Kabushiki Kaisha Tokai Rika Denki Seisakusho

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Kabushiki Kaisha Tokai Rika Denki

Tokai-rika-denki Seishakusho Kabushiki Kaisha

Hitoshi Iwata

Kenichi Kinoshita

Yasushi Nishibe

Koichi Itoigawa

Masakata Kanbe

Makoto Murate

Yasuo Imaeda

Katsuya Kogiso

Katsuhiro Minami

Fumihito Arai

Toshio Fukuda

Yoshiharu Kawarazaki

Koichi Jinkai

Hisashi Hirose

Shigeru Iguchi

Shigekazu Yasuda

Hisahiro Ando

Toshimasa Yamamoto

Keisuke Imai

Yasutaka Watanabe

Kouichi Itoigawa

Takashi Suzuki

Masahiro Taniguchi

Makoto Okada

Akio Numazawa

Tatsuya Ishida

Kanichi Tanaka

Tomoyoshi Matsuba

An epitaxial growth layer, an oxide film, and a passivation film are formed on a silicon substrate. Except for an opening formed on a part of the passivation film, the upper surface of the passivation film is covered with a metal protective film made of tungsten (W). With the silicon substrate immersed in a high-concentration hydrofluoric aqueous solution, anodization is performed with the silicon substrate as an anode and the metal protective film as a counter electrode.

Method for anodizing silicon substrates for surface type acceleration sensors

A two-axis yaw rate sensor ( ) includes a vibration ring ( ) and a ring support plate for supporting the vibration ring ( ). The vibration ring ( ) includes first to fourth vibrating drive surfaces ( ) arranged in turn in a circumferential direction and narrow portions ( ) located between the adjacent drive surfaces ( ). The first and the third drive surfaces ( ) are opposed to one another on the axis Y passing through the center of the vibration ring ( ). The second and the fourth drive surfaces ( ) are opposed to one another on the axis X passing through the center of the vibration ring ( ). The axis Y is substantially perpendicular to the axis X. A PZT film ( ) is formed on the drive surfaces ( ) and vibrates the drive surfaces ( ) in a radial direction of the vibrating ring ( ). A weight ( ) is coupled to a coupling portion ( ) of each drive surface ( ) and vibrates in a direction substantially perpendicular to the vibrating direction of the vibrating surfaces ( ). Detection electrode films ( ) are formed on the coupling portions ( ) and detect the deformation of the corresponding coupling portions ( ).

Two-axis yaw rate sensor

A method for anodizing silicon substrate includes forming an n-type silicon embedded layer ( ) made of n-type silicon on a predetermined area of a first surface of the p-type single crystal silicon substrate ( ). N-type silicon layers ( ) are formed on the upper surface of the p-type single crystal silicon substrate ( ) and on the n-type silicon embedded layer ( ). Silicon diffusion layers ( ) containing high-concentration p-type impurities are formed on predetermined areas of the n-type silicon layers ( ) to contact the n-type silicon embedded layer ( ). An electrode layer ( ) is formed on the lower surface of the p-type silicon substrate ( ). The anode of a DC power source ( ) is connected to the electrode layer ( ), and the cathode is connected to a counter electrode ( ), which is opposed to the p-type silicon substrate ( ). A current is intensively applied to an area corresponding to an opening ( ) of the n-type silicon layer ( ) in a direction from the lower surface to the upper surface of the p-type single crystal silicon substrate ( ), which makes the area porous.

Method of anodizing silicon substrate and method of producing acceleration sensor

An oscillation gyro ( ) including a stainless steel base member ( ) which is a quadratic prism, wherein the base member ( ) has through holes ( ) extending in the directions crossing at right angles at the upper and lower portions thereof respectively, and further includes slide plates ( ) constituting a parallel plate portion ( ) and slide plates ( ) constituting a parallel plate portion ( ). Preferably, a titanium film ( ) is formed by sputtering on each of the outer side surfaces of the parallel plate portions ( ), and a thin PZT film ( ) is formed on the entire outer surface of the titanium film ( ). Pairs of electrode films ( ) of aluminum are formed on the respective thin PZT films ( ) up and down. The respective electrode films ( ) have a thickness of several um and the same area. Pads ( ) are formed at the lower ends of the base member ( ) serving as fixed ends, and are connected to extension portions ( ) extending from the electrode film ( ). Lead wires ( ) connected to the pads ( ) suppress a change in the rigidity of the parallel plate portions ( ) caused by the connection of lead wires.

Oscillation gyro equipped with thin PZT film

A first p-type silicon layer ( ) is formed as a buried layer in a p-type single crystal silicon substrate ( ), and an n-type silicon layer ( ) is formed on the upper side of the silicon substrate ( ). A second p-type silicon layer ( ) for forming an opening is defined in the n-type silicon layer ( ), and a metal protecting film ( ) is formed on the upper side of the n-type silicon layer ( ). An electrode layer ( ) is formed on the rear side of the silicon substrate ( ) via an oxide film (17). The electrode layer ( ) and the silicon substrate ( ) are electrically connected to each other via a connecting opening ( ) at portions aligned with the first p-type silicon layer ( ). After a positive terminal and a negative terminal of a DC power source (V) are connected to the electrode layer ( ) and to a counter electrode ( ) respectively, a voltage is applied between the electrode layer ( ) and the counter electrode ( ) to carry out anodization.

Semiconductor device and method of anodization for the semiconductor device

A device for control of driving a power window automatically holds a switch in its operated state to continuously raise or lower a door glass by continuously rotating a motor. The device stops the motor when a locking current flows through the motor upon complete closure or complete open of the door glass. The device includes a thermistor inserted in a signal line through which current flowing through the motor passes. The thermistor is disposed in the vicinity of the motor. When a locking current flows through the motor, the current also flows through the thermistor so that the thermistor is heated and shuts off the current flowing therethrough so as to stop the supply of electricity to the motor when the temperature of the thermistor exceeds a predetermined value. Also, the thermistor has a function of shutting off current flowing therethrough when receiving heat radiated from the motor due to over current.

Thermistor actuated device for controlling the drive of a power window

A rotation detector that detects rotational position with high precision. The rotation detector includes a rotor having a shaft. Projections are located at predetermined intervals on the periphery of the rotor and extend in an axial direction. The rotation detector further includes magnets and magnetism detecting elements respectively detecting magnetism of the magnets. At least one of the magnets and the detecting elements are arranged between the projections and the shaft at predetermined intervals.

Rotation detector operable to measure magnetism direction change

A computer monitoring device is provided which ensures safe operation, even when a power supply voltage supplied to a microcomputer decreases and causes the microcomputer to enter an abnormal state. When the power supply voltage decreases, the power supply circuit is switched to an auxiliary power supply which supplies power to a microcomputer monitoring circuit and signal processing circuit via a diode. The microcomputer monitoring circuit in turn provides a reset signal for the computer so that it can continue to operate, which ensures safe operation of the computer. The computer monitoring device is particularly useful in a power window system for a vehicle.

Computer monitoring device

A parallel plate structure (,) is provided with a pair of bimorph piezoelectric elements (,) and prismatic insulation spacers (,) inserted between the piezoelectric elements (,) at the upper and lower ends thereof for cementing the piezoelectric elements (,) together via the spacers (,). Each piezoelectric element (,) comprises a planar base material (,) of titanium, PZT thin films (,) formed on both sides of the base material (,) by the hydrothermal method, and electrode films (,) formed on the PZT thin films (,). The base material (,) is 20 &mgr;m thick and the PZT thin films (,) are several pm thick, while the aluminum electrode films (,) are several um thick.

Parallel plate structure provided with PZT thin-film bimorph and method of fabrication thereof

A sensor mounted on the distal end of an intra-corporeal catheter detects pressure applied thereto. The sensor includes a chip that is deformable in accordance with pressure applied thereto, strain gauges mounted on the chip, a sensing plate, a projection, a cap and a tube. A cover covers the chip, the sensing plate, the projection and the cap and gives a smooth tapered shape to the catheter's distal end. The projection and the cap transmit pressure applied to the catheter's distal end to the sensing plate and tilt the sensing plate in accordance with the pressure. The strain gauges issue detection signals according to the degree and the direction of the tilting. The pressure applied to the catheter's distal end is detected based on the issued signals.

Sensor for intra-corporeal medical device and a method of manufacture

An acceleration sensor with a diaphragm sensor chip has lead frames. One of the lead frames has a die pad. The sensor chip is flexibly adhered to the die pad by adhesive. The sensor chip has a diaphragm. The sensor chip outputs signals in accordance with flexure of the diaphragm. The lead frames are molded by a mold member. The mold member define a space about the sensor chip. The coefficient of linear expansion of the mold member is between 1.4&times;10,/&deg; C. and 1.8&times;10,/&deg; C., and the modulus of elasticity of the mold member is between 100&times;10,kg/cm,and 130&times;10,kg/cm,. Use of the mold member minimizes the ratio of change of sensitivity due to temperature changes, which improves the temperature characteristics of the sensor.

Sensor with diaphragm sensor chip

An oscillatory gyroscope having an improved detecting sensitivity. The oscillatory gyroscope includes an elastic metal body in the form of a rectangular column having first to fourth surfaces. The elastic metal body includes a distal portion having a distal through hole extending from the second surface to the fourth surface and a proximal portion having a second through hole extending from the first surface to the third surface. Two first ferroelectric substance films are provided on the first and third surfaces in the distal portion. Two second ferroelectric substance films are provided over the second and fourth surfaces in the proximal portion. First and second electrodes are provided on each of the first ferroelectric substance films, and third and fourth electrodes are provided on the respective second ferroelectric substance films. Voltages of reverse polarities are applied to the first and second electrodes. The positions of the first and second electrodes on the first surface are reversed with respect to those of the third surface.

Parallel plate type oscillatory gyroscope

A highly sensitive oscillatory gyroscope that includes an elastic metal body in the form of a rectangular column having first to fourth sides. The elastic metal body includes a pair of end segments located at its ends and a pair of middle segments located at an upper middle portion and a lower middle portion of the elastic metal body. Each end segment has an opening extending from the second side to the fourth side, and each middle segment has an opening extending from the first side to the third side. A first ferroelectric substance film is provided on each of the first and third sides at the end segments. A second ferroelectric substance film is provided on each of the second and fourth sides at the middle segments. First and second electrodes are provided on each first ferroelectric substance film at each end segment. Third and fourth electrodes are provided on each second ferroelectric substance film at each middle segment.

A catheter includes a longitudinally extending catheter tube to be inserted into a body. A plurality of sensing portions are arranged in the catheter tube for detecting at least two types of pressures acting on the catheter when inserted into the body. Each sensing portion is arranged along the longitudinal direction of the catheter tube. A silicone gel transmits the two types of pressures acting in the body to each sensing portion. The two types of pressures act on each sensing portion in a radial direction of the catheter tube by way of the silicone gel.

Catheter and sensor having pressure detecting function

A sensor mechanism-equipped catheter is easy to produce, suitable for a diameter reduction, and achieves a high sensing precision. In a catheter, a sensor assembly has a pressure-receiving piston, a pressure-transmitting silicon gel or oil and a pressure sensor chip, and is fitted to a distal end of a catheter tube. The sensor assembly detects a pressure change. The sensor assembly further has an outer tube that carries the piston at a distal end side thereof, and an inner tube carrying the sensor chip an end side thereof. A space formed in the outer tube, between the piston and the sensor chip, is filled with the silicone gel or oil. A pressure barrier wall is provided for blocking flow of the silicone gel toward the catheter tube. The sensor chip is fixed in the sensor assembly by a joining member which divides an interior space of the sensor assembly into a distal end-side region and a base end-side region. The joining member may also serve as the pressure barrier wall.

Growing community of inventors

Aichi, Japan

Hitoshi Iwata