Canon Kabushiki Kaisha

Victor Company of Japan, Limited

Hitoshi Oda

Takeo Ono

Mamoru Miyawaki

Akira Shinmi

Kou Yoneda

Fumihiko Saito

Masahiro Okuda

Toyoshige Sasaki

Tetsuya Kaneko

Toshihiko Takeda

Keisuke Yamamoto

Takashi Iwaki

Masataka Yamashita

Yasue Sato

Miki Tamura

Masaru Kamio

Ryuichi Arai

Hideshi Kawasaki

Kazuhiro Jindai

Yasuo Tomita

Nobuo Watanabe

Yukio Masuda

Takahiko Ishiwatari

Hisaaki Kawade

Masato Yamanobe

Nobutoshi Mizusawa

Hajime Sakata

Kazuya Matsumoto

Masao Sugata

Shigeo Shimizu

Tokihiko Ogura

Fumio Kishi

Masaaki Matsushima

Masanobu Shigeta

Masanori Mitome

Kuniji Osabe

Toshio Kato

Masamichi Yamanishi

Nobutoshi Mizasawa

This invention provides an electron source manufacturing apparatus which can be easily downsized and operated. The electron source manufacturing apparatus includes a support member for supporting a substrate () having a conductor (), a vessel () which has a gas inlet port () and a gas exhaust port () and covers a partial region of the surface of the substrate (); a gas inlet unit () connected to the gas inlet port () to introduce gas into the vessel, an exhaust unit () connected to the gas exhaust port to evacuate the interior of the vessel, and a voltage application unit () for applying a voltage to the conductor.

Manufacturing method of an image forming apparatus

In an electron emitting device, an electron source and an image forming apparatus making use of it, and producing methods of them, an organic film is present on a pair of conductive films forming the electron emitting device. This organic film is placed in an area on the conductive films. This prevents occurrence of leak paths between the conductive films, which used to occur because of change of the organic film on the substrate into a conductor where the organic film existed on the substrate outside the area of the conductive films, and prevents decrease in electron emission efficiency.

Electron emitting device, electron source, image forming apparatus and producing methods of them

This invention provides an electron source manufacturing apparatus which can be easily downsized and operated. The electron source manufacturing apparatus includes a support member for supporting a substrate ( ) having a conductor ( ), a vessel ( ) which has a gas inlet port ( ) and a gas exhaust port ( ) and covers a partial region of the surface of the substrate ( ); a gas inlet unit ( ) connected to the gas inlet port ( ) to introduce gas into the vessel, an exhaust unit ( ) connected to the gas exhaust port to evacuate the interior of the vessel, and a voltage application unit ( ) for applying a voltage to the conductor.

Apparatus for producing electron source

A method of manufacturing an electron source with electron emitting elements is provided. The method has a process of depositing a deposit substance in an area including at least an area of the electron emitting element from which area electrons are emitted. The depositing process is performed in an atmosphere of a gas containing at least a source material of the deposit substance, the gas having a mean free path allowing the gas to take a viscous flow state.

Electron source manufacturing method, and image forming apparatus method

An electron beam apparatus comprises an electron-emitting device, an anode separated from the electron-emitting device by a distance H (m), means for applying a voltage Vf (V) to the device, and means for applying a voltage Va (V) to the anode. The device has an electron-emitting region arranged between a lower potential side electroconductive thin film which is connected to a lower potential side electrode and a higher potential side electroconductive thin film which is connected to a higher potential side electrode. The device also has a film containing a semiconductor substance with a thickness not greater than 10 nm. The semiconductor-containing film extends on the higher potential side electroconductive thin film from the electron-emitting region toward the higher potential side electrode over a length L (m). The above Vf, Va, H and L satisfy the relationship L&gE;(1/&pgr;)&middot;(Vf/Va)&middot;H.

Electron beam apparatus and method of driving the same

An electron beam apparatus comprises an electron-emitting device, an anode separated from the electron-emitting device by a distance H (m), means for applying a voltage Vf (V) to the device, and means for applying a voltage Va (V) to the anode. The device has an electron-emitting region arranged between a lower potential side electroconductive thin film which is connected to a lower potential side electrode and a higher potential side electroconductive thin film which is connected to a higher potential side electrode. The device also has a film containing a semiconductor substance with a thickness not greater than 10 nm. The semiconductor-containing film extends on the higher potential side electroconductive thin film from the electron-emitting region toward the higher potential side electrode over a length L (m). The above Vf, Va, H and L satisfy the relationship L.gtoreq.(1/.pi.).multidot.(Vf/Va).multidot.H.

A semiconductor device in which a current is controlled by light includes a semiconductor member having a source unit and a drain unit and a channel unit through which electrons may flow between the source unit and the drain unit. The channel unit has a quantum well layer having a plurality of quantum energy levels and barrier layers provided adjacent to the well layer. Upon light irradiation of the quantum well layer, electrons make transitions between the different quantum energy levels, and the current flowing between the source unit and the drain unit is controlled by varying the mobility of these transitioned electrons.

Semiconductor device for varying the mobility of electrons by light

An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating electrons from the source electrode to the drain electrode and a gate electrode provided on a halfway portion of the channel means between the source electrode and the drain electrode for dividing the channel means into plural channels solely in the halfway portion of the channel means. A positional relationship between the channel means and the gate electrode is set so that a depletion layer is extended under the gate electrode toward the channel means by applying a given voltage to the gate electrode. The depletion layer extended through the channel means forms an island which inhibits the propagation of electrons in the channel means and thus divides the channel means into the plural channels.

Electron wave interference devices, methods for modulating an

An optical device comprises a substrate, a first guiding layer having a guided mode provided on the substrate, a second guiding layer laminated with the first guiding layer on the substrate, the second guiding layer having a guided mode different from that of the first guiding layer, and a diffraction grating provided on an area where the first and second guiding layers have their guided modes overlapping, the diffraction grating serving to couple the light on the specific range of wavelengths that propagate through the first guiding layer, with the second layer, wherein the diffraction grating comprises a high refractive index region and a low refractive index region disposed periodically in the propagation direction of light, the ratio of the high refractive index region to the low refractive index region occupied in one period changing gradually in the propagation direction of light.

Optical device used wavelength selective photocoupler

A tracking error signal detecting apparatus includes a device for supplying an electron beam, a device for applying the electron beam to a tracking pattern formed on a recording medium, and a device for forming a tracking error signal on the basis of a signal produced from the tracking pattern upon application of the electron beam. An information recording-reproducing apparatus includes an applying device having a plurality of electron ray sources, a device for controlling the driving of the plurality of electron ray sources in response to a signal, a device for directing the electron rays from the electron ray sources to a recording medium, and a device for reproducing information from signals produced upon application of the electron rays to the recording medium.

Tracking error signal detecting apparatus using an electron beam and

In a polarization-state converting apparatus for use as an optical isolator, an optical modulator and the like, there are provided a waveguide including a magnetic semiconductor, a device for applying a magnetic field to the waveguide in a first predetermined direction, a device for applying an electric field to the waveguide in a second predetermined direction, and a mode conversion is caused via electrooptic and magnetooptic effects due to the electric and magnetic fields to change the polarization state of light propagating through the waveguide. When used as an optical isolator, the optical isolation is performed to compensate for degradation of the mode conversion rate due to a phase mismatch between light incident upon the waveguide and light emerging from the waveguide. When used as an optical modulator, the optical modulation of light emerging from the waveguide is performed by varying the electric field and an optical isolation function is effected while compensating for degradation of the mode conversion rate due to a phase mismatch between light incident upon the waveguide and light emerging from the waveguide.

Optical polarization-state converting apparatus for use as isolator,

An optical modulation apparatus includes a semiconductor element having a quantum well structure, a unit for applying an electric field to the quantum well structure of the semiconductor element, a unit for supplying polarized probe light to the semiconductor element, the probe light emerging from the semiconductor element such that a polarization state thereof is changed by an electrooptical effect in the quantum well structure, a unit for causing the semiconductor element to receive pump light which causes virtual charge excitation in the quantum well structure, the virtual charge excitation screening the electric field applied to the quantum well structure, and a polarizer for converting a change in polarization state of the light emerging from the semiconductor element into a change in intensity.

Method and apparatus for modulating light using semiconductor element

A Bloch line transferring method or system comprises a step of transferring only a first Bloch line of the Bloch line pair in the magnetic wall in a predetermined direction, and a step of transferring a second Bloch line of the Bloch line pair in the predetermined direction to form the Bloch line pair. It typically comprises applying a magnetic field perpendicular to a film plane of a magnetic thin film having the magnetic wall, to the magnetic thin film, and applying a magnetic field parallel to the film plane of the magnetic film, to the magnetic thin film along the magnetic wall.

Transfering bloch lines using perpendicular and in-plane pulse magnetic

There is provided a magnetooptic device including a substrate; a semiconductor layer having a quantum well structure formed on the substrate, in which the semiconductor layer is formed by alternately laminating a well layer and a barrier layer and at least the barrier layer in those layers contains magnetic ions; and electrodes to apply an electric field to the semiconductor layer. A light which was polarized in a predetermined direction is input to the semiconductor layer. A magnetic field is applied to the semiconductor layer. An electric field is applied to the semiconductor layer by the electrodes. The light which was transmitted in the semiconductor layer is extracted. A degree of leakage of a wave function of the carrier in the well layer into the barrier layer changes. An effective magnetic field which a carrier spin feels changes by an exchange interaction between the carrier spin and a magnetic moment associated with the magnetic ions. Thus, a degree of magnetooptic effect which is given to the transmission light changes. The degree of manetooptic effect can be controlled by the applied electric field. The magnetooptic device is preferably used as an optical modulator or an optical isolator in the field of optical communications or optical memories.

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Yokohama, Japan

Hitoshi Oda