Lintec Corporation

Other

Hitoshi Ohashi

Kazuhiro Takahashi

Koichi Nagamoto

Hideo Senoo

Katsuhiko Horigome

Yoji Wakayama

Tatsuya Izumi

Naofumi Izumi

An adhesive sheet having a substrate and an adhesive layer laminated on one or both surfaces of the substrate, and which has an anti-static performance, is described. At least one of the adhesive layers contains an adhesive and a compound (1) represented by the following formula (1), and contains the compound (1) in an amount of from 0.1 to 100 parts by mass on the basis of 100 parts by mass of the adhesive. In the formula, Ris a (meth)acryloyl group; Ris a Calkylene group; and n is an integer of from 1 to 20, such as 4 to 16.

Adhesive sheet

An object of the present invention is to provide a treating method for brittle member capable of stably holding the brittle member when applying predetermined treatments such as transportation and grinding back surface of a brittle member such as a semi-conductor wafer and separating the brittle member without breakage after finishing required treatment to thereby attaining high thickness accuracy of the brittle member. A treating method for brittle member comprising: a step of removably fixing a brittle member on a flexible glass base plate, a step of treating said brittle member, a step of fixing said brittle member side by holding means, and a step of separating said flexible glass base plate from said brittle member by bending said flexible glass base plate.

Treating method for brittle member

It is an object of the present invention to provide a surface protective sheet and a method for grinding a semiconductor wafer, by the use of which any dimple is not formed, nor occurs breakage and fouling of a wafer even when a wafer having high bumps which are highly densely arranged is ground to an extremely small thickness, and besides, no adhesive is left at the roots of the bumps after the surface protective sheet is peeled. The surface protective sheet of the invention is used for grinding a back surface of a semiconductor wafer, and in the surface protective sheet, one surface of a base sheet is provided with an opening portion having a diameter smaller than an outer diameter of a semiconductor wafer to be stuck, on said opening portion no adhesive layer being formed, and a portion which is provided around the opening portion and on which an adhesive layer is formed.

Surface-protecting sheet and semiconductor wafer lapping method

A semiconductor wafer protection structure including a semiconductor wafer and a protective sheet overlaid on a circuit surface of the semiconductor wafer, wherein the protective sheet has a larger diameter than the outer diameter of the semiconductor wafer. Semiconductor wafer protection structures and methods, and laminated protective sheet for use therein are provided and enable prevention of damage to a wafer during grinding and transportation when the wafer is ground to an ultrathin thickness and transported. Also provided is a process for processing a semiconductor wafer whereby damage to the wafer can be reduced during application and cutting of an adhesive sheet.

Semiconductor wafer protection structure and laminated protective sheet for use therein

A pressure sensitive adhesive sheet to be used in producing an extremely thin semiconductor chip which is free of breakage and discoloration by a predicing process and a method of use thereof are provided. The pressure sensitive adhesive sheet is used in a method for producing a semiconductor chip, in which the method involves the steps of: forming a groove having depth smaller than thickness of a wafer on a surface of the wafer on which a semiconductor circuit is formed; reducing the thickness of the wafer and finally dividing the wafer into individual chips by grinding a back face of the wafer. The pressure sensitive adhesive sheet contains a rigid substrate, a vibration relaxation layer provided on one face of the rigid substrate and a pressure sensitive adhesive layer provided on the other face of the rigid substrate, in which thickness of the rigid substrate is 10 to 150 &#x3bc;m and Young's modulus thereof is 1000 to 30000 MPa, and thickness of the vibration relaxation layer is 5 to 80 &#x3bc;m and a maximum value of tan &#x3b4; of dynamic viscoelasticity thereof at &#x2212;5&#xb0; C. to 120&#xb0; C. is 0.5 or more.

Growing community of inventors

Saitama, Japan

Hitoshi Ohashi