Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Hitoshi Nakayama

Shinya Sasagawa

Masashi Tsubuku

Daigo Shimada

Shunpei Yamazaki

Yuichi Sato

Hiroshi Fujiki

Motomu Kurata

Akihiro Ishizuka

Taiga Muraoka

Hideo Tomita

Atsushi Hikosaka

A semiconductor device including: a first insulator in which an opening is formed; a first conductor positioned in the opening; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide and the first conductor; a third conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a fourth conductor positioned over the second insulator and overlapping with the fifth oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide. The second conductor is in contact with the top surface of the first conductor.

Oxide semiconductor device

Semiconductor device and fabrication method of semiconductor device

A semiconductor device having high on-state current and favorable reliability is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a first conductor over the third oxide; a second conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a third conductor positioned over the second insulator and overlapping with the second oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide, and the conductivity of the fourth oxide is higher than the conductivity of the second oxide.

Semiconductor device

When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a three-layer structure and two-step etching is performed. In the first etching process, an etching method in which the etching rates for at least the second film and the third film are high is employed, and the first etching process is performed until at least the first film is exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a 'layer provided below and in contact with the first film' is lower than that in the first etching process is employed. The side wall of the second film is slightly etched when a resist mask is removed after the second etching process.

Semiconductor device and manufacturing method thereof

To establish a processing technique in manufacture of a semiconductor device including an In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor. An In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl, BCl, SiCl, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor layer can be selectively etched with little removal of the In&#x2014;Sn&#x2014;Zn&#x2014;O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.

Method for manufacturing semiconductor device

Semiconductor device and method for manufacturing the same

When a transistor including a conductive layer having a three-layer structure is manufactured, three-stage etching is performed. In the first etching process, an etching method in which the etching rates for the second film and the third film are high is employed, and the first etching process is performed until the first film is at least exposed. In the second etching process, an etching method in which the etching rate for the first film is higher than that in the first etching process and the etching rate for a 'layer provided below and in contact with the first film' is lower than that in the first etching process is employed. In the third etching process, an etching method in which the etching rates for the first to the third films are higher than those in the second etching process is preferably employed.

A transistor is manufactured by a method including: forming a first wiring layer; forming a first insulating film to cover the first wiring layer; forming a semiconductor layer over the first insulating film; forming a conductive film over the semiconductor layer; and performing at least two steps of etching on the conductive film to form second wiring layers which are apart from each other, wherein the two steps of etching include at least a first etching process performed under the condition that the etching rate for the conductive film is higher than the etching rate for the semiconductor layer, and a second etching process performed under the condition that the etching rates for the conductive film and the semiconductor layer are higher than those of the first etching process.

Transistor and manufacturing method of the same

It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.

Method for manufacturing SOI substrate

A scrambling apparatus includes an IC card connector for receiving an IC card in which at least either scramble control information or unscramble control information is written in advance, a reading circuit for reading the stored contents of the IC card and a control system for controlling the operation of the apparatus. The scrambling apparatus may also include an IC card connector for receiving a data storing IC card, a data writing circuit for writing scramble control information, unscramble control information and the information related to the operations of the apparatus into the IC card.

Growing community of inventors

Atsugi, Japan

Hitoshi Nakayama