Fujitsu Corporation

Hitoshi Omichi

Tetsu Tanizawa

Yoshiharu Mitono

A semiconductor integrated circuit including at least one conventional inner cell region and an outer cell region. The outer cell region comprising a plurality of outer cells. Each outer cell is comprised of circuit elements for achieving a predetermined logic function, in addition to circuit elements for achieving the conventional buffer function of an outer cell. Further, two or more adjacent outer cells are connected each other and act as an independent circuit so as to form a macro-cell.

Gate array semiconductor integrated circuit

In a semiconductor device having a gate array structure, a macro-cell includes more basic cells than conventional macro-cells, for preforming a logic function, whereby the density of the terminals in a direction vertical to a direction in which wiring lines are drawn, is decreased.

Semiconductor gate array device having an improved interconnection

An integrated circuit device such as a gate array or a master slice LSI device which is formed on a semiconductor chip and which comprises an inner cell array including a plurality of inner cells, an outer cell array including a plurality of outer cells formed around the inner cell array, a power supply portion having one or more outer power supply lines, and a plurality of inner power supply lines connected to the outer power supply lines and formed on the inner cell array. The ratio of the pitch length of the outer cells to the pitch length of the inner power supply lines or the inner cells is determined by the ratio of two integers. In the integrated circuit device, at least one set of an outer cell, and an inner cell which are arranged in a predetermined positional relation, is formed a plurality of times along a side of the semiconductor chip.

Integrated circuit having predetermined outer to inner cell pitch ratio

In an integrated circuit manufactured by the master slice method, the feeder line for supplying electric power to a unit-cell array is gradually narrowed in width from the periphery to the middle of the array. As a result, sufficient voltage is supplied to the unit-cells at the middle of the IC and an area of an interconnecting domain for connecting the unit-cells is expanded.

Growing community of inventors

Kawasaki, Japan

Hitoshi Omichi