Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Hitoshi Kudoh

Toshikazu Koudo

Kazuhiro Mihara

Masaharu Tsujimura

A data stream transmission/reception device manages external devices in at least two groups, assigns independent resources to the groups, and for each group, a connection is made to the assigned hardware resource via a preferentially-used plug. This enables handling a plurality of streams at the same time in the case of being connected to a plurality of conventional external devices that have only one logical plug.

Data stream transmission/reception device

An electronic element is provided which includes a pair of electrodes (referred to as facing electrodes) formed within the groove of an insulating film on the substrate, the end portions of the electrodes being separated and facing each other in the groove. When a voltage of a predetermined value or more is applied between the facing electrodes, there occurs a cold cathode emission which causes a flow of electrons from one of the electrodes to the other. At that time, the facing electrodes are melted by heat generated by the applied voltage, and either a short circuit or insulation between the facing electrodes, is attained, depending on the selected structure of the element. In this way, the electronic element of the present invention can perform the protection of semiconductor devices and semiconductor circuits. Also, the electronic element of the present invention can perform the operation of selecting a desired load resistance to be applied to a specific circuit.

Semiconductor integrated circuit protectant incorporating cold cathode

A semiconductor device includes plural transistors in which the transistors themselves share a gate and a channel region and posses three or more source and drain regions. In such a configuration, a drain current is determined by the voltage application condition (potential difference of all source and drain regions). Therefore, assuming one of the three source and drain regions to be a control terminal (disturbance terminal) instability or drift of the transistor operation may be intentionally produced by applying proper voltages to each of the three source and drain regions.

Growing community of inventors

Kyoto, Japan

Hitoshi Kudoh