Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Sumitomo Wiring Systems, Limited

Mitsubishi Gas Chemical Company, Inc.

Unisia Jecs Corporation

Toshiba Solutions Corporation

Mitsubishi Corporation

Nihon Polytech Co., Ltd.

Hitoshi Kobayashi

Hung Hung

Yasuhiro Isobe

Akira Yoshioka

Toru Sugiyama

Tetsuya Ohno

Haruhiko Okumura

Goh Itoh

Masaaki Onomura

Hideki Okumura

Satoshi Aida

Masaru Izumisawa

Hisao Fujiwara

Shigeo Kouzuki

Masayuki Saito

Tatsuo Saishu

Yuzo Hirayama

Yumi Fukuda

Masahiko Yamamoto

Yujiro Hara

Akihiko Osawa

Masanobu Tsuchitani

Miki Mori

Masaaki Iwai

Naonori Hosokawa

Hideki Sekiguchi

Takeshi Chujoh

Yoshihiro Kikuchi

Toshiaki Watanabe

Koji Asakawa

Wataru Saito

Takashi Ida

Noboru Yamaguchi

Takeshi Nagai

Toshiro Hiraoka

Ayako Takagi

Shunichi Numazaki

Kenichi Tokano

Yoko Sambonsugi

Rieko Furukawa

Masahiro Baba

Ichiro Omura

Yusuke Kawaguchi

Rei Hasegawa

Hajime Yamaguchi

Tomoki Inoue

Rieko Fukushima

Masakazu Yamaguchi

Yasuhiko Kuriyama

Masayuki Nakamoto

Keiko Kawamura

Satoshi Yanagisawa

Noriaki Yoshikawa

Noboru Matsuda

Hironori Yoshioka

Yasushi Takahashi

Shunsuke Katoh

Yasunobu Nakagoshi

Manabu Kimura

Toshizumi Hirota

Yukio Amino

Satoshi Taji

Masahiko Shiomi

Shigeki Tomita

Akihiro Osawa

Masaru Kawakatsu

Nobuhiro Ooshima

Katsutoshi Nishiguchi

Hirokatsu Matsudaira

A semiconductor device includes a nitride semiconductor element, a first diode, and a second diode; the nitride semiconductor element includes a conductive mounting bed, a semiconductor substrate formed on the mounting bed, a first nitride semiconductor layer, a second nitride semiconductor layer, a first major electrode, a second major electrode, a first gate electrode, and a second gate electrode; the first diode includes a first anode electrode electrically connected to the mounting bed, and a first cathode electrode electrically connected to the first major electrode; and the second diode includes a second anode electrode electrically connected to the mounting bed, and a second cathode electrode electrically connected to the second major electrode.

Semiconductor device

A semiconductor device includes a first terminal, a second terminal, a first chip, and a resistance part. The first chip includes a substrate electrically connected to the second terminal, a nitride semiconductor layer located on the substrate, a first drain electrode located on the nitride semiconductor layer and electrically connected to the first terminal, a first source electrode located on the nitride semiconductor layer and electrically connected to the second terminal, and a substrate capacitance between the first drain electrode and the substrate. The resistance part is connected in series in a path including the substrate capacitance between the first drain electrode and the second terminal.

A semiconductor device includes a first transistor, a first drive circuit including a second transistor, and a second drive circuit including a third transistor. The second transistor and the third transistor are connected in series; and a connection node of the second and third transistors is connected to a gate electrode of the first transistor. The first transistor, the second transistor, and the third transistor are normally-off MOS HEMTs formed in a first substrate that includes GaN. The first drive circuit charges a parasitic capacitance of the first transistor. The second drive circuit discharges the parasitic capacitance of the first transistor.

A semiconductor device includes first and second nitride semiconductor layers. The second layer on the first nitride has a first region, a second region, and a third region between the first and second regions. A first gate electrode is in the first region and extends parallel to a surface of a substrate. A first source electrode is in the first region and extends in the first direction. A second gate electrode in the second region and extends in the first direction. A second source electrode is in the second region and extends in the first direction. A drain electrode coupled to a first and a second wiring. The first wiring directly contacts the second nitride semiconductor layer in the first region. The second wiring directly contacts the second nitride semiconductor layer in the second region. An insulation material is in the third region.

Nitride semiconductor device with element isolation area

A semiconductor device according to an embodiment includes: a first nitride semiconductor layer having a first surface and a second surface; a first source electrode provided on the first surface; a first drain electrode provided on the first surface; a first gate electrode provided on the first surface between the first source electrode and the first drain electrode; a second nitride semiconductor layer having a third surface and a fourth surface, the third surface being provided on the second surface and facing the second surface, and the second nitride semiconductor layer having a smaller band gap than the first nitride semiconductor layer; and a first semiconductor device having a fifth surface provided on the fourth surface and facing the fourth surface with a size equal to or smaller than a size of the fourth surface, the first semiconductor device including a first semiconductor material having a smaller band gap than the second nitride semiconductor layer.

A semiconductor device includes: a drain electrode including a plurality of drain finger parts; a source electrode including a plurality of source finger parts and a Kelvin source part electrically connected with the source finger parts; a sense electrode positioned between a drain finger part and the Kelvin source part, which are next to each other in a particular direction; and a gate electrode positioned between a drain finger part and a source finger part, which are next to each other in the particular direction, and between a drain finger part and the sense electrode, which are next to each other in the particular direction. The sense electrode and the Kelvin source part are electrically connected via a sense resistance due to a spacing between the sense electrode and the Kelvin source part in the particular direction.

A semiconductor device of an embodiment includes: a semiconductor layer including an element region and an element isolation region; a first insulation film provided on the semiconductor layer; a first electrode provided on the first insulation film and extending in a first direction; a second electrode provided on the semiconductor layer, arranged in a second direction intersecting with the first direction, and extending in the first direction; a third electrode provided on the semiconductor layer, arranged in the second direction, and extending in the first direction; second insulation films provided between the first insulation film and the semiconductor layer, and interposing the third electrode in the second direction; a first field plate electrode provided on the first electrode and connected to the first electrode; a second field plate electrode provided on the first field plate electrode and connected to the second electrode; and a third field plate electrode provided on the third electrode and connected to the third electrode. The second insulation films extend from the element isolation region to a part of the element region.

A semiconductor device has a first and a second nitride semiconductor layer and a first and a second electrode thereon. A gate electrode is between the first and second electrodes. A gate field plate is on the gate electrode. A first field plate is above a position between the gate field plate and the second electrode. A second field plate is between the first field plate and the gate field plate. A distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to the portion of the gate field plate that protrudes the most towards the second electrode. The distance from the first nitride semiconductor layer to the second field plate is shorter than a distance from the first nitride semiconductor layer to an end surface of the first field plate on a first electrode side.

A semiconductor device has a first wiring extending in a first direction on a nitride semiconductor layer. A source electrode is electrically connected to the first wiring and extends in a second direction. A drain electrode extends in the second direction and includes a first and second portion extending in the second direction, spaced from each other in the first direction. An element isolation region is in the second nitride semiconductor layer between the first and second portions. A third portion extends in the second direction on the first and second portions. A gate electrode extends in the second direction on the second nitride semiconductor layer between the source electrode and the drain electrode. The portion includes holes therein aligned with each other along the second direction with the spacing between adjacent holes in the second direction increasing with increasing distance in the second direction from the first wiring.

A semiconductor device includes a first electrode on a semiconductor element at a first location and a second electrode on the semiconductor element at a second location spaced from the first location. And insulating film covers the first electrode, the second electrode and a third electrode. First and second pads are on the insulating film. The first electrode contacts the first pad through an opening in a first portion of the insulating film. The second electrode contacts the second pad each through an opening in a second portion of the insulating film. A bonding surface of the first pad is at a first distance above one portion of the insulating film, and a second distance above another. A bonding surface of the second pad likewise at different distances above the insulating film depending on location.

Semiconductor device with electrode pad having different bonding surface heights

A semiconductor device includes a semiconductor package including an n-type channel normally-off transistor, a normally-on transistor, a first diode, and a Zener diode; a first terminal provided on the semiconductor package; a plurality of second terminals provided on the semiconductor package, and the second terminals being lined up in a first direction; a third terminal provided on the semiconductor package; a plurality of fourth terminals provided on the semiconductor package; and a plurality of fifth terminals provided on the semiconductor package, and the fifth terminals being lined up in the first direction.

A semiconductor device includes a first semiconductor layer having a first surface and a second surface. A first metal film is disposed on the first surface. An outer portion of the first surface beyond an outer periphery of the first metal film is left uncovered by the first metal film. A semiconductor substrate has an inner region of a first thickness and a peripheral region of a second thickness, greater than the first thickness. A portion of the first semiconductor layer is between the inner region and the first metal layer. The peripheral region of the semiconductor substrate is below the outer portion of the first surface of the first semiconductor layer. A second metal film is below the inner region of the semiconductor substrate and adjacent to the peripheral region of the semiconductor substrate.

Semiconductor device and method for manufacturing semiconductor device

Provided is a semiconductor device including a normally-off transistor having a first electrode, a second electrode, and a first control electrode, a normally-on transistor having a third electrode, a fourth electrode, and a second control electrode, a first capacitor having a first end and a second end, a Zener diode having a first anode and a first cathode, a first resistor having a third end and a fourth end, a first diode having a second anode and a second cathode, a second resistor having a fifth end and a sixth end, a second diode having a third anode and a third cathode, and a second capacitor having a seventh end and an eighth end.

A semiconductor device includes a first nitride semiconductor layer; a second nitride semiconductor layer provided on the first nitride semiconductor layer and having a bandgap larger than a bandgap of the first nitride semiconductor layer; a nitride insulating layer provided between the first nitride semiconductor layer and the second nitride semiconductor layer; a plurality of first drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of second drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of third drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of fourth drain electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; a plurality of first source electrodes provided between the first drain electrodes and the third drain electrodes, the first source electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer; and a plurality of second source electrodes provided between the first drain electrodes and the third drain electrodes, the second source electrodes each having a part provided on the nitride insulating layer and a part provided beneath the nitride insulating layer. The first drain electrodes are separated from each other by a first distance in a first direction parallel to an interface between the first nitride semiconductor layer and the nitride insulating layer. The second drain electrodes are separated from each other by a second distance in the first direction and positioned from the first drain electrodes by a third distance in the first direction and positioned from the first drain electrodes by a fourth distance in a second direction intersecting with the first direction and parallel to the interface and electrically connected to the first drain electrodes. The third drain electrodes are separated from each other by a fifth distance in the first direction and separated from the first drain electrodes and the second drain electrodes in the second direction. The fourth drain electrodes are separated from each other by a sixth distance in the first direction and positioned from the third drain electrodes by a seventh distance in the first direction and positioned from the third drain electrodes by an eighth distance in the second direction and separated from the first drain electrodes and the second drain electrodes and electrically connected to the third drain electrodes. The first source electrodes are separated from each other by a ninth distance in the first direction. The second source electrodes are separated from each other by a tenth distance in the first direction and positioned from the first source electrodes by an eleventh distance in the first direction and positioned from the first source electrodes by a twelfth distance in the second direction and electrically connected to the first source electrodes.

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Yokohama, Japan

Hitoshi Kobayashi