Fuji Electric Co., Ltd.

Fuji Xerox Co., Ltd.

Sony Corporation

Tachi-S Co., Ltd.

Denso Corporation

Oki Electric Industry Co., Ltd.

Other

Fuji Electric Device Technology Co., Ltd.

Tokyo Electron Limited

Sumida Corporation

Fuji Electric Holdings Co., Ltd.

Electronic Navigation Research Institute, an Independent Administrative Institution

Nihon Genma Mfg. Co., Ltd.

Hitoshi Abe

Seiji Momota

Takeshi Fujii

Motoyuki Takaai

Eriko Tamaru

Yuichi Ueno

Yasushi Niimura

Osamu Akimoto

Toshihiko Orii

Tatsuhiko Fujihira

Koh Yoshikawa

Takashi Kobayashi

Kazunori Horikiri

Makoto Asai

Takashi Shiigi

Tetsutaro Imagawa

Masaki Koyama

Masanori Inoue

Noriaki Yao

Toshikazu Suzuki

Kenji Kouno

Yasushi Kato

Tomohiro Nakamori

Hayato Iwamoto

Seiji Noguchi

Hiromitsu Tanabe

Hiroshi Miyata

Toshiro Kisakibaru

Hidenori Takahashi

Naoki Ando

Isao Honbori

Naoya Shimada

Kouichi Moroi

Takayuki Toshima

Takeyoshi Nishimura

Yoshiyuki Nakamura

Yasuhiko Onishi

Satoshi Hashimoto

Naoyuki Egusa

Kakuichi Shiomi

Tsutomu Takamori

Makoto Nomura

Tomoyuki Yamada

Yoshiki Watanabe

Koushi Kawamoto

Toshiyuki Matsui

Takahiko Suzuki

Naoyuki Makita

Kengo Kataoka

Yusuke Kano

Yuki Takano

Tomoyuki Obata

Susumu Kobayashi

Masaki Tamura

Takafumi Kojima

Masatomi Inagaki

Michiko Takaoka

Toshihiko Mochida

Masaki Tsukada

Koichi Hagio

Junichi Takenaka

Hirohisa Koriyama

Keigo Yamauchi

Naoko Kurata

Michiko Okiyama

Shodai Nakayama

Tooru Yokokura

Hirotake Kudo

Koichi Izumida

Toshiyuki Moribayashi

A semiconductor device includes a plurality of first trenches each having a stripe-shape, extending in parallel to each other, a first mesa region, a second mesa region, a first interlayer insulating film covering the first mesa region and the second mesa region, and a first contact hole penetrating the first interlayer insulating film to the first mesa region, and extending along a longitudinal direction of the first trenches. The first mesa region includes emitter regions of a first conductivity type periodically provided along the longitudinal direction of the first trenches in a plan view, contact regions of a second conductivity type provided such that each of the emitter regions is interposed between the contact regions along the longitudinal direction in the plan view, and a base region of the second conductivity type provided immediately below the emitter regions and the contact regions.

Semiconductor device

Between a source electrode () of a main device () and a current sensing electrode () of a current detection device (), a resistor for detecting current is connected. Dielectric withstand voltage of gate insulator () is larger than a product of the resistor and maximal current flowing through the current detection device () with reverse bias. A diffusion length of a p-body region () of the main device () is shorter than that of a p-body () of the current detection device (). A curvature radius at an end portion of the p-body region () of the main device () is smaller than that of the p-body () of the current detection device (). As a result, at the inverse bias, electric field at the end portion of the p-body region () of the main device () becomes stronger than that of the p-body region () of the current detection device (). Consequently, avalanche breakdown tends to occur earlier in the main devicethan the current detection device ().

A semiconductor device includes: a drift layer; a mesa region that is interposed between adjacent trenches on the drift layer; a gate electrode buried in each trench through a gate insulating film; a base region of buried in the mesa region; a plurality of emitter regions that are periodically buried in a surface layer portion of the base region along a longer direction of the trench; and contact regions that are alternately buried in the longer direction together with the emitter regions such that each emitter region is interposed between the contact regions, are deeper than the emitter region, and extend immediately below the emitter region so as to be separated from each other, a contact-region contact-width in the longer direction defined in a surface of the contact region being less than an emitter-region contact-width in the longer direction defined in a surface of the emitter region.

Semiconductor device and method for manufacturing the same

There is provided a head-rest of a car sheet which is configured to includes: a skin configured to cover a surface of the head-rest; a foamed material filled in the head-rest covered by the skin; and a stay extending to an outside from the skin in which the foamed material is filled, wherein the head-rest has a gate shape by indenting a center portion of a lower surface of the head-rest, and a groove portion is formed at the indented center portion of the gate shape by making end portions of the skin abut against each other, and members which are softer than the skin are seamed to the respective end portions of the skin which abut against each other in the groove portion.

Head-rest of a car seat

In a surface layer of a rear surface of the semiconductor substrate, an n-type cathode region and a p-type cathode region are each selectively provided. The n-type cathode region and the p-type cathode region constitute a cathode layer and are adjacent to each other along a direction parallel to the rear surface of the semiconductor substrate. The n-type cathode region and the p-type cathode region are in contact with a cathode electrode. In an n-type drift layer, plural n-type FS layers are provided at differing depths deeper from the rear surface of the semiconductor substrate than is the cathode layer. With such configuration, in a diode, a tradeoff relationship of forward voltage reduction and reverse recovery loss reduction may be improved and soft recovery may be realized.

Semiconductor device having semiconductor regions with an impurity concentration distribution which decreases from a respective peak toward different semiconductor layers

Among trenches disposed in a striped-shape parallel to a front surface of a semiconductor substrate, a gate electrode at a gate potential is provided in a gate trench, via a gate insulating film; and in a dummy trench, a dummy gate electrode at an emitter electric potential is provided, via a dummy gate insulating film. Among mesa regions, in a first mesa region functioning as a MOS gate, a first p-type base region is provided in a surface region overall. In a second mesa region not functioning as a MOS gate, a second p-type base region is selectively provided at a predetermined interval, along a first direction. At least one of the trenches on each side of a mesa region is a gate trench and at at least one side wall of the gate trench, a MOS gate is driven. As a result, the ON voltage may be reduced.

Semiconductor device having semiconductor regions of different conductivity types provided at a predetermined interval along a first direction

A vehicle seat is provided which includes a protruding corner formed by joining a first surface and a second surface. The protruding corner includes a pad, a surface cover covering a surface of the pad, and a contour defining plate that is provided on a back side of the surface cover at a position corresponding to the second surface of the protruding corner, the contour defining plate defining the contour of the protruding corner. The contour defining plate has a first edge arranged along a top portion of the protruding corner and a second edge different from the first edge, the contour defining plate not being fixed to the surface cover at the first edge, but fixed to the surface cover at the second edge.

Vehicle seat

A vehicle seat includes: a pad including: a first pad part; a second pad part; a step portion formed along at least a part of the boundary; and a groove portion extending from the step portion into between the first and second pad parts over the whole length of the step portion; and a trim cover formed by sewing multiple skin pieces together, the skin pieces including: a first body configured to cover the surface of the first pad part following the surface of the step portion; a first gore configured to cover the surface of the step portion; a second body configured to cover the surface of the second pad part following the surface of the step portion; and a second gore jointed to the second body, wherein an edge of the first gore and an edge of the second gore are respectively stored in the groove portion.

The vehicle seat is configured to improve child seat mountability, and to prevent deterioration in appearance design when the child seat is demounted. The vehicle seat includes an anchor storage recess formed in a pad that constitutes the seat for storing an anchor to be engaged with an engagement member attached to a child seat. The anchor storage recess is covered with a skin material having a slit. The slit has an inverse T-like shape.

A seat cover includes: a surface member; and a pocket including: a bag part arranged on a back surface side of the surface member and sewn on a folded portion of the surface member folded toward the back surface side along an edge of a pocket opening; a bead part interposed between the bag part and the folded portion extending along at least one of a pair of longitudinal edges of the pocket opening, sewn on the folded portion and the bag part, and arranged to protruding into the pocket opening; and a core member inserted into the bead part, wherein: the bead part and the core member respectively include extension portions extending beyond a pair of lateral edges of the pocket opening in a longitudinal direction of the pocket opening; and the extension portions of the bead part and the core member are fixed to each other.

Seat cover and vehicle seat

A semiconductor device drive method achieves a balance between a lifetime and a detection sensitivity which are required for a temperature detection diode formed via an insulating film on a substrate on which an active element is formed. The semiconductor device drive method includes energizing the temperature detection diode with a constant current, the constant current having a current density value between an upper limit defined based on the lifetime of the temperature detection diode, and a lower defined based on a variation allowable voltage of an output voltage of the temperature detection diode with respect to a standard deviation.

Semiconductor device drive method

A semiconductor device includes: an interlayer insulating film covering: a cathode region and an anode region to form a pn junction with each other; a cathode electrode provided on the interlayer insulating film and connected to the cathode region through a first contact hole; and an anode electrode provided on the interlayer insulating film and connected to the anode region through a second contact hole. Among current paths in the cathode and anode regions, the current path in one of the cathode and anode regions that has a larger sheet resistance is shorter than the other current path, the current path in the cathode region extending from an interface of the pn junction to an end of the first contact hole closest to the interface, the current path in the anode region extending from the interface to an end of the second contact hole closest to the interface.

A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the plurality of trench gate structures including first trench gate structures respectively contributing to control of the element and second trench gate structures respectively not contributing to the control of the element, the semiconductor device including an electrode portion having a potential other than a gate potential, and an electrode pad that is disposed on a front face of a semiconductor substrate, wherein the electrode pad is used as a terminal to apply a predetermined voltage to gate insulator films, in screening that is executed by applying the predetermined voltage to the gate insulator films respectively in contact with the gate electrode connected to the electrode pad and that is executed before the electrode pad is short-circuited to the electrode portion.

A manufacturing method of a semiconductor device includes: depositing a thin film semiconductor layer on a semiconductor substrate with an insulating film therebetween, the insulating film having been formed on a surface of the semiconductor substrate; ion-implanting first impurity ions into the thin film semiconductor layer under a condition where a range of the first impurity ions becomes smaller than a film thickness of the thin film semiconductor layer when being deposited; and selectively ion-implanting second impurity ions into the thin film semiconductor layer with a dose quantity more than a dose quantity of the first impurity ions, in which a diode for detecting temperature is formed by a region into which the first impurity ions have been implanted and a region into which the second impurity ions have been implanted in the thin film semiconductor layer.

Manufacturing method of semiconductor device

Growing community of inventors

Tokyo, Japan

Hitoshi Abe