sheets are individually disposed at positions at which the heat conductive sheets overlap the plurality of heat generating elements in a plan view of the inverter substrate.

A Clgas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Clgas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

In a metal film production apparatus, a copper plate member is etched with a Clgas plasma within a chamber to form a precursor comprising a Cu component and a Clgas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Clgas, and the Cl* is supplied into the chamber to withdraw a Clgas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Method and apparatus for production of metal film or the like

A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a memberto be etched, which is disposed within a chamberand is formed of a material containing an element capable of forming a compound with Si, while keeping the memberat a relatively high temperature, to form a gas of a precursor, which is a compound of the material and the halogen; holding a substrateaccommodated within the chamberat a relatively low temperature, with the Si interface of the substratebeing exposed, to adsorb the precursoronto the Si interface of the substrate; and then allowing the radical of the halogen gas to act on the precursoradsorbed onto the Si interface to reduce the precursor, thereby producing a compound of the material and Si.

Process for producing silicon compound

Barrier metal film production method

A source gas is supplied into a chamber through a nozzle, and electromagnetic waves are thrown from a plasma antenna into the chamber. The resulting Clgas plasma causes an etching reaction to a plurality of copper protrusions, which are arranged between a substrate and a ceiling member in a discontinuous state relative to the flowing direction of electricity in the plasma antenna, to form a precursor (CuCl). The precursor (CuCl) transported toward the substrate controlled to a lower temperature than the temperature of an etched member is converted into only Cu ions by a reduction reaction, and directed at the substrate to form a thin Cu film on the surface of the substrate. The speed of film formation is fast, the cost is markedly decreased, and the resulting thin Cu film is of high quality.

Metal film production apparatus

A plasmais generated within a film formation chamber, and mainly a nitrogen gasis excited within the film formation chamber. Then, the excited nitrogen gasis mixed with a diborane gasdiluted with a hydrogen gas to react them, thereby forming a boron nitride filmon a substrate. At the initial stage of film formation, the nitrogen gasis supplied in excess to suppress the occurrence of an amorphous phase on the interface. As a result, the boron nitride filmimproved in moisture absorption resistance on the interface with the substrate and maintaining low dielectric constant properties is formed.

Film forming method and film forming device

An electrode pattern of an electrostatic chuck includes linear portions in a radial direction and a plurality of concentric C-shaped portions branching out from the linear portions. The linear portions are disposed opposite to each other in a diametrical direction and are such that they lie on a line that is almost straight. The C-shaped portions are engaged alternately like teeth of a comb.

Electrostatic chuck and its manufacturing method

Interconnection structure

Growing community of inventors

Yokohama, Japan

Hitoshi Sakamoto