Tokyo Electron Limited

Hitoshi Kosugi

Yoshiaki Yamada

Taro Yamamoto

Yasuhito Saiga

Derek Bassett

Antonio Luis Pacheco Rotondaro

Tetsuya Sakazaki

Trace Quentin Hurd

Koji Yamashita

Yuichi Yamamoto

Masami Akimoto

Junichi Kitano

Hideharu Kyouda

Shuichi Nagamine

Masashi Enomoto

Koji Tanaka

Keiichi Tanaka

Hisashi Kawano

Takao Inada

Kouzou Tachibana

Akira Nishiya

Shota Umezaki

Tsukasa Hirayama

Toshiyuki Shiokawa

Hiroyuki Masutomi

Takashi Ikeda

Ryo Yamamoto

Seiji Fujimoto

Koichi Hontake

A substrate processing method includes: supplying a first processing liquid containing a chelating agent and a solvent from a first tank toward a substrate having a film of a metal formed on a surface thereof to generate a complex containing the metal and the chelating agent while rotating the substrate; and supplying a second processing liquid containing water toward the substrate to dissolve the complex in the second processing liquid while rotating the substrate, after the complex is generated.

Substrate processing apparatus, substrate processing method, and chemical liquid

In one example, a method for wafer drying includes providing a surface of a first wafer, the surface of the first wafer including a liquid to be removed with a drying process. The method further includes replacing the liquid with a first solid film in a first processing chamber, the first solid film covering the surface of the first wafer. The method further includes transferring the first wafer from the first processing chamber to a second processing chamber. The method further includes processing the first wafer in the second processing chamber by flowing a supercritical fluid through the second processing chamber, where the supercritical fluid removes the first solid film.

System and methods for wafer drying

A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.

Substrate liquid treatment apparatus

A method includes rotating a substrate, supplying a first processing liquid from a first nozzle to the substrate during a first period, and supplying a second processing liquid from a second nozzle to the substrate during a second period. First and second liquid columns are formed by the first and second processing liquids during at least partially overlapped period of the first and second periods, respectively. The shapes and arrangements of the first and second liquid columns satisfy that: at least one of first and second central axis lines of the first and second liquid columns is inclined with respect to a rotational axis line of the substrate, first and second cut surfaces obtained by cutting the first and second liquid columns along a horizontal plane at least partially overlap each other, and any point on the first central axis line is located on the second central axis line.

Substrate processing method and substrate processing apparatus

Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure. The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

Film forming method, film forming apparatus and pattern forming method

A PEB unit has a first heat plate and a second heat plate. After an exposure process for a resist film for EUV on a wafer and before a development process, the PEB unit heats the wafer through the first heat plate at a first heating temperature. A heating time through the first heat plate is not less than 10 seconds and not more than 30 seconds. Thereafter, the PEB unit heats the wafer through the second heat plate at a second heating temperature lower than the first heating temperature. A temperature difference between the first heating temperature and the second heating temperature is not less than 20&#xb0; C. and not more than 60&#xb0; C.

Substrate processing method, computer-readable storage medium and substrate processing system

A photoresist coating and developing apparatusincludes a photoresist film forming unit that forms a photoresist film on a substrate; a heat treatment unit that heats the substrate on which the photoresist film is formed by the photoresist film forming unit; a cooling unit that cools the substrate, on which the photoresist film is formed and which is heated by the heat treatment unit, to normal temperature; a heating unitthat heats the substrate, which is cooled to normal temperature by the cooling unit, to a predetermined temperature; a load-lock chamber Lthat unloads the substrate under depressurized atmosphere to expose the photoresist film; and a transfer devicethat transfers the substrate from the heating unitto the load-lock chamber L

Photoresist coating and developing apparatus, substrate transfer method and interface apparatus

A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.

Pattern forming method and apparatus

A coating/developing apparatus includes a process section including processing units to perform a series of processes for resist coating and development; an interface section disposed between the process section and immersion light exposure apparatus; and a drying section disposed in the interface section to dry the substrate immediately after the immersion light exposure process. The drying section includes a process container configured to accommodate the substrate, a substrate support member configured to place the substrate thereon, a temperature-adjusted gas supply mechanism configured to supply a temperature-adjusted gas into the process container, and an exhaust mechanism configured to exhaust the process container. The drying section is arranged to dry the substrate by supplying the temperature-adjusted gas into the process container with the substrate placed on the substrate support member, while exhausting the process container.

Coating/developing apparatus and pattern forming method

A circulation system for a high refractive index liquid includes a first collecting section configured to collect a high refractive index liquid used in an immersion light exposure section; a first supply section configured to supply the high refractive index liquid collected in the first collecting section to a cleaning section as a cleaning liquid; a second collecting section configured to collect the high refractive index liquid used in the cleaning section; and a second supply section configured to supply the high refractive index liquid collected in the second collecting section to the immersion light exposure section, wherein the high refractive index liquid is circulated between the immersion light exposure section and the cleaning section.

Circulation system for high refractive index liquid in pattern forming apparatus

A method is used for determining a condition of a predetermined process for preparing a process target, which includes a coating film formed on a substrate and including a resist film. This is to prevent film peeling from occurring in the coating film when performing immersion light exposure after the predetermined process. The method includes preparing test targets, each of which includes a sample film corresponding to the coating film and formed on a sample substrate corresponding to the substrate; performing a test process on each of the test targets in a testing unit, which imitates an immersion light exposure apparatus, under a condition corresponding to a designated immersion light exposure condition; and determining a condition of the predetermined process to be used for the coating film, based on a result of the test process.

Method and system for determining condition of process performed for coating film before immersion light exposure

An edge exposure apparatus performing an exposure process on an edge portion of a wafer having a coating film (resist film) formed thereon includes position detection means for detecting positional data of an outer edge of a wafer held by a spin chuck, an exposure portion for performing an exposure process on the edge portion of the wafer, a development nozzle supplying a developer to the exposed region, and alignment means for horizontally moving the spin chuck. An exposure process is performed by the exposure portion on the edge portion of the wafer held by the spin chuck while the alignment means is controlled, based on the positional data of the outer edge of the wafer which is detected by the position detection means, such that the positional relation between the outer edge of the wafer and the exposure portion is kept constant.

Edge exposure apparatus, coating and developing apparatus, edge exposure method and coating and developing method, and storage medium

An apparatus and method for dispensing a rinse solution on a substrate in which the rinse solution is dispensed through one nozzle array substantially near a center of a substrate and is dispensed through a second nozzle array across a radial span of the substrate. Accordingly, the apparatus includes a first nozzle array including at least one nozzle and configured to dispense the rinse solution substantially near a center of the substrate, a first control valve coupled to the first nozzle array and configured to actuate a first flow rate of the rinse solution through the first nozzle array, a second nozzle array including a plurality of nozzles and configured to dispense the rinse solution across a radial span of the substrate, and a second control valve coupled to the second nozzle array and configured to actuate a second flow rate of said rinse solution through the second nozzle array.

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Koshi, Japan

Hitoshi Kosugi