Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Hitoshi Nagata

Junji Miyazaki

Yasuhiro Yoshida

Shinji Kishimura

Naoki Nakagawa

Kazuya Kamon

Hirofumi Fujioka

Hiroyuki Nakajima

Kazunori Inoue

Takeshi Morita

Toru Takeguchi

Takao Sakamoto

Kazuyuki Sakata

A thin film transistor includes a gate electrode, a gate insulating film formed to cover the gate electrode, a semiconductor layer including a channel region formed over the gate electrode, a source electrode and a drain electrode including a region connected to the semiconductor layer, where at least a part of the region is overlapped with the gate electrode, an upper insulating film formed to cover the semiconductor layer, the source electrode and the drain electrode, where the upper insulating film is directly in contact with the channel region of the semiconductor layer and discharges moisture by a heat treatment and a second upper insulating film formed to cover the first protective film and suppress moisture out-diffusion.

Thin film transistor, display device using thereof and method of manufacturing the thin film transistor and the display device

A wiring layer includes a signal line and covers a predetermined portion on a source region and a drain region of a crystalline silicon layer. A gate insulating layer is on the crystalline silicon layer and the wiring layer. A gate electrode layer above the gate insulating layer includes a scanning line, a gate electrode corresponding to a channel region of the crystalline silicon layer, and a capacitor electrode corresponding to a predetermined portion of the wiring layer. The capacitor electrode is formed separately from the scanning line and the gate electrode and is configured to form a capacitor with the wiring layer. An interlayer insulating film is on the gate electrode layer and the gate insulating layer. A pixel electrode layer on the interlayer insulating film includes a pixel electrode connected to the wiring layer through a contact hole in the gate insulating layer and the interlayer insulating film.

Display device and method of manufacturing the display device

A thin film transistor according to an embodiment of the present invention includes: a semiconductor layer formed on a substrate and having a first diffusion region, a channel region, and a second diffusion region; a gate electrode opposite to the semiconductor layer across a gate insulating film formed on the semiconductor layer; and a connecting conductive film formed on the semiconductor layer opposite to the gate insulating film and extending from the first diffusion region up to a predetermined position in the channel region to electrically connect between the first diffusion region and the channel region. The transistor further includes a laying conductive layer formed on the semiconductor layer opposite to the gate insulating film and electrically connected with the second diffusion region.

Thin film transistor, method of manufacturing the thin film transistor, and display device

A thin film transistor includes a metal substrate, a first conductive barrier layer placed on the metal substrate to prevent diffusion of substance of the metal substrate, a protective insulating film placed on the first conductive barrier layer, a semiconductor layer placed on the protective insulating film and including a source region, a drain region and a channel region, a gate insulating film placed on the semiconductor layer, and a gate electrode placed above the semiconductor layer with the gate insulating film interposed therebetween. The first conductive barrier layer and the semiconductor layer are electrically connected through a first opening of the protective insulating film.

Thin film transistor, manufacturing method thereof, and active matrix display apparatus

A thin film transistor device according to an embodiment of the invention includes: a thin film transistor having a silicon layer including a source region, a drain region, and a channel region, a gate insulating layer, and a gate electrode formed on an insulating substrate; an interlayer insulating layer covering the thin film transistor; a line electrically connected with the source region, the drain region, and the gate electrode through a contact hole formed in the interlayer insulating layer; a first upper insulating layer covering the line and the interlayer insulating layer and smoothing out stepped portions of the line and irregularities of a surface of the interlayer insulating layer; and a second upper insulating layer covering the first upper insulating layer, the second upper insulating layer having a hydrogen diffusion coefficient smaller than a hydrogen diffusion coefficient of the first upper insulating layer.

Thin film transistor device and method of manufacturing the same

A thin film transistor includes: a substrate, a gate electrode, an insulating film, a semiconductor film, a source electrode, a drain electrode, wherein in at least one electrode of the gate electrode, the source electrode and the drain electrode, end portion of the at least one electrode is tapered in such a manner that a thickness decreases in a direction toward end face of the at least one electrode, the at least one electrode being composed of one electrode material, and prescribed physical property of the at least one electrode being changed in a direction perpendicular to a surface of the at least one electrode, so that an etching rate of the at least one electrode is changed in the direction.

Thin film transistor and method of manufacturing the same

A mask pattern is transferred at a high resolution regardless of the configuration of a light shielding region. A plurality of light shielding members are disposed on a transparent substrate spaced from and parallel to each other. A main phase shifting film is formed in every other region between adjacent light shielding members on the transparent substrate in a direction along the arrangement of the light shielding members. At the periphery of the main phase shifting film, an auxiliary phase shifting film is disposed. Light through the main phase shifting film is 180 degrees out of phase from light through the transparent substrate while light through the auxiliary phase shifting film is 90 degrees out of phase from light through the transparent substrate. Due to the auxiliary phase shifting film, the intensity of transmitted light would not drop to zero at a border region between the main phase shifting film and the transparent substrate. Hence, the mask pattern is transferred at an enhanced transfer accuracy.

Method of manufacturing a photomask

The present invention is directed to a method of forming and removing a resist pattern, used in a semiconductor manufacture. In a first mode of the present invention, an upper resist layer containing germanium is selectively formed on a bottom resist layer and a resist pattern is formed with the upper resist layer as a mask. In a second mode of the present invention, a resist layer formed on a substrate is selectively exposed to introduce a germanium compound into the exposed portions and the above described resist layer is subjected to an anisotropic dry etching to remove the nonexposed portions of the resist layer, whereby forming a resist pattern. Accordingly, the fine pattern can be formed on the substrate in high accuracy by the use of the above described resist pattern. In addition, in the first and the second modes of the present invention, the resist pattern is removed by the use of an acid having an oxidizing power, so that the resist pattern can be easily removed from the substrate.

Method of forming and removing resist pattern

The relations in phase between first and second phase regions which are disposed on both sides of light-blocking regions interposing between them are arranged that there is a phase difference between the lights transmitted by the first and second phase regions enough to cancel with each other because of the interference, while the relations in phase between the first and second phase regions and third phase region disposed adjacent to them are arranged that between the lights transmitted by them there is a phase difference about a half of the phase difference between the lights transmitted by the first and second phase regions. Thus, the lights transmitted by the first and second phase regions and prevailing in the back sides of the light-blocking regions cancel with each other because of the interference to enchance the accuracy of the transfer at the edge portions of the light-blocking regions. Moreover, the cancellation of the lights caused by the interference at the boundaries separating the third phase region from the first and second phase regions is weakened to an extent that it exerts no effect on the transference of the pattern. As a result, the mask pattern can be transferred with high resolution without any effect of the configurations of the light-blocking regions.

Photomask and method of manufacturing the same

A photomask includes a transparent substrate, a predetermined pattern of a light blocking member disposed on the transparent substrate, and a phase member formed along a peripheral edge of the light blocking member and exposed by a predetermined width. The photomask manufacturing method includes forming a transparent film on a surface of a transparent substrate, forming a predetermined pattern of a light blocking member on the transparent film, forming an etching mask layer on the transparent film and light blocking member, anisotropically etching the etching mask layer to leave the etching mask layer on the transparent film and along a peripheral edge of the light blocking member, and selectively etching the transparent film with the light blocking member and the remaining etching mask layer as a mask to form a phase member of the transparent film along the peripheral edge of the light blocking member.

Photomask and method of manufacturing a photomask

According to the inventive photomask, a light shielding pattern as well as a high reflection film are formed at one major surface side of a transparent substrate. Thus, a focal position in a resist film with respect to light directly passing through the high reflection film is separated from a focal position in the resist film with respect to light multiple-reflected by the high reflection film along the thickness direction of the resist film, whereby the depth of focus is enlarged as the result.

Photomask

A method of manufacturing a photomask, according to the present invention, comprises the step of entirely forming an intermediate shifter on a transparent substrate, light shielding layers and a phase shifter such that the thickness of the intermediate shifter successively varies. In edge portion of the phase shifter, thus, the phase of light is continuosly shifted from 0 to 180 degree. As in result, light intensity at the edge portion does not decrease to zero but has a relatively large value, preventing a bridge to be formed.

Growing community of inventors

Tokyo, Japan

Hitoshi Nagata