Fujitsu Quantum Devices Limited

Hitoshi Haematsu

Kazutaka Inoue

A source electrode, a gate electrode, and a drain electrode formed on a front face active region of a semiconductor substrate in a shape of teeth of a comb are covered with an insulating film such as polyimede etc., as well as all of the upper surface and the side surfaces of the insulating film are covered with a metal protective film. Via hole receiving pads connected to the source electrode, the gate electrode, and the drain electrode are respectively connected to bonding pads on a reveres face of the semiconductor substrate through via holes.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a gate electrode on a semiconductor substrate, a source electrode and a drain electrode that are provided on the semiconductor substrate, the gate electrode being interposed between the source electrode and the drain electrode, an insulating layer covering the gate electrode, and a source wall that extends from the source electrode and passes over the gate electrode, an end surface of the source wall being interposed between the gate electrode and the drain electrode and being located in a position lower than a top surface of the gate electrode.

Semiconductor device and method of fabricating the same

A gate electrode is in Schottky contact with the surface of a semiconductor substrate and extends in a first direction. A drain electrode is disposed on one side of the gate electrode, spaced apart from the gate electrode by some distance, and is in ohmic contact with the semiconductor substrate. A source electrode is constituted of a main part, an overhanging part and a shielding part. The main part is in ohmic contact with the semiconductor substrate in the region across the gate electrode from the drain electrode. The shielding part is disposed between the gate electrode and the drain electrode and extends in the first direction. The overhanging part passes over the gate electrode and connects the shielding part with main part. The size of the overhanging part along the first direction is smaller than the side of the shielding part. It becomes possible to sufficiently shield the gate electrode from the drain electrode while suppressing an increase of the parasitic capacitance between the source and gate electrodes.

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Yamanashi, Japan

Hitoshi Haematsu