Denki Kagaku Kogyo Kabushiki Kaisha

Hisayuki Hashimoto

Tomohiro Nomiyama

Suzuya Yamada

Masayoshi Ichikawa

Go Takeda

&#x3b2;-SiAlON represented by a general formula SiAlONwith Eu dissolved therein, whose spin density corresponding to absorption g=2.00&#xb1;0.02 at 25&#xb0; C. obtained by the electron spin resonance method is equal to or lower than 6.0&#xd7;10spins/g. A method of manufacturing the &#x3b2;-SiAlON includes: a mixing step of mixing &#x3b2;-SiAlON materials; a baking step of baking the &#x3b2;-SiAlON having undergone the mixing step; a heating step of increasing the ambient temperature of the materials having undergone the mixing step from 1500&#xb0; C. to a baking temperature of the baking step at a rate equal to or lower than 2&#xb0; C./min.; an annealing step of annealing the &#x3b2;-SiAlON having undergone the baking step; and an acid treatment step of acid-treating the &#x3b2;-SiAlON having undergone the annealing step. The objective of the present invention is to provide &#x3b2;-SiAlON capable of achieving high luminescent efficiency, a method of manufacturing the &#x3b2;-SiAlON, and a light-emitting device using the &#x3b2;-SiAlON.

&#x3b2;-sialon and method of manufacturing thereof, and light-emitting device

Provided is a production method of a &#x3b2;-sialon phosphor that europium ions are solid-solved in &#x3b2;-sialon, including a mixing process for mixing raw materials of the &#x3b2;-sialon phosphor; a burning process for burning the raw materials after the mixing process to form the &#x3b2;-sialon phosphor; a HIP treatment process in which the &#x3b2;-sialon phosphor after the burning process is subjected to a HIP treatment; an annealing process in which the &#x3b2;-sialon phosphor after the HIP treatment process is subjected to an annealing treatment; and an acid treatment process in which the &#x3b2;-sialon phosphor after the annealing process is subjected to an acid treatment. According to the production method of a &#x3b2;-sialon phosphor, a &#x3b2;-sialon phosphor excellent in luminescence intensity is obtained.

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Machida, Japan

Hisayuki Hashimoto