Showa Denko K.k.

Toyoda Gosei Co., Ltd.

National Institute for Materials Science

Showa Denka K.k.

Hisayuki Miki

Yasunori Yokoyama

Kenzo Hanawa

Yasumasa Sasaki

Noritaka Muraki

Mineo Okuyama

Tetsuo Sakurai

Masato Kobayakawa

Takashi Udagawa

Hitoshi Takeda

Hironao Shinohara

Takehiko Okabe

Naoto Hirosaki

Hiromitsu Sakai

Kousuke Shioi

Hideki Tomozawa

Munetaka Watanabe

Hiroaki Kaji

Koji Kamei

Yoshiaki Ikenoue

Yoshiki Saito

Katsuki Kusunoki

Gaku Oriji

Hisao Sato

Tomoyuki Takei

Daisuke Shinoda

Hitoshi Yokouchi

Yasuhito Urashima

Joseph Gaze

Shinichi Matsui

Susumu Sugano

Akihiro Matsuse

Akira Bandoh

Syunji Horikawa

Kenji Yakushiji

Yasuhiro Takenaka

Ryoko Konta

Nobuo Eitoh

Yasushi Ohono

A light-emitting element includes an n-type semiconductor layer mainly including AlGaN (0.5&#x2264;x&#x2264;1), a p-type semiconductor layer, a light-emitting layer sandwiched between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode connected to the n-type semiconductor layer, and a plurality of p-electrodes that are connected to the p-type semiconductor layer and are arranged in a dot pattern. An area of the n-electrode is not less than 25% and not more than 50% of a chip area.

Light-emitting element

A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer () made of a group-III nitride compound on a substrate () by activating and reacting gas including a group-V element with a metal material in plasma; and sequentially forming an n-type semiconductor layer (), a light-emitting layer (), and a p-type semiconductor layer () each made of a group-III nitride compound semiconductor on the intermediate layer (). Nitrogen is used as the group-V element, and the thickness of the intermediate layer () is in the range of 20 to 80 nm.

Group-III nitride compound semiconductor light-emitting device, method of manufacturing group-III nitride compound semiconductor light-emitting device, and lamp

Provided are a method of manufacturing a group-III nitride semiconductor light-emitting device in which a light-emitting device excellent in the internal quantum efficiency and the light extraction efficiency can be obtained, a group-III nitride semiconductor light-emitting device and a lamp. Included are an epitaxial step of forming a semiconductor layer () so as to a main surface () of a substrate (), a masking step of forming a protective film on the semiconductor layer (), a semiconductor layer removal step of removing the protective film and the semiconductor layer () by laser irradiation to expose the substrate (), a grinding step of reducing the thickness of the substrate (), a polishing step of polishing the substrate (), a laser processing step of providing processing marks to the inside of the substrate (), a division step of creating a plurality of light-emitting devices () while forming a division surface of the substrate () to have a rough surface.

Method of manufacturing group-III nitride semiconductor light-emitting device, and group-III nitride semiconductor light-emitting device, and lamp

A sputtering apparatus () includes: a chamber () having an inside maintained in a depressurized state to generate plasma discharge (); a cathode () placed in the chamber () and holding a target (); and a substrate holder () holding a substrate () so that one surface of the substrate () faces the surface of the target (). The substrate () is arranged at an upper portion in the sputtering apparatus () with the surface of the substrate () facing downward. The target () is arranged at a lower portion in the sputtering apparatus () with the surface of the target () facing upward. The sputtering apparatus () includes a heater () for heating the substrate (). The temperature of the substrate () is raised by absorbing electromagnetic waves radiated from the heater (). A method of manufacturing a semiconductor light-emitting element using the sputtering apparatus is also disclosed.

Sputtering apparatus and manufacturing method of semiconductor light-emitting element

The present invention aims to enhance the light extraction efficiency of the Group III nitride semiconductor light-emitting device. The inventive Group III nitride semiconductor light-emitting device comprises a substrate; and a Group III nitride semiconductor layer including a light-emitting layer, stacked on the substrate, wherein the side face of the Group III nitride semiconductor layer is tilted with respect to the normal line of the major surface of the substrate.

Group III nitride semiconductor light-emitting device

The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer.

Solar cell and process for producing the same

A method for manufacturing a Group III nitride semiconductor of the present invention includes a sputtering step of forming a single-crystalline Group III nitride semiconductor on a substrate by a reactive sputtering method in a chamber in which a substrate and a Ga element-containing target are disposed, wherein said sputtering step includes respective substeps of: a first sputtering step of performing a film formation of the Group III nitride semiconductor while setting the temperature of the substrate to a temperature T; and a second sputtering step of continuing the film formation of the Group III nitride semiconductor while lowering the temperature of the substrate to a temperature Twhich is lower than the temperature T

Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

There are provided a group III nitride semiconductor light emitting device which is constituted of a substrate, an intermediate layer formed thereon having a favorable level of orientation properties, and a group III nitride semiconductor formed thereon having a favorable level of crystallinity, and having excellent levels of light emitting properties and productivity; a production method thereof; and a lamp,

Group III nitride semiconductor light emitting device and production method thereof, and lamp

One object of the present invention is to provide a method for producing a group III nitride semiconductor light-emitting device which has excellent productivity and produce a group III nitride semiconductor light-emitting device and a lamp, a method for producing a group III nitride semiconductor light-emitting device, in which a buffer layer () made of a group III nitride is laminated on a substrate (), an n-type semiconductor layer () comprising a base layer (), a light-emitting layer (), and a p-type semiconductor layer () are laminated on the buffer layer () in this order, comprising: a pretreatment step in which the substrate () is treated with plasma; a buffer layer formation step in which the buffer layer () having a composition represented by AlGaN (0&#x2266;x&#x3c;1) is formed on the pretreated substrate () by activating with plasma and reacting at least a metal gallium raw material and a gas containing a group V element; and a base layer formation step in which the base layer () is formed on the buffer layer ().

Method for producing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp

A Group III nitride compound semiconductor light emitting device is provided which has: an n-type semiconductor layer (); an active layer () of a multiple quantum well structure laminated on the n-type semiconductor layer (); a first p-type semiconductor layer () that is a layer of a superlattice structure in which an undoped film () that has a composition AlGaN (x indicating composition ratio, being within a range 0&#x3c;x&#x2266;0.4) and that contains no dopant, and a doped film () that has a composition AlGaN (y indicating composition ratio, being within a range 0&#x2266;y&#x3c;0.4) and that contains a dopant, are alternately laminated a plurality of times, and a surface thereof on the active layer side () is constituted by the undoped film (); and a second p-type semiconductor layer () laminated on the first p-type semiconductor layer ().

Group III nitride compound semiconductor light emitting device

A method for providing a phosphor, including a kneading step in which a raw material is kneaded to provide a raw material mixture; a sintering step in which the raw material mixture is sintered; and a heat treatment step in which the sintered raw material mixture is heat-treated, wherein the raw material includes at least one or more M-containing materials selected from MSi, MSiN, MSiN, MAlNand MSiN, wherein M is one or more divalent elements selected from M(0) and M(1).

Phosphor, method for producing the same and light-emitting device using the same

A Group III nitride semiconductor device of the present invention is obtained by laminating at least a buffer layer () made of a Group III nitride compound on a substrate (), wherein the buffer layer () is made of AlN, and a lattice constant of a-axis of the buffer layer () is smaller than a lattice constant of a-axis of AlN in a bulk state.

Group III nitride semiconductor device and method for manufacturing the same, group III nitride semiconductor light-emitting device and method for manufacturing the same, and lamp

A backing plate for use in a sputtering deposition apparatus being capable of stably holding Ga, and a sputtering deposition apparatus which is equipped with the backing plate are provided. Such a backing plate for use in a sputtering deposition apparatus is a backing plate for holding a target material which contains Ga, and at least a contact surface of which coming into contact with the target material is constituted from an easily wettable material having a contact angle to Ga in a liquid state of not more than 90&#xb0;.

Sputtering deposition apparatus and backing plate for use in sputtering deposition apparatus

An illumination device for a display device, which is formed from a substrate and a plurality of white light-emitting devices disposed on top of the substrate, and can be used as a backlight for a liquid crystal display panel, wherein the white light-emitting devices have a light source and a phosphor that is excited by the light source and emits light, and a fluorescent material with a composition represented by a general formula: M(0)M(1)M(2)M(3)ONis used as the phosphor.

Illumination device for display device, and display device

The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0)M(1)M(2)M(3)ON, wherein M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd and Lu; M(1) is one or more activators selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb; M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr; M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn; O is oxygen; N is nitrogen; and an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following: x, y and z satisfy 33&#x2266;x&#x2266;51, 8&#x2266;y&#x2266;12 and 36&#x2266;z&#x2266;56; a and b satisfy 3&#x2266;a+b&#x2266;7 and 0.001&#x2266;b&#x2266;1.2; m and n satisfy 0.8&#xb7;me&#x2266;m&#x2266;1.2&#xb7;me and 0&#x2266;n&#x2266;7 in which me=a+b; and v satisfies v={a&#xb7;v(0)+b&#xb7;v(1)}/(a+b) (wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion). The invention also relates to a method for producing the phosphor and a light-emitting device using the phosphor.

Growing community of inventors

Chiba, Japan

Hisayuki Miki