Kobelco Research Institute, Inc.

Kabushiki Kaisha Kobe Seiko Sho

Kobe Steel, Ltd.

Sony Disc & Digital Solutions Inc.

Hitoshi Matsuzaki

Katsutoshi Takagi

Junichi Nakai

Yuuki Tauchi

Hideo Fujii

Toshihiro Kugimiya

Yoichiro Yoneda

Kotaro Kitashita

Toshiki Sato

Yuki Tauchi

Naoki Okawa

Masaya Ehira

Norihiro Jiko

Hidekazu Morimoto

An Al-base alloy sputtering target consisting Ni and one or more rare earth elements, wherein there are 5.0&#xd7;10/mmor more compounds whose aspect ratio is 2.5 or higher and whose equivalent diameter is 0.2 &#x3bc;m or larger, when a cross sectional surface perpendicular to the plane of the target is observed at a magnification of 2000 or higher.

Al-Ni-rare earth element alloy sputtering target

The invention relates to an Ag-based alloy sputtering target including at least one element selected from the group consisting of Ti, V, W, Nb, Zr, Ta, Cr, Mo, Mn, Fe, Co, Ni, Cu, Al, and Si in a total amount of 1 to 15% by weight, in which the Ag-based alloy sputtering target has an arithmetic mean roughness (Ra) of 2 &#x3bc;m or more and a maximum height (Rz) of 20 &#x3bc;m or more at a sputtering surface thereof.

AG-based alloy sputtering target

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values Aand Busing the formula below, and selecting larger one of the values Aand Bas the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

AG base sputtering target and process for producing the same

Al&#x2014;Ni-rare earth element alloy sputtering target

The sputtering target made of a Ag&#x2014;Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I/I+I+I+I)]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

Ag-Bi-base alloy sputtering target, and method for producing the same

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

Ag base sputtering target and process for producing the same

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Takasago, Japan

Hitoshi Matsuzaki