Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Hitoshi Doi

Naoto Niisoe

Toshihiko Yano

Rieko Nishio

Hiroe Ogata

In a solid-state imaging device, a light-shielding filmis formed of at least one of a high melting point metal film or a high melting point metal compound film. The surface of the light-shielding filmis constituted by an amorphous silicon film. Instead of the amorphous silicon film, the surface of the light-shielding film may be covered with any one of a high melting point metal film containing silicon, a high melting point metal silicide film and an oxide film. Thus, the adherence between the light-shielding filmand the resist can be increased and the resist can be prevented from being peeled from the light-shielding film, and thus a solid-state imaging device with a high yield even with small pixels and a method for producing the same can be provided.

Solid-state imaging device and method for producing the same

On a light shielding film, an anti-oxidation layercovering at least the light shielding filmis formed. The anti-oxidation layeris formed under a condition which does not oxidize a surface of the light shielding film. The anti-oxidation layeris formed of a high melting point metal compound film having a light shielding property or an insulating film having a light transmissive property. Thus, the scattering ratio of the incident light at the surface of the light shielding filmcan be uniform among all the pixels, and as a result, a solid state imaging device having suppressed sensitivity non-uniformity can be realized. Since the surface of the light shielding filmis not oxidized, the thickness of the light shielding filmcan be reduced. Thus, the present invention can comply with the demand for size reduction of the pixels.

Growing community of inventors

Tonami, Japan

Hitoshi Doi