Tdk Electronics Company, Limited

Hisayoshi Ueoka

Shinobu Fujiwara

Hitoshi Tanaka

Kiyoshi Furukawa

Nobuaki Kikuchi

Osamu Iizawa

Masatada Yodogawa

Yoshinari Yamashita

Susumu Miyabayashi

Kohji Hayashi

Takashi Yamamoto

A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 -Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3 -Pb(Mg.sub.1/2 W.sub.1/2)O.sub.3, can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics, and; have a low dielectric loss. A particular amount of the additives, i.e., Pb-(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mb.sub.1/2 W.sub.1/2)O.sub.3 Pb(Mn.sub.1/2 Nb.sub.2/3)O.sub.3, MnO, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Li.sub.2 O, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

High dielectric constant type ceramic composition consisting essentially

A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3 --Pb(ZrO.sub.3), can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics; have a low dependence of dielectric constant upon temperature, and; have a low dielectric loss. A particular amount of the additives, i.e., MnO, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.2/3 W.sub.1/3)O.sub.3, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

High dielectric constant type ceramic composition

A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.1/2 Nb.sub.1/2)O.sub.3 --Pb(Mg.sub.1/3 Nb.sub.2/3)O.sub.3, can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics, and; have a low dielectric loss. A particular amount of the additives, i.e., pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.1/3 Nb.sub.2/3)O.sub.3, MnO, Pb(Mn.sub.1/3 Ta.sub.2/3)O.sub.3 Li.sub.2 O, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

A novel ceramic composition exhibiting a solid solution structure of Pb(Fe.sub.1/2 Nb.sub.178 )O.sub.3 -Pb(Mg.sub.1/3 Ta.sub.2/3)O.sub.3, can be sintered at a low sintering temperature; have a high insulation resistance; have a relatively high dielectric constant in the high dielectric type ceramic dielectrics, and; have a low dielectric loss. A particular amount of the additives, i.e., Pb(Mn.sub.1/2 W.sub.1/2)O.sub.3, Pb(Mn.sub.1/3 Nb.sub.170 )O.sub.3, MnO, Pb(Mn.sub.1/3 Ta.sub.170 )O.sub.3, Li.sub.2 O, Cr.sub.2 O.sub.3 and CeO.sub.2, is added into the composition mentioned above.

A non-linear resistor comprises a sintered body of a ceramic composition which comprises 99.93 to 50 mole % of zinc oxide as ZnO; 0.01 to 10 mole % of a specific rare earth oxide as R.sub.2 O.sub.3 (R represents lanthanum, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium or lutetium) 0.01 to 10 mole % of an alkaline earth oxide as MO (M represents calcium, strontium or barium) and 0.05 to 30 mole % of cobalt oxide as CoO.

Non-linear resistor

A non-linear resistor comprises a sintered body of a ceramic composition which comprises 99.94 to 80.0 mole % of zinc oxide as ZnO, 0.02 to 10.0 mole % of the specific rare earth oxide selected from the group consisting of oxides of cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium as R.sub.2 O.sub.3, and 0.04 to 10 mole % of manganese oxide as MnO.

Semiconducting ceramics are produced by firing a semiconducting composition of the barium titanate type containing vanadium oxide in the amount of 0.001 to 0.5 wt%. A change in the specific resistance over the range of the temperature at which the positive temperature coefficient characteristic of resistivity (PTCR) is exhibited can be increased by as much as 10.sup.5 times and the specific resistance value at room temperature can be controlled at a desired value. By further adding silicon dioxide to the above composition in the amount of 0.05 to 1.5 wt% the above effects can be enhanced, especially the specific resistance at ambient temperature.

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Yachiyo, Japan

Hisayoshi Ueoka