Fujitsu Corporation

Hitoshi Kishi

Atsushi Tanaka

Kazuo Kobayashi

Yutaka Shimizu

Mitsuru Otagiri

Keiichi Nagasaka

Hideyuki Kikuchi

Yasuhiro Kitade

Chikayoshi Kamata

Hitoshi Kanai

Reiko Kondo

Shin Eguchi

Yoshihiko Seyama

Junya Ikeda

Yuko Miyake

Reiko Kondoh

Keiichi Nagasawa

A combined stripe of a magnetoresistive (MR) film and domain control stripe layers can be formed below a photoresist film on the surface of a substratum. An insulating base layer is then formed to extend over the surface of the substratum. The insulating base layer is allowed to cover over the photoresist film, the magnetoresistive film and the domain control stripe layers on the substratum. When the photoresist film is removed, the insulating base layer remains on the substratum. The insulating base layer keeps contacting the side surface of the magnetoresistive film. The magnetoresistive film can be kept covered with the insulating base layer at the side surface during a subsequent etching process. Any chemical reaction can be avoided between the magnetoresistive film and the etching gas employed in the etching process. The resulting magnetoresistive head element is allowed to exhibit an ideal characteristic in the magnetoresistive effect.

Method of making magnetoresistive head element

A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.

Magnetoresistive sensor

Disclosed herein is a spin valve magnetoresistive sensor including a first conductor layer, a free ferromagnetic layer provided on the first conductor layer, a nonmagnetic intermediate layer provided on the free ferromagnetic layer, a pinned ferromagnetic layer provided on the nonmagnetic intermediate layer, an antiferromagnetic layer provided on the pinned ferromagnetic layer, and a second conductor layer provided on the antiferromagnetic layer. At least one of the free ferromagnetic layer and the pinned ferromagnetic layer has a thickness larger than that providing a maximum resistance change rate or resistance change amount in the case of passing a current in an in-plane direction of the at least one layer. That is, the thickness of at least one of the free ferromagnetic layer and the pinned ferromagnetic layer falls in the range of 3 nm to 12 nm.

Spin valve magnetoresistive sensor having CPP structure

A flux guide type includes a magnetoresistive device for reading a signal flux, and a flux guide for transmitting the signal flux to the magnetoresistive device. The flux guide includes a laminated film that includes a ferromagnetic layer, a non-magnetic layer and a ferromagnetic layer in this order, and the two ferromagnetic layers in the flux guide have antiparallel directions of magnetization with respect to the non-magnetic layer.

Flux guide type device, head having the same, and drive

A magneto-resistive magnetic sensor has an overlay-type structure and includes a cap layer on a top surface of a magneto-resistive structure and a pair of electrodes provided on said cap layer with a separation from each other, wherein there is interposed an oxidation-resistant conductive film underneath each electrode, such that the oxidation-resistant conductive film is sandwiched between the cap film and the electrode.

Magneto-resistive sensor with oxidization-resistant conductive layer between cap layer and electrode overhang

A method is disclosed for magnetizing a magnetic system including a ferromagnetic layer magnetized in a first direction and an anti-ferromagnetic layer provided on said ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process including the sub-steps of annealing the magnetic system in a first annealing state, and applying a magnetic field to the magnetic system in a second direction different from the first direction, while maintaining the magnetic system in the first annealing state. A second thermal annealing process includes the sub-steps of annealing the magnetic system after the first thermal annealing process, to a second annealing state, and applying a magnetic field in a third direction different from the second direction while maintaining the magnetic system in the second annealing state.

Spin-valve magnetic head with the pinned layer having different directions for its magnetization axis and its easy axis

A method is disclosed for fabricating a spin-valve magnetic head including a layered body of a first ferromagnetic layer having a first easy axis of magnetization extending in a first direction, a non-magnetic layer formed on the first ferromagnetic layer, a second ferromagnetic layer provided on the non-magnetic layer, and an anti-ferromagnetic layer provided on the second ferromagnetic layer in exchange coupling therewith. The method includes a first thermal annealing process with the steps of annealing the layered body in a first annealing state and applying a magnetic field to the layered body in a second direction different from the first direction, while maintaining the layered body in the first annealing state. The method further includes a second thermal annealing process with the steps of annealing the layered body, after the first thermal annealing process, in a second annealing state and applying a magnetic field in a third direction different from the second direction while maintaining the layered body in the second annealing state.

The invention provides a GMR head in which an adequate bias point may be set for the free magnetic layer,of the GMR head by suppressing the static magnetic field in the free magnetic layer which arises from a pinned magnetic layer,of the GMR head. The GMR head comprises a sensor section,, a magnetic field correction section,disposed laterally adjacent to the sensor section,. The sensor section,includes, in addition to the free magnetic layer,and the pinned magnetic layer,, an intermediate layer,and an anti-ferromagnetic layer,in a specific arrangement. The magnetic field correction section,may have the same structure as the sensor section,. Because the sensor section,and the magnetic field correction section,are provided independently and disposed laterally adjacent to each other in the direction of height of the GMR head, the magnetic field emerging from the pinned magnetic layer,into the free magnetic layer,is suppressed by the magnetic field correction section,. The magnetic field correction section,may be easily formed together and simultaneously with the sensor section

GMR head, method for its manufacture, and magnetic disc drive utilizing the head

A spin valve magnetoresistive head includes a first soft magnetic layer and a second soft magnetic layer having larger internal stress than that of the first magnetic layer. The larger internal stress of the second soft magnetic layer is created by injecting the second soft magnetic layer with a selected type of ion. Also included in the head is a nonmagnetic layer formed between the first soft magnetic layer and the second soft magnetic layer.

Spin valve magnetoresistive head having magnetic layers with different

The present invention relates to a method of fabricating a magnetoresistive head formed by laminating a magnetic layer and a nonmagnetic metal layer including a silver film and used for converting change in magnetic field into change of resistivity of the device. A method of fabricating a magnetoresistive head upon laminating on a substrate a plurality of magnetic layers arranged to put nonmagnetic metal layer therebetween and a bias magnetic layer formed adjacent to one of the magnetic layers to give a magnetization of the specified direction to the magnetic layer, comprising the steps of setting film thicknesses of the nonmagnetic metal layers to be formed, and forming the nonmagnetic metal layers under a condition where temperature of the substrate is held within a temperature range less than an upper limit of a film forming temperature not to cause pin holes in the nonmagnetic metal layer.

Magnetoresistive head, method of fabricating the same and magnetic

A spin-valve magnetic head has a first ferromagnetic layer with a first easy axis of magnetization extending in a first direction, and a second ferromagnetic layer provided on, and separated from, the first ferromagnetic layer. The second ferromagnetic layer has a magnetization in a second direction substantially perpendicular to the first direction. The magnetization defines a line in the second direction. An anti-ferromagnetic layer provided on the second ferromagnetic layer is exchange coupled to the second ferromagnetic layer. The second ferromagnetic layer has a second easy axis of magnetization extending in a direction intersecting the line in the second direction.

Spin-valve magnetic head with the pinned layer having different

A magnetoresistive head in which an antiferromagnetic material having superior corrosion resistance is used is disclosed. In the magnetoresistive head, a pair of anti-ferromagnetic layers 24a and 24b are formed while contacting with a soft magnetic layer 23, and the antiferromagnetic layers 24a and 24b are made of a PdMn film.

Method of manufacturing magnetoresistive head

The present invention relates to a magnetoresistive head having a spin valve MR film for use in a magnetic sensor, a magnetic head or the like. Of two ferromagnetic layers divided by a nonmagnetic metal film, at least ferromagnetic layer on the side being in contact with an antiferromagnetic layer is formed by a cobalt-nickel-iron alloy including at the rate of 5 to 40 atoms % of a nickel and 30 to 95 atoms % of cobalt.

Magnetoresistive head and magnetic recording/reproducing apparatus

Magnetoresistive head and magnetoresistive recording/reproducing drive

A magnetoresistive head used for reading information signals from a magnetic recording medium using a spin valve magnetoresistance effect, comprises a first ferromagnetic layer and a second ferromagnetic layer both are separated by a first nonmagnetic metal layer, a hard magnetic layer formed so as to contact to the second ferromagnetic layer, and a third ferromagnetic layer formed on the hard magnetic layer via a second nonmagnetic metal layer for shutting off exchange coupling and coupled to the second ferromagnetic layer and the hard magnetic layer by static magnetic combination.

Growing community of inventors

Kawasaki, Japan

Hitoshi Kishi