Kabushiki Kaisha Toshiba

Sony Corporation

Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Hitoshi Ito

Haruo Okano

Nobuo Hayasaka

Yoshiaki Fukuzumi

Hideaki Aochi

Hiroyasu Tanaka

Masaru Kito

Ryota Katsumata

Masaru Kidoh

Megumi Ishiduki

Yosuke Komori

Akihiro Nitayama

Rempei Nakata

Yasuyuki Matsuoka

Eiji Ito

Riichirou Aoki

Takahiko Moriya

Yukio Nishiyama

Takahito Nagamatsu

Akemi Satoh

Masao Toyosaki

Kyoichi Suguro

Kazuya Nagaseki

Shinji Himori

Hiroyuki Yamasaki

Syuji Mochizuki

A non-volatile semiconductor storage device has a memory string including a plurality of electrically rewritable memory cells connected in series. The non-volatile semiconductor storage device also has a protruding layer formed to protrude upward with respect to a substrate. The memory string includes: a plurality of first conductive layers laminated on the substrate; a first semiconductor layer formed to penetrate the plurality of first conductive layers; and an electric charge storage layer formed between the first conductive layers and the first semiconductor layer, and configured to be able to store electric charges. Each of the plurality of first conductive layers includes: a bottom portion extending in parallel to the substrate; and a side portion extending upward with respect to the substrate along the protruding layer at the bottom portion. The protruding layer has a width in a first direction parallel to the substrate that is less than or equal to its length in a lamination direction.

Non-volatile semiconductor storage device and method of manufacturing the same

A nonvolatile semiconductor storage device has a plurality of memory strings in which a plurality of electrically rewritable memory cells are connected in series. The memory string has a columnar semiconductor layer extending in a direction perpendicular to a substrate; a conductive layer formed so as to sandwich a charge storing layer in cooperation with the columnar semiconductor layer; and a metal layer formed so as to be in contact with the top face of the conductive layer.

Nonvolatile semiconductor storage device including a plurality of memory strings

An MIS transistor includes a gate electrode located to intersect a device region of a semiconductor substrate isolated by a device isolation region, and source and drain regions formed in the semiconductor substrate at both sides of the gate electrode region and elevated source and drain located above the source and drain regions. A gate length of the gate electrode at a boundary between the device isolation region and the device region is longer than the gate length at a central portion of the device region.

Semiconductor device having a shaped gate electrode and method of manufacturing the same

A semiconductor device disclosed herein comprises: an element isolation insulator which is formed on the surface side of a semiconductor substrate to provide electrical insulation from other elements, a height of a surface of the element isolation insulator being equal to or lower than that of a surface of the semiconductor substrate; a stopper which is formed of a material different from that of the element isolation insulator and which is at a predetermined distance from the semiconductor substrate so as to protrude from the surface of the element isolation insulator; and an elevated source/drain which is formed on a source region and a drain region so as to be elevated from the surface of the semiconductor substrate.

Semiconductor device having elevated source/drain on source region and drain region

A semiconductor memory incorporates cylinder-type stacked capacitors. Each capacitor has a lower electrode and an upper electrode facing each other via a dielectric film. The lower electrode of each capacitor is supported by a beam-like insulator at a side portion of the electrode, the side portion being apart from a lower edge of the lower electrode.

Semiconductor memory and method of producing the same

Semiconductor memory including forming beams connecting the capacitors

A semiconductor device with a dummy wiring pattern. The semiconductor device is capable of stabilizing the adhesively bonding state of a semiconductor element in which a semiconductor element is mounted on the printed circuit board. The printed circuit board includes a wiring pattern and an element mounting portion on which the semiconductor element is to be mounted and is fixed using an adhesive, wherein a dummy wiring pattern having a thickness nearly equal to that of the wiring pattern is provided on the element mounting portion and the semiconductor element is mounted on the dummy wiring pattern via the adhesive.

Printed circuit board and semiconductor device using the same

Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:

Semiconductor device

Method of forming a thin film

Method of manufacturing silicon oxide film containing fluorine

In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.

Method for forming thin film of refractory material

A semiconductor device is produced in such a manner that light having a wavelength in a range of 400 to 1000 nm is irradiated on a substrate so as to excite bonding hand of a material gas into a vibrating condition, and a thin film is formed on the substrate in accordance with a chemical vapor deposition method.

Growing community of inventors

Kanagawa, Japan

Hitoshi Ito