Tdk Corporation

Maeda & Suzuki Patent Co., Ltd.

Hitoshi Saita

Kenji Horino

Masahiro Hiraoka

Yoshihiko Yano

Masamitsu Haemori

Kazuhiro Yoshikawa

Tatsuo Namikawa

Yuuki Aburakawa

Hiroshi Takasaki

Toshio Asahi

Masahito Furukawa

Yasunobu Oikawa

Kiyoshi Uchida

Kenichi Yoshida

Naoyoshi Sato

Shinichiro Kakei

Suguru Andoh

Akiyasu Iioka

Hiroyasu Inoue

Hiroki Uchiyama

Tomofumi Kuroda

Akira Shibue

Saori Takahashi

Wakiko Sato

Atsuo Matsutani

Masahiro Yamaki

Ryo Yokoyama

Shigeaki Tanaka

Yasushi Enokido

Yuki Miyamoto

Mitsuhiro Tomikawa

Naoto Tsukamoto

Yuko Saya

Shigeo Okamoto

Michihiro Kumagae

Yukihiro Azuma

Kuniji Koike

Eri Aizawa

A dielectric device includes a first electrode, dielectric film, and second electrode, which are laminated. The dielectric film includes columnar crystals extending in a lamination direction. Provided that 'x' denotes a reciprocal (1/μm) of a dielectric film thickness and “y” denotes a dielectric material average crystallite size (nm) calculated by the Scherrer equation, “x” and “y” are located within a quadrilateral having point A (0.10, 5), point B (10, 20), point C (10, 35), and point D (0.10, 10) as vertices. Alternatively, the columnar crystals have an average width of less than 40 nm within a distance range from one tenth to one third of the dielectric film thickness from one electrode to the other and an average width of 40 nm or more within a distance range from one tenth to one third of the dielectric film thickness from the other electrode to the one in the lamination direction.

Dielectric device

Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.

Thin film capacitor and manufacturing method therefor

Disclosed herein is a capacitor component that includes a lower electrode, a capacitive insulating film covering the lower electrode, a plurality of upper electrodes overlapping the lower electrode through the capacitive insulating film, a first external terminal connected to the lower electrode, a plurality of fuse wires connected respectively to the plurality of upper electrodes, and a second external terminal connected in common to the plurality of fuse wires. The resistance values of the plurality of respective fuse wires are higher than the resistance values of the plurality of corresponding upper electrodes.

Capacitor component

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

Thin film capacitor having a dielectric layer having a through hole whose inner surface has first and second tapered surfaces, circuit board incorporating the same, and thin film capacitor manufacturing method

A dielectric film includes a main component of a complex oxide represented by a general formula of (SrCa)TiO. 0.40&#x2264;x&#x2264;0.90 and 0.90&#x2264;y&#x2264;1.10 are satisfied. A ratio of a diffraction peak intensity on (1, 1, 2) plane of the complex oxide to a diffraction peak intensity on (0, 0, 4) plane of the complex oxide in an X-ray diffraction chart of the dielectric film is 3.00 or more. Instead, a ratio of an intensity of a diffraction peak appearing at a diffraction angle 2&#x3b8; of 32&#xb0; or more and 34&#xb0; or less to an intensity of a diffraction peak appearing at a diffraction angle 2&#x3b8; of 46&#xb0; or more and 48&#xb0; or less in an X-ray diffraction chart of the dielectric film obtained by an X-ray diffraction measurement with Cu-K&#x3b1; ray as an X-ray source is 3.00 or more.

Dielectric film, dielectric element, and electronic circuit board

Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film and including a plurality of capacitor areas divided by a slit and a plurality of fuse areas connecting two of adjacent capacitor areas. The second capacitive electrode has a structure in which a plurality of conductor films including a first conductor film and a second conductor film lower in electrical resistivity than the first conductor film are laminated.

Thin film capacitor

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.

Thin film capacitor, circuit board incorporating the same, and thin film capacitor manufacturing method

The present invention provides a dielectric composition having high relative permittivity and insulation resistance at high temperature. The dielectric composition includes a main component expressed by a compositional formula (Sr, Ca)(TiHf)ON, in which 0&#x3c;x&#x2264;0.15, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, and 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

Dielectric composition, dielectric thin film, dielectric element, and electronic circuit board

To provide a dielectric composition having excellent reliability. The dielectric composition contains a main component represented by a composition formula (SrCa)(TiHf)ON, in which 0.15&#x3c;x&#x2264;0.90, 0&#x3c;y&#x2264;0.15, 0.90&#x2264;m&#x2264;1.15, 0&#x3c;&#x3b4;&#x2264;0.05 are satisfied.

A dielectric film may be exposed to an acid solution such as hydrochloric acid, nitric acid, or sulfuric acid during a wet process after film formation. The inventors have newly found that when a dielectric film includes Zr having a lower ionization tendency than Ti in a main component of a metal oxide expressed by a general formula (Ba, Ca)(Ti, Zr)Ois provided and satisfies at least one between relationships such that degree of orientation of (100) plane is higher than degree of orientation of (110) plane, and degree of orientation of (111) plane is higher than degree of orientation of (110) plane in a film thickness direction, the dielectric film is less likely to be damaged during a wet process, and the resistance to a wet process is improved.

A dielectric thin film contains Ca, Sr, Ti, Hf, O and N, wherein among crystal grains existing in a plane field of view of 1 &#x3bc;m square perpendicular to a film thickness direction of the dielectric thin film, a number ratio of crystal grains having a grain size of 19 nm or more and less than 140 nm is 95% or more, among the crystal grains existing in the plane field of view, a number ratio of first crystal grains having a grain size of 65 nm or more and less than 77 nm is 20% or more, and among the crystal grains existing in the plane field of view, a number ratio of second crystal grains having a grain size of 19 nm or more and less than 54 nm is 40% or less.

Dielectric thin film, dielectric element and electronic circuit board

A thin film capacitor comprises a first electrode, a second electrode, and a dielectric substance disposed between the first electrodeand the second electrode. The second electrode has a first metallic layer, an intermediate layer, and a second metallic layer in sequence in this order from the side of the dielectric substance. The first metallic layer contains a metal element Mas a main component, and the second metallic layer contains a metal element Mdifferent from the metal element Mas a main component. The intermediate layer has one or more laminate structures each having a second metal sublayer containing the metal element Mas a main component and a first metal sublayer containing the metal element Mas a main component in sequence from the side of the first metallic layer toward the side of the second metallic layer.

Thin film capacitor, and method of producing thin film capacitor

Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.

A thin film capacitor is provided with a lower electrode made of a metal foil containing many metal grains, a dielectric thin film formed on an upper surface of the lower electrode, and an upper electrode formed on an upper surface of the dielectric thin film. A lower surface of the lower electrode is an etched surface from which cross sections of the metal grains appear. The height difference between the cross sections of adjacent metal grains in the etched surface is 1 &#x3bc;m or more and 8 &#x3bc;m or less.

Thin film capacitor, manufacturing method therefor, and substrate with built-in electronic component

Disclosed herein is a thin film capacitor that includes a capacitive insulating film, a first metal film formed on one surface of the capacitive insulating film, and a second metal film formed on other surface of the capacitive insulating film and made of a metal material different from that of the first metal film. The thin film capacitor has an opening penetrating the capacitive insulating film, first metal film, and second metal film. The second metal film is thicker than the first metal film. A first size of a part of the opening that penetrates the first metal film is larger than a second size of a part of the opening that penetrates the second metal film.

Growing community of inventors

Tokyo, Japan

Hitoshi Saita