Hitachi, Ltd.

Tdk Corporation

Other

Kokusai Electric Co., Ltd.

Hitachi-kokusai Electric Inc.

Hitachi Computer Electronics

Hitoshi Oka

Hiroshi Kikuchi

Isamu Tanaka

Hitoshi Yokono

Fumio Morita

Masataka Fujiki

Masakazu Hirose

Tokio Isogai

Takashi Inoue

Mitsuo Nakatani

Takeo Tsukada

Yoichi Takahara

Osamu Miyazawa

Akira Tomizawa

Makio Watanabe

Akira Matsuo

Shinichiro Imabayashi

Yuichirou Tanaka

Akinobu Yamaoka

Fusaji Shoji

Noriyuki Oroku

Fumio Kataoka

Hideo Arima

Haruhiko Matsuyama

Toshiyuki Koshita

Yasushi Sano

Kenji Nakamura

Michio Tsukii

Akio Saito

Nobuo Nakagawa

Naoya Kitamura

Hideyasu Murooka

Kazuo Miyabe

Satoru Todoroki

Masayuki Kyooi

Junji Terauchi

Masato Kikuchi

Toshiyuki Suzuki

Takao Satoh

Yasuo Watanabe

Kenji Horino

Koji Suzuki

Susumu Aiuchi

Kazushi Tachimoto

Yasuharu Miyauchi

Taeko Tsubokura

Takayoshi Watanabe

Hiroaki Okudaira

Haruo Suzuki

Haruo Itoh

Toyofusa Yoshimura

Tomonori Saeki

Katsuhiro Ota

Masayoshi Inoue

Hideki Sakurai

Yoshio Gobara

Noriyuki Ohroku

Shigeru Fujita

Yoshinori Asakura

Mahoko Takada

Yukihiro Taniguti

Reiko Yano

Yukihiro Taniguchi

Seizi Shigemura

Motokazu Shindo

Masako Fujisawa

Piezoelectric ceramics include a bismuth layer compound containing M , Bi, Ti, Ln and O, wherein M represents at least one element selected from the group consisting of Sr, Ba and Ca, and Ln represents at least one element selected from the group consisting of lanthanoids. The piezoelectric ceramics include M Bi Ti O typed crystals, and a mole ratio of Ln/(Ln&plus;M ) is 0<Ln/(Ln&plus;M )<0.5. In the case where M is Sr, a mole ratio of 4Bi/Ti is 4.000<4Bi/Ti&lE;4.030. Preferably, piezoelectric ceramics further include Y oxide.

Piezoelectric ceramics

At a time of cleaning a plate-like part such as a wafer or the like while rotating, for the purpose of reducing a contamination, a damage and an unevenness of process of the plate-like part which are caused by an amount of charged electricity of the plate-like part, chuck pins (chuck members) which chuck the plate-like part such as the wafer or the like and upper and lower cleaning plates and which oppose to the plate-like part are constituted by a resin material containing carbon powders, and a desired potential difference is applied to a portion between the plate-like part and the cleaning plates by a voltage control unit which is provided in an outer portion.

Cleaning apparatus for plate-like part and method thereof

A piezoelectric ceramic material comprising a bismuth layer compound containing M , Bi, Ti and O wherein M is selected from Sr, Ba and Ca, and containing M Bi Ti O type crystals, wherein M , is represented by Sr Ba Ca wherein x&plus;y&plus;z&equals;1, utilizes thickness shear vibration when 0&lE;x&lE; 1, 0&lE;y&lE;0.9, and 0&lE;z&lE;1, and thickness extensional vibration when 0&lE;x<0.9, 0&lE;y&lE;0.9, and 0&lE;z<1. Also provided is a piezoelectric ceramic material comprising a bismuth layer compound containing Ca, Bi, Ti, Ln and 0 wherein Ln is a lanthanoid, and containing CaBi Ti O type crystals, wherein the atomic ratio Ln/(Ln&plus;Ca) is in the range: 0<Ln/(Ln&plus;Ca)<0.5. These piezoelectric ceramic materials are free of lead, and have a high Curie point and improved piezoelectric characteristics.

Piezoelectric ceramic material

The fluid treatment apparatus, as disclosed, comprises upper and lower Bernoulli-plates and each of which includes a metal plate provided on overall outer surface thereof. On each of the metal plates there is arranged a spiral-shaped circulating pipe through which a heating medium or a cooling medium are circulated so as to rapidly heat or cool the upper and lower Bernoulli-plates. During the treatment of a wafer by the apparatus, the upper and lower Bernoulli-plates are disposed in parallel with each other to define a narrow gap therebetween while a clearance between the wafer and the upper Bernoulli-plate and a clearance between the wafer and the lower Bernoulli-plate are kept to be equal to each other. Thus, the present invention can achieve various purpose such as a time saving for the cleaning, reduction of consumption of the cleaning liquid and inhibition of cleaning irregularity.

Plate-like specimen fluid-treating apparatus and plate-like specimen fluid-treating method

To carry out very clean and low-cost fluid processing on both the front and rear surfaces of an object to be processed without generating rubbing particles and without leakage of fluid. A retention member for the object to be processed that retains the object to be processed and a rear shielding plate that prevents the rear surface of the object to be processed from becoming contaminated by excessive fluid flow are mechanically separated. The rear shielding plate is fixed in like manner to a front shielding plate , only the retention member for the object to be processed is allowed to rotate making it possible to rigidly connect a supply pipe (that supplies fluid through the rear shielding plate ) to the rear shielding plate . Further, a circulation system is provided that collects fluid which underwent front surface processing in a collection tube , circulates that fluid and then supplies it to the rear surface of the object to be processed from a supply pipe.

Fluid processing apparatus

A substrate treating apparatus and method can recover a substrate treating liquid such as a cleaning liquid in an efficient manner and positively avoid occurrences of treatment defects such as formation of cleaning spots, water marks and the like. A fixed upper plate and a fixed lower plate are disposed in opposition to each other so as to define a space therebetween. A substrate such as a semiconductor wafer is inserted into the space between the fixed upper and lower plates, supported there by a support and adapted to be rotated through rotation of the support. A substrate treating medium such as a cleaning liquid is introduced into the space to treat the substrate while the substrate is rotating. The treating medium after having treated the substrate is discharged from the space through a discharge passage which is defined between an outer peripheral surface of the support and an inner surface of a housing which covers the outer peripheral surface of the support. Rotary blades are disposed in the discharge passage and adapted to rotate in accordance with the rotation of the substrate, thereby enhancing discharging of the substrate treating medium from the space through the discharge passage.

Substrate treating apparatus

A piezoelectric ceramic is a bismuth-layer compound having SrBi Ti O -type crystal. The axial ratio c/a of crystal lattice is in the range of 7.46 to 7.67.

Piezoelectric ceramic

A clean, recirculating and processing method which prevents surface contamination of an object, such as a semiconductor, semi-conductor wafer, glass for LCD or magnetic disk is provided which includes covering the front and rear surfaces of an object to be processed with front and rear shielding plates and allows the object to rotate relative to the front and rear shielding plates. The fluid is supplied between the front surface of the object and the front shielding plate allowing the front surface to be processed. The remaining fluid is collected and recirculated between the rear surface of the object and the rear shielding plate allowing the rear surface of the object to be processed. An apparatus for accomplishing the method is also disclosed.

Clean, recirculating processing method which prevents surface contamination of an object

Piezoelectric ceramics which is made of compounds shaped in bismuth layer containing Sr, Bi, Ti and Ln (lanthanoid). The compound contains SrBi,Ti,O,typed crystals. In the piezoelectric ceramics, an atomic ratio of Ln/(Sr&plus;Ln) is 0<Ln/(Sr&plus;Ln)<0.5.

The object of the present invention is to realize the piezoelectric ceramics which, even when used as high frequency elements utilizing third harmonics wave of thickness longitudinal vibration, are small in temperature coefficient of resonant frequency and high in mechanical Q value and easy to correspond to the trend toward miniaturization and low voltage driving. When the piezoelectric ceramics with lead titanate as its main component are manufactured in order to achieve this object, it was decided that the piezoelectric ceramics be manufactured by the manufacturing method, wherein a heat treatment is performed between a firing process and a polarization process in the atmosphere of oxygen partial pressure less than the oxygen partial pressure of the atmospheric pressure at temperatures more than 500.degree. C. and not more than the firing temperatures.

Method of preparation of piezoelectric ceramics

Provided is a piezoelectric ceramic which achieves a high density, good temperature characteristics and a high Curie temperature, which can fully prevent (a) a decrease in Qmax (Qmax refers to a tan.theta.max when the maximum value of phase angles of third harmonic is a .theta.max), (b) a decrease in q (dynamic range of resonance frequency), (c) an increase in a fundamental wave and (d) the occurrence of a spurious mode in the vicinity of third harmonic, caused by downsizing, and which can materialize a small-sized high-performance piezoelectric element, the piezoelectric ceramic having a composition of the general formula,

A highly clean fluid treatment system having a small system volume is provided by using a Bernoulli holder to accomplish stable holding of a specimen in a simple configuration. A holder having a specimen hold face formed almost the same as a specimen or having a Bernoulli effect producing region and a region surrounding the Bernoulli region made of a specific combination of materials is used and fluid supply sources are connected to the holder for supplying one or more fluids containing a treatment agent of a specimen. Since a force for inhibiting a position shift occurs on the end face of the specimen 10, stable specimen holding is enabled. The space between the specimen and the holder where treatment is executed is narrow and fluid always flows from the treatment space to the outside. Therefore, the fluid treatment system of a small volume producing high treatment efficiency and minimizing the chances of recontamination of the specimen can be provided.

Specimen holding method and fluid treatment method of specimen surface

A liquid crystal display device is produced by effecting in the course of its production steps a resist-peeling method including the steps of (a) changing the quality of a resist layer on a substrate, (b) contacting the changed resist with a liquid containing 2-amino-1-ethanol, and (c) removing the liquid containing the thus peeled resist from the surface of the etched resist, and optionally, (d) regenerating a liquid containing 2-amino-1-ethanol by distillation from the liquid used in step (c) and reusing the regenerated liquid in step (b).

Process for stripping photoresist while producing liquid crystal display

A method of controlling the adhesion of fine particles to an object in a solution characterized in that the adhesion of fine particles in the solution is prevented or reduced by adding into the solution a material, which is capable of controlling the zeta potential (surface potential) of the fine particles, in the amount of 10.sup.-7 to 25% by volume.

Method of controlling adhesion of fine particles to an object in liquid

A resist is peeled without leaving a residue after peeling, by bringing a resist-peeling liquid comprising a primary aliphatic amine of 2-6 carbon atoms into contact with the surface of an etched novolak positive photoresist, and removing the resist-peeling liquid containing the thus peeled resist from the surface of the etched resist. The used resist-peeling liquid can easily be recovered and regenerated.

Resist-peeling liquid and process for peeling a resist using the same

Growing community of inventors

Tokyo, Japan

Hitoshi Oka