Hitachi High-tech Corporation

Hitoshi Kamoshida

Hisayuki Takasu

Atsushi Kamino

Shota Aida

Toru Iwaya

Megumi Nakamura

There is provided an ion milling apparatus that can enhance reproducibility of ion distribution. The ion milling apparatus includes an ion source, a sample stageon which a sample processed by radiating a non-convergent ion beam from the ion sourceis placed, a drive unitthat moves a measurement member holding sectionholding an ion beam current measurement memberalong a track located between the ion source and the sample stage, and an electrodethat is disposed near the track, in which a predetermined positive voltage is applied to the electrode, the ion beam current measurement memberis moved within a radiation range of the ion beam by the drive unit, in a state in which the ion beam is output from the ion sourceunder a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement memberis measured.

Ion milling device

Provided is an ion milling apparatus capable of enhancing reproducibility of an ion distribution. The ion milling apparatus includes: an ion source; a sample stageon which a sample to be processed by being irradiated with an unfocused ion beam from the ion sourceis placed; and a measurement member holding unitthat holds an ion beam current measurement member. A covering materialis provided so as to cover at least a surface of the measurement member holding unitand the sample stagefacing the ion source. A material of the covering materialcontains, as a main component, an element having an atomic number smaller than that of an element of a material of a structure on which the covering material is provided. The ion beam current measurement memberis moved in an irradiation range of the ion beam on a trajectory, which is located between the ion source and the sample stage, in a state where the ion beam is output from the ion sourceunder a first irradiation condition, and an ion beam current flowing when the ion beam current measurement memberis irradiated with the ion beam is measured.

The invention provides an ion milling device capable of cross-sectional milling on an all-solid-state battery while reducing an occurrence of a short circuit due to a redeposition film. The ion milling device includes a sample stageon which a sampleis placed, an ion sourceconfigured to emit an unfocused ion beamtoward the sample, a stage controllerconfigured to cause the sample stage to perform a swing operation centered on a swing axis Sset to be orthogonal to an ion beam center Bof the ion beam, and cause the sample stage to perform a sliding operation along a line of intersection between a plane (YZ plane) including the ion beam center and perpendicularly intersecting the swing axis and a sample placement surface of the sample stage, in which the stage controller causes, in a first mode operation, the sample stage to perform the swing operation and the ion source to emit the ion beam to mill the sample, and causes in a second mode operation, the sample stage to perform the sliding operation and the ion source to emit the ion beam to remove sputter particles adhered again to the sample in the first mode operation.

Ion milling device and milling processing method using same

Provided is an ion milling device capable of improving the reproducibility of an ion distribution. An ion milling device includes: an ion source (); a sample stage () on which a sample () to be processed by being irradiated with an unfocused ion beam from the ion source () is placed; and a drive unit () configured to be arranged between the ion source () and the sample stage (), and to move a linear ion beam measuring member () extending in a first direction to a second direction orthogonal to the first direction, in which the drive unit () moves the ion beam measuring member () within an emission range of the ion beam in a state where the ion beam is outputted from the ion source () under a first emission condition, and an ion beam current flowing through the ion beam measuring member () is measured by irradiating the ion beam measuring member () with the ion beam.

By irradiating a sample with an unfocused ion beam, processing accuracy of an ion milling device for processing a sample or reproducibility accuracy of a shape of a processed surface is improved. Therefore, the ion milling device includes a sample chamber, an ion source position adjustment mechanism provided at the sample chamber, an ion source attached to the sample chamber via the ion source position adjustment mechanism and configured to emit an ion beam, and a sample stage configured to rotate around a rotation center. When a direction in which the rotation center extends when an ion beam center of the ion beam matches the rotation center is set as a Z direction, and a plane perpendicular to the Z direction is set as an XY plane, the ion source position adjustment mechanism is capable of adjusting a position of the ion source on the XY plane and a position of the ion source in the Z direction.

Growing community of inventors

Tokyo, Japan

Hitoshi Kamoshida