Mitsubishi Materials Corporation

Other

Takasago Netsugaku Kogyo Kabushiki Kaisha

Casio Computer Co., Ltd.

Nihon Kohden Corporation

Hamamatsu Photonics Kabushiki Kaisha

Kochi Industrial Promotion Center

Takasago Netsugaku Kogyo Kabushiki Kaisa

Hitoshi Inaba

Noriaki Nagatomo

Hiroshi Tanaka

Tadahiro Ohmi

Toshiaki Fujita

Kazutaka Fujiwara

Kazuta Takeshima

Yoshiyuki Tanaka

Kazuo Saito

Naoki Mori

Yasuyuki Shirai

Sadao Kobayashi

Yoshihide Wakayama

Masami Tanishima

Tomoyuki Ikedo

Yoshihiro Takayanagi

Isao Terada

Takahiro Nakamoto

Naoto Kitahara

Masahiro Echigo

Kazuhito Nishimura

Shunichi Sato

Kouichirou Harada

Hiromu Itoh

Hideo Hanaoka

Heisen Ryu

Nobuya Saruwatari

Yoshinori Okubo

Yoshiyuki Yagi

Takashi Taniguchi

Toshihisa Okabe

Kikuji Kobayashi

Yoshihisa Sawada

Katsumasa Imai

Yasuhiro Shatou

Kazutaka Hujiwara

Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti&#x2014;Al&#x2014;N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti&#x2014;Al&#x2014;N thermistor material, and the pair of pattern electrodes has a Ti&#x2014;N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.

Temperature sensor and method for producing same

Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TiAlN(where 0.70&#x2264;y/(x+y)&#x2264;0.95, 0.4&#x2264;z&#x2264;0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

Metal nitride film for thermistor, process for producing same, and thermistor sensor of film type

Provided is a temperature sensor which does not easily cause a crack in a Ti&#x2014;Al&#x2014;N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film, a thin film thermistor portionmade of a Ti&#x2014;Al&#x2014;N-based thermistor material formed on the insulating film, a pair of pattern electrodesformed on the insulating film with a pair of opposed electrode portionsbeing arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.

Temperature sensor

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAlN(where 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.4&#x2266;z&#x2266;0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Metal nitride material for thermistor, method for producing same, and film type thermistor sensor

The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.

Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TiAl(NO)(where 0.70&#x2266;y/(x+y)&#x2266;0.95, 0.45&#x2266;z&#x2266;0.55, 0&#x3c;w&#x2266;0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Metal nitride material for thermistor, method for producing same, and film thermistor sensor

The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.

Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion includes an insulating film having a strip shape, a thin film thermistor portion pattern-formed at the center portion of the surface of the insulating film, a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion with facing each other and a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film.

A biological information monitoring apparatus operable to receive biological information measured by a detector adapted to be attached to a patient, and operable to display the biological information on a display, includes: a first display controller which displays an alarm on the display; and a second display controller which displays, on the display, first information which responses to the displayed alarm.

Biological information monitoring apparatus with particular display features

The present invention aims to suppress calorific value and prolong a lifetime of an apparatus that generates soft X-rays. Thus, the present invention provides a static elimination apparatus that includes an emitter as an electron emitting portion and a target, in which a thin film formed of diamond particles each having a particle size of 2 nm to 100 nm is formed on a surface of the emitter. The thin film has a diamond XRD pattern in an XRD measurement and, in a Raman spectroscopic measurement, a ratio of an sp3 bonding component to an sp2 bonding component within the film of 2.5 to 2.7:1. When a DC voltage is applied to the emitter, with a threshold electric field intensity of 1 V/&#x3bc;m or less, electrons larger in number than the prior art are emitted from the emitter and moreover, a temperature of the emitter is hardly increased, thus obtaining a longer lifetime.

Soft X-ray generation apparatus and static elimination apparatus

An air cooling device includes at least one cooling unit which includes an oblique honeycomb having front, rear, upper, and lower openings and disposed so that air to be cooled is introduced into the front opening and cooled air is discharged from the rear opening, a cooling water supply means which supplies cooling water to the upper opening of the oblique honeycomb, and a water receiving section which receives discharge water discharged from the lower opening of the oblique honeycomb, and a blower means which introduces air to be cooled into the front opening of the oblique honeycomb and allows cooled air to be discharged from the rear opening of the oblique honeycomb, wherein the height of one oblique honeycomb in the cooling unit is 200 to 800 mm. The air cooling device has high thermal efficiency, a small liquid-gas ratio, and a small pressure drop, and is capable of saving space and energy.

Air cooling device and air cooling method

A chip-type surge absorber and method for producing same, wherein the chip-type surge absorber includes an insulating substrate in the shape of a rectangular parallelepiped; an insulating hermetic cap open at a bottom side thereof, for forming, together with the insulating substrate, a box-shaped hermetically sealed cavity filled with a discharge gas; terminal electrodes disposed at both ends in the hermetically sealed cavity; a pair of discharge electrodes which are formed in the hermetically sealed cavity such that a discharge gap is formed between the discharge electrodes and such that the discharge electrodes are electrically connected to corresponding terminal electrodes; and connection surfaces for increasing the connection area for the connection between the discharge electrodes and the terminal electrodes.

Chip-type surge absorber and method for producing the same

Apparatus and method for producing gaseous ions by use of x-rays, and

An electrified object contact material characterized in that an oxide film formed in a high purity oxidizing atmosphere with a thickness from several tens to 100 .ANG. is formed at least in a section directly contacting an electrified object. By using the contact component according to the present invention, the electric potential of a wafer can always be suppressed to 50 V or less, and moreover, contamination of a wafer (especially by a metallic material) can completely be eliminated.

Electrified object contact component

Neutralizing apparatus for charged body

Growing community of inventors

Naka, Japan

Hitoshi Inaba