Matsushita Electric Works, Ltd.

Agency of Industrial Science and Technology

Japan Science and Technology Agency

Kyoto University

Panasonic Electric Works Co., Ltd.

Hitomichi Takano

Susumu Noda

Takeshi Yoshida

Yuji Suzuki

Yoshiki Hayasaki

Masahiko Suzumura

Takashi Kishida

Yoshifumi Shirai

Takashi Asano

Yasunori Miyamoto

Hiroshi Fukshima

Takaaki Yoshihara

Katsumi Yoshino

Yasufumi Masaki

Bong-Shik Song

Ken'ichiro Tanaka

Takashim 2108 Katsura Daini Goudousyukusya Asano

A highly sensitive and compactable target substance sensor for detection of the target substance using a photonic crystal and a method thereof. The sensor includes an electromagnetic wave source of supplying an electromagnetic wave, a photonic sensor element, and a detector. The photonic sensor element has photonic crystalline structure and is configured to include a sensor waveguide for introducing the electromagnetic wave, and a sensing resonator electromagnetically coupled to the sensor waveguide for resonating the electromagnetic wave at specific wavelength. The sensing resonator is exposed to an atmosphere including the target substance so as to vary a characteristic of the electromagnetic wave emitted from the sensing resonator. The detector is configured to receive the electromagnetic wave emitted from the sensing resonator to recognize an intensity variation of the electromagnetic wave and issue a signal indicative of a characteristic of the target substance.

Target substance sensor and method thereof using a photonic crystal

In this electromagnetic wave frequency filter, an electromagnetic wave of a predetermined frequency matching a resonant frequency of a resonatoris transmitted from an input waveguideto an output waveguidethrough the resonator, and is outputted from a drop port P. This filter has an input-waveguide-side reflectorand an output-waveguide-side reflector, which reflect the electromagnetic wave of the predetermined frequency. The electromagnetic wave frequency filter satisfies the following relation:/(1&#x2212;cos &#x3b8;)&#x3c;&#x3c;,/(1&#x2212;cos &#x3b8;)=/(1&#x2212;cos &#x3b8;),&#x3b8;, &#x3b8;&#x2260;2&#x3c0;(=0, 1, . . . ),where &#x3b8;is a phase shift amount of the electromagnetic wave reflected by the input-waveguide-side reflector, &#x3b8;is a phase shift amount of the electromagnetic wave reflected by the output-waveguide-side reflector, Qis a Q-factor between the resonatorand the input waveguide, Qis a Q-factor between the resonatorand the output waveguide, and Qis a Q-factor between the resonatorand free space.

Electromagnetic wave frequency filter

The present invention aims to provide an electromagnetic wave frequency filter capable of transmitting an electromagnetic wave having a predetermined frequency between two waveguides with a high level of efficiency. This object is achieved by the following construction: A resonatorthat resonates with the electromagnetic wave having the predetermined frequency is located between an input waveguideand an output waveguideand close to the two waveguides. The output waveguideis designed so that it extends parallel to the input waveguidewithin a predetermined sectionlocated in proximity to the resonator, and its distance from the input waveguidein the other section is larger than that in the predetermined section. This construction allows the electromagnetic wave having the predetermined frequency to be transmitted between the input waveguideand the output waveguidevia the resonator, while preventing the other electromagnetic waves having different frequencies from being transmitted between the input waveguideand the output waveguideoutside of the predetermined section. The present electromagnetic wave frequency filter can be preferably constructed using a two-dimensional photonic crystal.

A compact light-beam deflecting device with a photonic crystal is provided, which has the capability of deflecting a light beam incident on the photonic crystal by a controlled angle to output a transmitted light beam having a desired direction from the photonic crystal. This light-beam deflecting device comprises the photonic crystal designed to have a photonic band gap wavelength that is different from a wavelength of a light beam to be incident on the photonic crystal, and a deflection controller for applying an amount of energy to the photonic crystal to deflect the light beam incident on a side of the photonic crystal, and to provide a transmitted light beam, which forms the desired angle with respect to the light beam, from the other side of the photonic crystal.

Light-beam deflecting device with photonic crystal, optical switch using the same, and light-beam deflecting method

A solid state relay composed of a series connected pair of LDMOSFETs has a minimized output capacitance. Each LDMOSFET is configured to have a silicon layer of a first conductive type, a drain region of the first conductive type diffused in the top surface of the silicon layer, a well region of a second conductive type diffused in the silicon layer in a laterally spaced relation from the drain region, and a source region of the first conductive type diffused within the well region to define a channel extending between the source region and a confronting edge of the well region along the top surface of the silicon layer. Each LDMOSFET is of an SOI (Silicon-On-Insulator) structure composed of a silicon substrate placed on a supporting plate, a buried oxide layer on the silicon substrate, and the silicon layer on the buried oxide layer. The well region is diffused over the full depth of the silicon layer to have its bottom in contact with the buried oxide layer, so that the well region forms with the silicon layer a P-N interface only at a small area adjacent the channel. Because of this reduced P-N interface and also because of the buried oxide layer exhibiting a much lower inductive capacitance than the silicon layer, it is possible to greatly reduce a drain-source capacitance for minimizing the output capacitance of the relay in the non-conductive condition.

Solid-state relay

To provide a semiconductor device having a large allowable current, a demanded withstand voltage, and small output capacitance and resistance, the semiconductor device comprises a semiconductor layer formed on a semiconductor substrate, and the semiconductor layer includes a first conductivity type-drain region, a second conductivity type-well region apart from the drain region, a first conductivity type-source region in the well region apart from one end of the well region on the side of the drain region, a first conductivity type-drift region formed between one end of the well region and the drain region and in contact with the well region and the drain region, respectively, and a gate electrode formed spaced a gate oxide layer and on the well region located between the drift region and the source region; and the impurity concentration of the drift region decreases in the lateral direction and also in the vertical direction, respectively, as the distance from the drain region increases.

Semiconductor device and process for producing the same

A thin film transistor of SOI (Silicon-On-Insulator) type includes a buried oxide layer formed on a semiconductor substrate, a silicon layer of a first conductive type formed on the buried oxide layer, and an upper oxide layer formed on the silicon layer. The silicon layer has a body region of a second conductive type, source region of the first conductive type, drain region of the first conductive type, and a drift region of the first conductive type. The silicon layer is formed with a first portion of a thickness T1 in which the doping region is formed, and a second portion of a thickness T2 in which the body region is formed to reach the buried oxide layer. When the thicknesses T1 and T2 are determined so as to satisfy the relationships:

Thin film silicon-on-insulator transistor having an improved power

Growing community of inventors

Hirakata, Japan

Hitomichi Takano