Tosoh Corporation

Hitoshi Iigusa

Hideto Kuramochi

Tetsuo Shibutami

Ryo Akiike

Kimiaki Tamano

Kenji Omi

Masami Mesuda

Toshio Inase

Masanori Ichida

The present invention provides a complex oxide sintered bodywherein Zr/(In+Zr+Y) is 0.05 to 4.5 at % and Y/(In+Zr+Y) is 0.005 to 0.5 at % in an atomic ratio when indium, zirconium, and yttrium are designated by In, Zr, and Y, respectively. Moreover, the present invention provides a sputtering target including the complex oxide sintered bodyand a transparent conductive oxide film obtained by sputtering the sputtering target.

Complex oxide sintered body, sputtering target, transparent conductive oxide film, and method for producing same

There is provided a zinc oxide sintered compact with a zirconium content of 10 to 1000 ppm, and a sputtering target containing the zinc oxide sintered compact. There is also provided a zinc oxide thin-film having a zirconium content of 10 to 2000 ppm and a resistivity of 10 &#x3a9;&#xb7;cm or greater.

Zinc oxide sintered compact, sputtering target, and zinc oxide thin film

To provide a composite oxide sintered body from which an oxide transparent conductive film having lower light absorption properties in a wide wavelength region and having a low resistance can be obtained, and an oxide transparent conductive film. A composite oxide sintered body containing indium, zirconium, hafnium and oxygen, wherein the atomic ratio of the elements constituting the sintered body satisfies the following formulae, where In, Zr and Hf are respectively contents of indium, zirconium and hafnium:Zr/(In+Zr+Hf)=0.05 to 4.5 at %Hf/(In+Zr+Hf)=0.0002 to 0.15 at %.

Composite oxide sintered body and oxide transparent conductive film

A sintered composite oxidecomposed mainly of zinc, aluminum, titanium and oxygen, the atomic ratio of the elements satisfying the following equations (1) to (3), the sintered composite oxidecomprising particles having a hexagonal wurtzite structure containing zinc oxide as the major component and having a mean particle size of no greater than 20 &#x3bc;m, and particles having a ZnTiO-like structure and/or ZnTiO-like structure containing aluminum and titanium and having a mean particle size of no greater than 5 &#x3bc;m, and containing no particles with a spinel oxide structure of zinc aluminate with zinc and aluminum in solid solution, and a manufacturing method for the same.(Al+Ti)/(Zn+Al+Ti)=0.004-0.055&#x2003;&#x2003;(1)Al/(Zn+Al+Ti)=0.002-0.025&#x2003;&#x2003;(2)Ti/(Zn+Al+Ti)=0.002-0.048&#x2003;&#x2003;(3)[In the equations, Al, Ti and Zn represent the contents (atomic percents) of aluminum, titanium and zinc, respectively.]

Sintered composite oxide, manufacturing method therefor, sputtering target, transparent conductive oxide film, and manufacturing method therefor

A transparent conductive zinc oxide based film according to the present invention contains Ti, Al and Zn in such a proportion that satisfies the following formulae (1), (2) and (3) in terms of atomic ratio, and has a plurality of surface textures different in size on a surface, wherein a center-line average surface roughness Ra of the surface of the transparent conductive film is 30 nm to 200 nm, and an average value of widths of the surface textures is 100 nm to 10 &#x3bc;m.0.001&#x2266;Ti/(Zn+Al+Ti)&#x2266;0.079.&#x2003;&#x2003;(1)0.001&#x2266;Al/(Zn+Al+Ti)&#x2266;0.079&#x2003;&#x2003;(2)0.010&#x2266;(Ti+Al)/(Zn+Al+Ti)&#x2266;0.080&#x2003;&#x2003;(3)

Transparent conductive zinc oxide film, process for production thereof, and use thereof

A sintered complex oxide comprising metal oxide particles (a) having a hexagonal lamellar structure and containing zinc oxide and indium, and metal oxide particles (b) having a spinel structure and containing a metal element M (where M is aluminum and/or gallium), wherein the mean value of the long diameter of the metal oxide particles (a) is no greater than 10 &#x3bc;m, and at least 20% of the metal oxide particles (a) have an aspect ratio (long diameter/short diameter) of 2 or greater, based on the number of particles.

Sintered complex oxide, method for producing sintered complex oxide, sputtering target and method for producing thin film

A phase-change optical recording medium which attains a high erasability in overwriting at a high linear velocity and has high recording sensitivity, excellent OW cycling characteristics, and excellent weatherability. The phase-change optical recording medium comprises a substrate and formed thereon a multilayered film comprising a protective layer and a recording layer and is that information is recorded/erased based on reversible phase changes in the recording layer between a crystalline phase and an amorphous phase, wherein the protective layer is a film made of an oxide of tantalum or aluminum and at least one carbide, and the content of the carbide is from 1 to 40 mol %.

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Ayase, Japan

Hitoshi Iigusa