Shin-Etsu Chemical Co., Ltd.

Kanazawa University

National Institute of Advanced Industrial Science and Technology

Other

Hewlett-Packard Company

Shin-Etsu Polymer Co., Ltd.

Saitama University

Jfe Engineering Corporation

Mitsui E&s Machinery Co., Ltd.

Industrial Science and Technology

National Institute of Advanced

Atsuhito Sawabe

Agd Material Co.

Japan Association of Cargo-Handling Machinery Systems

National University Corporation Kanazawa University

Hitoshi Noguchi

Yoshihiro Kubota

Meguru Kashida

Yoshihiko Nagata

Masahiko Ogura

Toshiharu Makino

Satoshi Yamasaki

Hiromitsu Kato

Norio Tokuda

Shozo Shirai

Daisuke Takeuchi

Tsubasa Matsumoto

Hiroyuki Kawashima

Hideki Suzuki

Junichi Ikeno

Yohei Yamada

Takao Inokuma

Daisuke Kuwabara

Yuichi Hamada

Shintaro Maeda

Shinichi Sato

Tomoyuki Akiyama

Hiroshi Inomata

Ikuo Okada

Hideki Wakamatsu

Hideyo Okushi

Hideo Akama

Kimitaka Kumagae

Tetsuya Shiraishi

Rika Matsuo

Kohichi Maeda

Takeshi Kyo

Hideo Okara

Hisao Yoshino

Hideto Kiyohara

Yoshiharu Yoshida

Ryoma Inui

Kenichi Murano

A method for manufacturing a laminate substrate which includes a single crystal diamond (111) layer, includes heteroepitaxially growing an intermediate layer on an underlying substrate whose main surface has an off angle within a range, −8.0° or more and −0.5° or less, or +0.5° or more and +8.0° or less in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111); forming diamond nuclei on a surface of the intermediate layer; and heteroepitaxially growing, on the intermediate layer surface on which the nuclei are formed, a single crystal diamond (111) layer which has an off angle within a range, more than −10.5° and less than −2.0°, or more than +2.0° and less than +10.5° in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111).

Laminate substrate, freestanding substrate, method for manufacturing laminate substrate, and method for manufacturing freestanding substrate

A method of manufacturing a diamond substrate includes: a step of placing a laser condensing unitconfigured to condense laser light B so as to face an upper surfaceof a blockof single crystal diamond, a step of forming a modified layer, which includes a processing markof graphite and a crackextending along a surface (111) around the processing mark, in a partial region of the upper surfaceof the blockalong the surface (111) of the single crystal diamond, along the surface (111) of the single crystal diamond at a predetermined depth from the upper surfaceof the blockby radiating the laser light B on the upper surfaceof the blockfrom the laser condensing unitunder predetermined conditions and condensing the laser light B inside the block, and moving the laser condensing unitand the blockin a relative manner two-dimensionally, and a step of forming a cleavage planeat the predetermined depth of the remaining region of the upper surfaceof the blockby spontaneously propagating cleavage from the modified layer

Method of manufacturing diamond substrate

A laminate substrate which includes a single crystal diamond (111) layer, including: an underlying substrate, an intermediate layer on the underlying substrate, and the single crystal diamond (111) layer on the intermediate layer, in which the underlying substrate has a main surface which has an off angle within a range, −8.0° or more and −0.5° or less, or +0.5° or more and +8.0° or less in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111), and the single crystal diamond (111) layer has an off angle within a range, more than −10.5° and less than −2.0°, or more than +2.0° and less than +10.5° in the crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to the crystal plane orientation of (111).

A method for manufacturing diamond substrate of using source gas containing hydrocarbon gas and hydrogen gas to form diamond crystal on an underlying substrate by CVD method, to form a diamond crystal layer having nitrogen-vacancy centers in at least part of the diamond crystal, nitrogen or nitride gas is mixed in the source gas, wherein the source gas is: 0.005 volume % or more and 6.000 volume % or less of the hydrocarbon gas; 93.500 volume % or more and less than 99.995 volume % of the hydrogen gas; and 5.0&#xd7;10volume % or more and 5.0&#xd7;10volume % or less of the nitrogen gas or the nitride gas, and the diamond crystal layer having the nitrogen-vacancy centers is formed. A method for manufacturing a diamond substrate to form an underlying substrate, a diamond crystal having a dense nitrogen-vacancy centers (NVCs) with an orientation of NV axis by performing the CVD.

Diamond substrate and method for manufacturing the same

A container terminal operation method for a container terminal including a storage area in which a storage block is vertically arranged, wherein: a container conveying vehicle orbits through the storage block, apron, etc.; a container is handed over between the container conveying vehicle and the storage block on a lateral side thereof in a longitudinal direction; a handover area for handover of the container between the container conveying vehicle and an external vehicle, is defined in an area closer to a land than a land-side end; an external traveling lane is defined for the external vehicle; and the handover of the container in the handover area is carried out in a state where the container conveying vehicle and the external vehicle are both directed in a direction intersecting the longitudinal direction of the storage block.

Container terminal operation method

It is an object to provide a method for producing a diamond substrate effective for reducing various defects including dislocation defects and a foundation substrate used for the same. This object is achieved by a foundation substrate for forming a diamond film by a chemical vapor deposition method, wherein an off angle is provided to the surface of the foundation substrate with respect to a predetermined crystal plane orientation.

Foundation substrate for producing diamond film and method for producing diamond substrate using same

A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Diamond substrate and freestanding diamond substrate

A substrate manufacturing method capable of easily obtaining a thin magnesium oxide single crystal substrate is provided. A first step is performed which disposes a condenser for condensing a laser beam on an irradiated surface of a magnesium oxide single crystal member in a non-contact manner. A second step is performed which forms processing mark lines in parallel by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substrate relative to each other in a two-dimensional manner. A third step is performed which forms new processing mark lines between the adjacent irradiation lines in the second step to allow planar separation, by irradiating the laser beam to the surface of the single crystal substrate under designated irradiation conditions to condense the laser beam into an inner portion of the single crystal substrate while moving the condenser and the single crystal substraterelative to each other in a two-dimensional manner.

Method of making a peeled magnesium oxide substrate using laser irradiation

A substrate manufacturing method includes: a first step of disposing a condenser for condensing a laser beam in a non-contact manner on a surfaceof a magnesium oxide single crystal substrateto be irradiated; and a second step of irradiating a laser beam to a surface of the magnesium oxide single crystal substrateand condensing the laser beam into an inner portion of the single crystal member under designated irradiation conditions using the condenser, and at a same time, two-dimensionally moving the condenser and the magnesium oxide single crystal substraterelatively to each other, and sequentially forming processing marks to sequentially allow planar peeling.

Method of making a peeled substrate using laser irradiation

Method for manufacturing diamond substrate

The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

A method for manufacturing a single crystal diamond in which vapor phase synthetic single crystal diamond is additionally deposited on a single crystal diamond seed substrate obtained by vapor phase synthesis, includes a step of measuring flatness of the seed substrate, a step of determining whether or not to flatten the seed substrate based on the measurement result of the flatness, and any one of the following two steps of a step of additionally depositing the vapor phase synthetic single crystal diamond after flattening the seed substrate for which the flattening is necessary based on the determination and a step of additionally depositing the vapor phase synthetic single crystal diamond without flattening the seed substrate for which the flattening is not necessary based on the determination.

Method for manufacturing a single crystal diamond

A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5&#xd7;10/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.

Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material

Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode () for holding the substrate (S) and a voltage-applying electrode (). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.

Diamond producing method and DC plasma enhanced CVD apparatus

The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (&#x3b1;-AlO) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

Base substrate for epitaxial diamond film, method for producing the base substrate for epitaxial diamond film, epitaxial diamond film produced with the base substrate for epitaxial diamond film, and method for producing the epitaxial diamond film

Growing community of inventors

Annaka, Japan

Hitoshi Noguchi