Renesas Electronics Corporation

Taiyo Yuden Co., Ltd.

Renesas Technology Corp.

Renesas Electronics Coproration

Hitoshi Matsuura

Yoshito Nakazawa

Kenji Otake

Takayuki Arai

Yuji Yatsuda

Tsuyoshi Kachi

Hideki Ogawa

Atsushi Tanada

Kiyoshi Tanaka

Masahiro Hachiya

Yukio Takahashi

Hiroshi Kishi

Tomomi Kobayashi

Kenji Kawano

Kenichiro Nogi

Hidemi Iwao

Yoshikazu Okino

Ryo Kanda

Makoto Koshimizu

Hidekazu Teshigawara

Shuhei Kurahashi

Ryota Kuroda

Hideo Machida

Naoya Honmo

Shuichi Kikuchi

Yasuyuki Saito

Koji Tateno

Shinsuke Takeoka

Satoshi Eguchi

Kazuki Yoshida

Yuya Abiko

Yoshinori Hoshino

Yoshihiko Yokoi

Yusuke Ojima

Seigo Namioka

Hirotaro Seino

Shinya Ishida

Hideo Numabe

Shigeaki Saito

Takuya Ishida

Takamitsu Matsuo

A coil component according to one aspect of the present invention includes: a coil conductor extending around a coil axis; and a magnetic base body intersecting the coil axis. The magnetic base body includes first metal magnetic particles, second metal magnetic particles, and magnetic gap portions, each of the first metal magnetic particles having a first elastic limit and a first relative permeability, each of the second metal magnetic particles having a second elastic limit smaller than the first elastic limit and a second relative permeability lower than the first relative permeability, each of the magnetic gap portions covering a surface of associated one of the first metal magnetic particles and configured such that a first thickness of the magnetic gap portion in a first direction along the coil axis is larger than a second thickness of the magnetic gap portion in a second direction perpendicular to the first direction.

Coil component, circuit board, electronic device, and method of manufacturing coil component

A semiconductor device includes a trench emitter electrode located at a boundary between one end of an active cell region and an inactive cell region, a trench gate electrode located at a boundary between the other end of the active cell region and the inactive cell region, an end trench gate electrode connected to one end of the trench gate electrode, and an end trench emitter electrode connected to one end of the trench emitter electrode. A hole barrier region of a first conductivity type is provided under a body region of a second conductivity type between the end trench gate electrode and the end trench emitter electrode in a plan view. A body region in the active cell region and a body region in the inactive cell region are connected to each other by a body region between the end trench gate electrode and the end trench emitter electrode.

Semiconductor device and method of manufacturing the same

A built-in resistor electrically connecting a trench gate electrode and a gate pad is formed of a conductive film formed on a semiconductor substrate via an insulating film. Here, a film thickness of the insulating film is larger than a film thickness of an insulating film in a trench and is smaller than an insulating film which is a field oxide film.

A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate, and a first polysilicon film. The semiconductor substrate has a first main surface and a second main surface that is an opposite surface of the first main surface. The semiconductor substrate has a first portion and a second portion. The semiconductor substrate is a collector region arranged on the second main surface located in the first portion, a cathode region arranged on the second main surface located in the second portion, a drift region arranged on the collector region and the cathode region, an emitter region arranged on the first main surface located in the first portion, a base region arranged between the emitter region and the collector region, and an anode region arranged on the first main surface located in the second portion.

Semiconductor device

A coil component according to one or more embodiments of the invention includes a base body including a plurality of metal magnetic particles, where each metal magnetic particle contains a metal element, a coil conductor including a buried portion provided in the base body and an exposed portion externally exposed through the base body, where the coil conductor is mainly composed of copper, and an insulating oxide layer covering a surface of the buried portion, where the insulating oxide layer contains copper element and an oxide of the metal element contained in the metal magnetic particles.

Coil component and method of manufacturing the same

A magnetic material includes a grain compact in which metal grains having oxide films are compacted, wherein the metal grains are constituted by Fe—Si-M soft magnetic alloy (where M represents a metal element that oxidizes more easily than iron), the metal grains in the grain compact are mutually bonded with adjacent metal grains by inter-bonding of their oxide films, and at least some of this bonding of oxide films takes the form of bonding of crystalline oxides, or preferably at least some of the bonding of oxides is based on continuous lattice bond. A coil component has a coil on an interior or surface of an element body wherein the element body uses the magnetic material.

Magnetic material and coil component

A magnetic base body in one embodiment of the invention includes first metal magnetic particles having a first average particle size, and second metal magnetic particles having a second average particle size smaller than the first average particle size. In the embodiment, a first insulating layer having a first thickness is provided on surfaces of the first metal magnetic particles, and a second insulating layer having a second thickness smaller than the first thickness is provided on surfaces of the second metal magnetic particles.

Magnetic base body containing metal magnetic particles and electronic component including the same

A coil component includes: a magnetic body part and a cover part covering one side of a magnetic layer part; and a coil part embedded in the magnetic body part. The magnetic body part is comprised of the following two types of layers: (A) an oblate soft magnetic grain-containing layer, and (B) a spherical grain-containing layer, wherein layer (A) extends over the entire range of the magnetic body part except for a portion including the coil part in a direction perpendicular to an axis direction of the coil part, layer (B) adjoins layer (A) in the axis direction. The cover part is constituted by multiple layers including one or more of layer(s) (A) and one or more of layer(s) (B) and extending over the entire range of the magnetic body part in the direction perpendicular to the axis direction.

Coil component

A coil component includes a magnetic body part and a coil part. The magnetic body part has first and second magnetic layers stacked together alternately in one axis direction, and cover parts covering the first and second magnetic layers from the one axis direction. The coil part has conductor patterns provided on the second magnetic layers. The magnetic body part includes: oblate soft magnetic grain-containing layers extending over the entire range of the magnetic body part in the direction perpendicular to the one axis direction, exposed in the direction perpendicular to the one axis direction, and formed by oblate soft magnetic grains whose thickness direction is oriented in the one axis direction; and spherical grain-containing layers adjoining the oblate soft magnetic grain-containing layers in the one axis direction, and formed by insulative spherical grains.

A semiconductor device includes a trench-gate IGBT enabling the fine adjustment of a gate capacitance independent from cell performance. In a gate wiring lead-out region, a plurality of trenches is arranged spaced apart from each other in an X direction perpendicular to a Y direction. Each trench has a shape enclosed by a rectangular outer outline and a rectangular inner outline in plan view. A trench gate electrode is provided in each of the trenches so as to be electrically coupled to an extraction electrode. To obtain an adequate breakdown voltage between a collector and an emitter, the trenches are formed in a p-type floating region. An n-type drift region is formed in a region located inside an inner outline of the trench in plan view, whereby a capacitance formed between the trench gate electrode and the n-type drift region is used as the reverse transfer capacitance.

Semiconductor device and manufacturing method therefor

A coil component has a magnetic body of rectangular solid shape, a coil with N turns (N is a positive number of 2 or greater) provided inside the magnetic body, an insulating intermediate part, and external electrodes. The coil has a first conductor layer, a second conductor layer, and an inter-layer connection part. The first conductor layer has a first multiple winding part which is wound around one axis with a first spacing. The second conductor layer has a second multiple winding part which is wound around the one axis with the first spacing and faces the first conductor layer. The insulating intermediate part is provided inside the magnetic body and forms, between the first conductor layer and second conductor layer, a second spacing corresponding to a thickness equal to or less than the product of the first spacing and (N&#x2212;1).

In one embodiment, a semiconductor device includes a semiconductor substrate having an upper surface, a trench electrode placed inside a trench formed on the upper surface, and a trench insulating film placed between the trench electrode and the semiconductor substrate, and the semiconductor substrate includes a drift layer, a floating layer for electric field reduction, a hole barrier layer, a body layer and an emitter layer, and the emitter layer, the body layer and the hole barrier layer are separated from the drift layer by the floating layer for electric field reduction, and a path of a carrier passing through an inverted layer formed in the body layer includes the body layer, the hole barrier layer, a non-inverted region of the floating layer for electric field reduction, and the drift layer.

In an active region, a gate electrode is disposed in a trench. Spaced apart from the gate electrode, an emitter electrode is disposed in the trench. A source diffusion layer and a base diffusion layer are formed in the active region. The base diffusion layer has a base bottom portion inclined in such a manner that a portion of the base bottom portion adjacent to the emitter electrode is positionally deeper than a portion of the base bottom portion adjacent to the gate electrode. A contact portion has a contact bottom portion inclined in such a manner that a portion of the contact bottom portion in contact with the emitter electrode is positionally deeper than a portion of the contact bottom portion in contact with the base diffusion layer.

Semiconductor device and method for producing the same

The reliability of a semiconductor device is improved. A contact trench for coupling a field plate and a field limiting ring situated at the corner part of a semiconductor device is formed of a first straight line part and a second straight line part arranged line symmetrically with respect to the crystal orientation &#x3c;011&#x3e;. Respective one ends of the first straight line part and the second straight line part are coupled at the crystal orientation &#x3c;011&#x3e;, and the first straight line part and the second straight line part are set to extend in different directions from the crystal orientation &#x3c;010&#x3e; and the crystal orientation &#x3c;011&#x3e;.

To improve current detection performance of a sense IGBT particularly in a low current region in a semiconductor device equipped with a main IGBT and the sense IGBT used for current detection of the main IGBT. At a peripheral portion located at an outermost periphery of an active region surrounded by a dummy region within a sense IGBT cell, an n-type semiconductor region is formed over an upper surface of a well of a floating state adjacent to a trench gate electrode embedded into a trench at an upper surface of a semiconductor substrate and applied with a gate voltage.

Growing community of inventors

Takasaki, Japan

Hitoshi Matsuura