Mitsubishi Materials Corporation

Mitsubishi Kinzoku Kabushiki Kaisha

Hitoshi Maruyama

Kenichi Hijikata

Koji Hoshino

Satoru Mori

Ji-bin Yang

Akifumi Mishima

Shozo Komiyama

Kenji Orito

Kazuo Watanabe

Jun-ichi Oda

Ichirou Shiono

Katsuyuki Sato

Ryoko Furuhashi

This method for producing an aluminum composite including porous sintered aluminum, includes: mixing aluminum powder with a sintering aid powder containing either one or both of titanium and titanium hydride to obtain a raw aluminum mixed powder; adding and mixing a water-soluble resin binder, water, a plasticizer containing at least one selected from polyhydric alcohols, ethers, and esters, and a water-insoluble hydrocarbon-based organic solvent containing five to eight carbon atoms into the raw aluminum mixed powder to obtain a viscous composition; shape-forming the viscous composition on an aluminum foil or an aluminum plate and causing the viscous composition to foam to obtain a formed object prior to sintering; and heating the formed object prior to sintering in a non-oxidizing atmosphere to obtain an aluminum composite which includes porous sintered aluminum integrally joined onto the aluminum foil or the aluminum plate, wherein when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (&#xb0; C.), then a temperature T (&#xb0; C.) of the heating fulfills Tm-10 (&#xb0; C.)&#x2266;T&#x2266;685 (&#xb0; C.).

Process for production of aluminum complex comprising sintered porous aluminum body

The present invention provides sputtering targets which are useful for depositing ferroelectric films and are resistant to crack generation during sputtering. The sputtering targets comprise a disk target which is formed using a sintered material including a compound oxide of Ba and Ti, Sr and Ti, or Ba, Sr and Ti, and which has a surface which has been subjected to grinding, wherein the scratches 4 formed on the surface of the disk target due to grinding have a pattern radiating from an arbitrary point on the plane of the surface of said disk target.

Sputtering target for depositing ferroelectric film, method for

A high-strength target material for forming a thin magnetooptical recording film having a structure comprising: (a) 20-75% of a complex phase in which at least one crystallized iron-group metal is dispersed finely and uniformly in a dendritic, acicular or block form in a proportion of 5-40%, of the total composition, in a matrix of an intermetallic compound of at least one first rare earth metal and at least one iron-group metal; (b) 15-40% of a rare earth metal phase of at least one second rare earth metal; and (c) the remainder being an intermetallic compound phase of a reaction phase of the complex phase and the rare earth metal phase, all percentages being by area, wherein the first and second rare earth metals are the same or different. The target material has such a low permeability that thin magnetooptical recording films can be formed by a magnetron sputtering process with a high utilization.

Low-permeability high-strength target material for the formation of thin

A novel composite target material that is composed of a rare earth metal and a transition metal (iron-group metal) and which is used in the formation of a thin magnetooptical recording film by sputtering is disclosed. Also disclosed is a process for producing such composite target material. The process comprises the steps of providing a rare earth metal and an iron-group transition metal as separate entities, mixing these metals without alloying, and hot-forming the mixture at a temperature lower than the eutectic point of the system of metallic components in the mixture, thereby forming an intermetallic compound at the interface between the rare earth metal and the transition metal while causing said metals to be bonded together. The target material produced by this process contains 30-50 wt % of the rare earth metal, with the balance being made of the iron-group transition metal and incidental impurities. The structure of the target material is also characterized by the presence of an intermetallic compound phase at the interface between the particles of the rare earth metal and those of the transition metal. This composite target material has sufficiently high density, high strength, high deflective strength and good resistance to thermal shock to permit rotation and inversion during sputtering procedures without cracking. Furthermore, the oxygen content of this target material is no higher than 0.3 wt %. Therefore, a perpendicular magnetization film suitable for use in magnetooptical recording can be readily formed by sputtering the target material of the present invention. As a further advantage, the film deposition rate that can be achieved with this target material is significantly fast in comparison with the conventional alloy target material.

Composite target material and process for producing the same

Growing community of inventors

Omiya, Japan

Hitoshi Maruyama